丝印代码：NCE6045G；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6045G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 60V,ID =45A RDS(ON)

丝印代码：NCE6045G；LCE N-Channel Enhancement Mode Power MOSFET

文件：1.01818 Mbytes Page：6 Pages

丝印代码：NCE6045G；LCE N-Channel Enhancement Mode Power MOSFET

文件：1.028099 Mbytes Page：6 Pages

12-200V N-Channel Trench MOSFET

SWITCHMODE??Power Rectifier

SWITCHMODE™ Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected for Parallel Operation at Full Ratin

SWITCHMODE??Power Rectifier

The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating • 45 Volt Blocking Voltage

SWITCHMODE??Power Rectifier

The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating • 45 Volt Blocking Voltage

SWITCHMODE??Power Rectifier

SWITCHMODE™ Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected for Parallel Operation at Full Ratin

Industrial Silicon Rectifier, 60A

Features: • Low Leakage Current • Good Surge Capability up to 1000A • Availavle in Standard and Reverse Polarity