IRG4BC20UD价格

参考价格:¥6.8034

型号:IRG4BC20UDPBF 品牌:INTERNATIONAL 备注:这里有IRG4BC20UD多少钱,2025年最近7天走势,今日出价,今日竞价,IRG4BC20UD批发/采购报价,IRG4BC20UD行情走势销售排行榜,IRG4BC20UD报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRG4BC20UD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A)

Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFRED ultrafast, ultra-s

IRF

IRG4BC20UD

Fit Rate / Equivalent Device Hours

文件:98.39 Kbytes Page:35 Pages

IRF

IRG4BC20UD

封装/外壳:TO-220-3 包装:卷带(TR) 描述:IGBT 600V 13A 60W TO220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Infineon

英飞凌

IRG4BC20UD

600V UltraFast 8-60 kHz Copack IGBT in a TO-220AB package

Infineon

英飞凌

UltraFast CoPack IGBT

Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFRED® ultrafast, ultra-soft-recovery anti-pa

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A)

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Genera

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A)

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Genera

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter para- meter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast,

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-

IRF

ULTRA FAST COPACK IGBT

文件:376.69 Kbytes Page:10 Pages

IRF

封装/外壳:TO-220-3 包装:管件 描述:IGBT 600V 13A 60W TO220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Infineon

英飞凌

ULTRA FAST COPACK IGBT

文件:376.69 Kbytes Page:10 Pages

IRF

600V UltraFast 8-60 kHz Copack IGBT in a D2-Pak package

Infineon

英飞凌

ULTRA FAST COPACK IGBT

文件:365.7 Kbytes Page:11 Pages

IRF

ULTRA FAST COPACK IGBT

文件:365.7 Kbytes Page:11 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A)

Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package Benefits • Genera

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A)

Features • Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery

IRF

INSULATED GATEBIPOLAR TRANSISTOR WITH ULTRAFAST SOFR RECOVERY DIODE

IRF

Fit Rate / Equivalent Device Hours

文件:98.39 Kbytes Page:35 Pages

IRF

Fit Rate / Equivalent Device Hours

文件:98.39 Kbytes Page:35 Pages

IRF

IRG4BC20UD产品属性

  • 类型

    描述

  • 型号

    IRG4BC20UD

  • 功能描述

    IGBT W/DIODE 600V 13A TO-220AB

  • RoHS

  • 类别

    分离式半导体产品 >> IGBT - 单路

  • 系列

    -

  • 标准包装

    30

  • 系列

    GenX3™ IGBT

  • 类型

    PT 电压 -

  • 集电极发射极击穿(最大)

    1200V Vge,

  • Ic时的最大Vce(开)

    3V @ 15V,100A 电流 -

  • 集电极(Ic)(最大)

    200A 功率 -

  • 最大

    830W

  • 输入类型

    标准

  • 安装类型

    通孔

  • 封装/外壳

    TO-247-3

  • 供应商设备封装

    PLUS247?-3

  • 包装

    管件

更新时间:2025-11-23 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Infineon(英飞凌)
24+
TO-220
942
原厂订货渠道,支持BOM配单一站式服务
IR
24+
NA/
485
优势代理渠道,原装正品,可全系列订货开增值税票
IR
24+
TO-220
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
IR
25+23+
TO-220
25646
绝对原装正品全新进口深圳现货
INFINEON/英飞凌
25+
TO220-3
13
全新原装正品支持含税
Infineon Technologies
23+
原装
7000
IR(国际整流器)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞
IR
1923+
TO-220
6896
原装进口现货库存专业工厂研究所配单供货
IR
23+
TO-220
65400
ir
24+
N/A
6980
原装现货,可开13%税票

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