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位置：首页 > IC中文资料第2549页 > IRG4BC20U

IRG4BC20U价格

参考价格：￥6.8034

型号：IRG4BC20UDPBF 品牌：INTERNATIONAL 备注：这里有IRG4BC20U多少钱，2025年最近7天走势，今日出价，今日竞价，IRG4BC20U批发/采购报价，IRG4BC20U行情走势销售排行榜，IRG4BC20U报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRG4BC20U

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A)

Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package Benefits • Gener

IRF

IRG4BC20U

Fit Rate / Equivalent Device Hours

文件：98.39 Kbytes Page：35 Pages

IRF

IRG4BC20U

封装/外壳：TO-220-3 包装：卷带（TR） 描述：IGBT 600V 13A 60W TO220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Infineon

英飞凌

IRG4BC20U

600V 超快 8-60 kHz 分立 IGBT，采用 TO-220AB 封装

Infineon

英飞凌

IRG4BC20UD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A)

Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFRED ultrafast, ultra-s

IRF

IRG4BC20UDPBF

UltraFast CoPack IGBT

Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFRED® ultrafast, ultra-soft-recovery anti-pa

IRF

IRG4BC20UDS

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A)

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Genera

IRF

IRG4BC20UD-S

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A)

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Genera

IRF

IRG4BC20UD-S

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-

IRF

IRG4BC20UD-SPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter para- meter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast,

IRF

IRG4BC20UDSRP

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-

IRF

IRG4BC20UDSTRRP

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-

IRF

IRG4BC20UPBF

UltraFast Speed IGBT

Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package • Lead-Free Benefits • Generati

IRF

IRG4BC20UD

Fit Rate / Equivalent Device Hours

文件：98.39 Kbytes Page：35 Pages

IRF

IRG4BC20UD

600V UltraFast 8-60 kHz Copack IGBT in a TO-220AB package

Infineon

英飞凌

IRG4BC20UDPBF

封装/外壳：TO-220-3 包装：管件 描述：IGBT 600V 13A 60W TO220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Infineon

英飞凌

IRG4BC20UDPBF

ULTRA FAST COPACK IGBT

文件：376.69 Kbytes Page：10 Pages

IRF

IRG4BC20UDPBF_15

ULTRA FAST COPACK IGBT

文件：376.69 Kbytes Page：10 Pages

IRF

IRG4BC20UD-S

600V UltraFast 8-60 kHz Copack IGBT in a D2-Pak package

Infineon

英飞凌

IRG4BC20UD-SPBF

ULTRA FAST COPACK IGBT

文件：365.7 Kbytes Page：11 Pages

IRF

IRG4BC20UD-SPBF_15

ULTRA FAST COPACK IGBT

文件：365.7 Kbytes Page：11 Pages

IRF

IRG4BC20UPBF

ULTRA FAST SPEED IGBT

文件：357.9 Kbytes Page：8 Pages

IRF

IRG4BC20UPBF_15

ULTRA FAST SPEED IGBT

文件：357.9 Kbytes Page：8 Pages

IRF

IRG4BC20F

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A)

Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package Benefits • Genera

IRF

IRG4BC20FD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A)

Features • Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery

IRF

IRG4BC20FDPBF

INSULATED GATEBIPOLAR TRANSISTOR WITH ULTRAFAST SOFR RECOVERY DIODE

IRF

IRG4BC20F

Fit Rate / Equivalent Device Hours

文件：98.39 Kbytes Page：35 Pages

IRF

IRG4BC20FD

Fit Rate / Equivalent Device Hours

文件：98.39 Kbytes Page：35 Pages

IRF

IRG4BC20U产品属性

  • 类型

    描述

  • 型号

    IRG4BC20U

  • 功能描述

    IGBT UFAST 600V 13A TO-220AB

  • RoHS

    否

  • 类别

    分离式半导体产品 >> IGBT - 单路

  • 系列

    -

  • 标准包装

    30

  • 系列

    GenX3™ IGBT

  • 类型

    PT 电压 -

  • 集电极发射极击穿（最大）

    1200V Vge,

  • Ic时的最大Vce（开）

    3V @ 15V，100A 电流 -

  • 集电极(Ic)（最大）

    200A 功率 -

  • 最大

    830W

  • 输入类型

    标准

  • 安装类型

    通孔

  • 封装/外壳

    TO-247-3

  • 供应商设备封装

    PLUS247?-3

  • 包装

    管件

IRG4BC20U供应商更多...

更新时间：2025-11-23 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市高捷芯城科技有限公司
IRG4BC20UDPBF
Infineon(英飞凌)
24+
TO-220
942
原厂订货渠道,支持BOM配单一站式服务
询价
深圳市得捷芯城科技有限公司
IRG4BC20U
IR
24+
NA/
155
优势代理渠道,原装正品,可全系列订货开增值税票
询价
深圳市明嘉莱科技有限公司
IRG4BC20U
IR
24+
TO 220
161545
明嘉莱只做原装正品现货
询价
深圳市华斯顿科技有限公司
IRG4BC20UD
IR
25+23+
TO-220
25646
绝对原装正品全新进口深圳现货
询价
深圳市勤思达科技有限公司
IRG4BC20U
IR
24+
N/A
8000
全新原装正品,现货销售
询价
天津市博通航睿技术有限公司
IRG4BC20U
Infineon Technologies
23+
原装
7000
询价
深圳市莱克讯科技有限公司
IRG4BC20UD
IR
1923+
TO-220
6896
原装进口现货库存专业工厂研究所配单供货
询价
深圳市赛尔通科技有限公司
IRG4BC20UDPBF
IR
23+
TO-220
65400
询价
深圳市威雅利发展有限公司
IRG4BC20U
IR
05+
TO-220
11000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市坤融电子科技有限公司
IRG4BC20UPBF
INFINEON/英飞凌
2025+
NA
5000
原装进口价格优 请找坤融电子!
询价

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IRG4BC20U规格书下载地址

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