IRG4BC20FD价格

参考价格:¥7.4934

型号:IRG4BC20FDPBF 品牌:International 备注:这里有IRG4BC20FD多少钱,2026年最近7天走势,今日出价,今日竞价,IRG4BC20FD批发/采购报价,IRG4BC20FD行情走势销售排行榜,IRG4BC20FD报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRG4BC20FD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A)

Features • Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery

IRF

IRG4BC20FD

Fit Rate / Equivalent Device Hours

文件:98.39 Kbytes Page:35 Pages

IRF

IRG4BC20FD

封装/外壳:TO-220-3 包装:管件 描述:IGBT 600V 16A 60W TO220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Infineon

英飞凌

IRG4BC20FD

600V 快速 1-8 kHz Copack IGBT,采用 TO-220AB 封装

Infineon

英飞凌

INSULATED GATEBIPOLAR TRANSISTOR WITH ULTRAFAST SOFR RECOVERY DIODE

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A)

Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-pa

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT

Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-pa

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A)

Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-pa

IRF

OPTIMIZED FOR MEDIUM OPERATING

文件:319.01 Kbytes Page:11 Pages

IRF

OPTIMIZED FOR MEDIUM OPERATING

文件:319.01 Kbytes Page:11 Pages

IRF

封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 包装:管件 描述:IGBT 600V 16A 60W D2PAK 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Infineon

英飞凌

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT

Infineon

英飞凌

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A)

Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package Benefits • Genera

IRF

Fit Rate / Equivalent Device Hours

文件:98.39 Kbytes Page:35 Pages

IRF

IRG4BC20FD产品属性

  • 类型

    描述

  • 型号

    IRG4BC20FD

  • 功能描述

    IGBT FAST 600V 16A TO-220AB

  • RoHS

  • 类别

    分离式半导体产品 >> IGBT - 单路

  • 系列

    -

  • 标准包装

    30

  • 系列

    GenX3™ IGBT

  • 类型

    PT 电压 -

  • 集电极发射极击穿(最大)

    1200V Vge,

  • Ic时的最大Vce(开)

    3V @ 15V,100A 电流 -

  • 集电极(Ic)(最大)

    200A 功率 -

  • 最大

    830W

  • 输入类型

    标准

  • 安装类型

    通孔

  • 封装/外壳

    TO-247-3

  • 供应商设备封装

    PLUS247?-3

  • 包装

    管件

更新时间:2026-1-5 10:18:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON/英飞凌
23+/24+
TO-220
9865
原装正品,专业分销IGBT管
INFINEON/英飞凌
2407+
30098
全新原装!仓库现货,大胆开价!
IR
21+
TO-263
10000
原装现货假一罚十
IR
22+
SOT263
8000
原装正品支持实单
IR
NEW
TO-220
35890
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
IR
24+
TO-263
4500
只做原装正品现货 欢迎来电查询15919825718
IR
24+
TO-220AB
27500
原装正品,价格最低!
24+
N/A
47000
一级代理-主营优势-实惠价格-不悔选择
Infineon
24+
NA
3308
进口原装正品优势供应
INFINEON/英飞凌
2022+
50
6600
只做原装,假一罚十,长期供货。

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