丝印代码：NCE6080AI；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6080AI uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)=5.5mΩ (typical) @ VGS=10V RDS(ON)=6.5mΩ (typical) @ VGS=4.5V ● High density c

12-200V N-Channel Trench MOSFET

UV Power METERS

A Wide Lineup of 248 nm, 365 nm and 436 nm Type The C6080 series is a compact UV power meter specifically designed to measure the intensity of UV radiation emitted from the light guide output end of a UV spot light source. The C6080 uses a UV sensor that exhibits stable sensitivity even after

Schottky PowerMod

● Schottky barrier rectifier ● Guard ring for reverse protection ● VRRM - 80 to 100 Volts ● High surge capacity ● Reverse energy tested ● Electrically isolated baseplate ● ROHS Compliant

DOUBLE HETEROJUNCTION LOW CURRENT DISPLAYS

DESCRIPTION This line of solid state LED displays uses newly developed Double Heterojunction (HD) AIGaAs/GaAs material to emit deep red light at 650 nm. This material has outstanding efficiency at low drive currents and can be either DC or pulse driven. Viewability at up to 10 meters (MAN8000 Ser

Silicon Schottky Barrier Rectifier

Description: The NTE6080 is a silicon switchmode power rectifier using the Schottky Barrier principle with a platinum barrier metal. Features: ● Guard–Ring for Stress Protection ● Low Forward Voltage ● +150°C Operating Junction Temperature ● Guaranteed Reverse Avalanche ● Low Power Loss/Hig

DOUBLE HETEROJUNCTION AIGAAS RED LOW CURRENT DISPLAYS

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