位置:IRG4BC20UDSRP > IRG4BC20UDSRP详情

IRG4BC20UDSRP中文资料

厂家型号

IRG4BC20UDSRP

文件大小

256.209Kbytes

页面数量

13

功能描述

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

数据手册

下载地址一下载地址二到原厂下载

生产厂商

IRF

IRG4BC20UDSRP数据手册规格书PDF详情

Features

• UltraFast: Optimized for high operating frequencies

8-40 kHz in hard switching, >200kHz in resonant

mode

• Generation 4 IGBT design provides tighter parameter

distribution and higher efficiency than

Generation 3

• IGBT co-packaged with HEXFREDTM ultrafast,

ultra-soft-recovery anti-parallel diodes for use in

bridge configurations

• Industry standard D2Pak package

Benefits

• Generation 4 IGBTs offers highest efficiencies

available

• Optimized for specific application conditions

• HEXFRED diodes optimized for performance with

IGBTs . Minimized recovery characteristics require

less/no snubbing

• Designed to be a drop-in replacement for

equivalent industry-standard Generation 3 IR IGBTs

更新时间:2025-10-6 14:04:00
供应商 型号 品牌 批号 封装 库存 备注 价格
IR
22+
6000
终端可免费供样,支持BOM配单
IR
23+
TO-263
8000
只做原装现货
IR
23+24
TO-263
59630
主营原装MOS,二三级管,肖特基,功率场效应管
IR
23+
TO-263
7000
Infineon Technologies
23+
D2PAK
9000
原装正品,支持实单
Infineon Technologies
21+
D2PAK
800
100%进口原装!长期供应!绝对优势价格(诚信经营)!
INFINEON
25+
TO-263
3000
就找我吧!--邀您体验愉快问购元件!
IR
23+
TO-263
50000
全新原装正品现货,支持订货
IR
21+
TO-263
10000
原装现货假一罚十
Infineon Technologies
24+
原装
5000
原装正品,提供BOM配单服务