丝印代码：6007；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6007S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =7A RDS(ON)

12-200V N-Channel Trench MOSFET

\n The NCE6007S uses advanced trench technology and design to provide excellent R DS(ON)  with low gate charge. It can be used in a wide variety of applications. \n• V DS =60V,I D =7A\nR DS(ON) < 30m? @ V GS =10V （Typ：24m?）\nR DS(ON) < 35m? @ V GS =4.5V （Typ：27m?）\n• High density cell design for ultra low Rdson\n• Fully characterized avalanche voltage and current\n• Low gate to drain charge to reduce switching losses;

Buck Pulse-Width Modulator (PWM) Controller

The HIP6007 provides complete control and protection for a DC-DC converter optimized for high-performance microprocessor applications. It is designed to drive an N-Channel MOSFET in a standard buck topology. The HIP6007 integrates all of the control, output adjustment, monitoring and protection fu

1關A SOT23 Precision Shunt Voltage Reference

General Description The MAX6006–MAX6009 ultra-low-power shunt references are ideal for space-critical and low-power applications. They are offered in 3-pin SOT23 packages, and the minimum operating current is guaranteed to be Features ● Ultra-Low Operating Current: Guaranteed

1關A SOT23 Precision Shunt Voltage Reference

General Description The MAX6006–MAX6009 ultra-low-power shunt references are ideal for space-critical and low-power applications. They are offered in 3-pin SOT23 packages, and the minimum operating current is guaranteed to be Features ● Ultra-Low Operating Current: Guaranteed

DUAL DIFFERENTIAL LINE DRIVERS AND LOW-POWER RECEIVERS

文件：679.66 Kbytes Page：36 Pages

DUAL DIFFERENTIAL LINE DRIVERS AND LOW-POWER RECEIVERS

文件：679.66 Kbytes Page：36 Pages