INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features

• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant

mode

• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3

• IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations

• Industry standard D2Pak package

Benefits

• Generation 4 IGBTs offers highest efficiencies available

• Optimized for specific application conditions

• HEXFRED diodes optimized for performance with IGBTs . Minimized recovery characteristics require less/no snubbing

• Designed to be a drop-in replacement for equivalent industry-standard Generation 3 IR IGBTs