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IRG4BC20UD-S价格
参考价格：￥8.8773
型号：IRG4BC20UD-SPBF 品牌：IR 备注：这里有IRG4BC20UD-S多少钱，2025年最近7天走势，今日出价，今日竞价，IRG4BC20UD-S批发/采购报价，IRG4BC20UD-S行情走势销售排行榜，IRG4BC20UD-S报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRG4BC20UD-S | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A) INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Genera | IRF |   | |
IRG4BC20UD-S | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra- | IRF | | |
IRG4BC20UD-S | 600V UltraFast 8-60 kHz Copack IGBT in a D2-Pak package | Infineon 英飞凌 | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter para- meter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, | IRF | | ||
ULTRA FAST COPACK IGBT 文件：365.7 Kbytes Page：11 Pages | IRF | | ||
ULTRA FAST COPACK IGBT 文件：365.7 Kbytes Page：11 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A) Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package Benefits • Genera | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A) Features • Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery | IRF | | ||
INSULATED GATEBIPOLAR TRANSISTOR WITH ULTRAFAST SOFR RECOVERY DIODE
| IRF | | ||
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRF | | ||
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRF | |
IRG4BC20UD-S产品属性
- 类型
描述
- 型号
IRG4BC20UD-S
- 功能描述
IGBT W/DIODE 600V 13A D2PAK
- RoHS
否
- 类别
分离式半导体产品 >> IGBT - 单路
- 系列
-
- 标准包装
30
- 系列
GenX3™ IGBT
- 类型
PT 电压 -
- 集电极发射极击穿（最大）
1200V Vge,
- Ic时的最大Vce（开）
3V @ 15V，100A 电流 -
- 集电极(Ic)（最大）
200A 功率 -
- 最大
830W
- 输入类型
标准
- 安装类型
通孔
- 封装/外壳
TO-247-3
- 供应商设备封装
PLUS247?-3
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
3356 |
原装现货,当天可交货,原型号开票 |
|||
IR |
24+ |
TO-263 |
490 |
||||
Infineon Technologies |
23+ |
D2PAK |
9000 |
原装正品，支持实单 |
|||
IR |
2023+ |
D2-PAK |
50000 |
原装现货 |
|||
IR |
23+ |
D2-PAK |
7300 |
专注配单,只做原装进口现货 |
|||
Infineon Technologies |
23+ |
原装 |
7000 |
||||
IR(国际整流器) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
IR |
2447 |
TO-263 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
Infineon |
24+ |
NA |
3020 |
进口原装正品优势供应 |
|||
IR |
22+ |
TO-263 |
6000 |
终端可免费供样,支持BOM配单 |
IRG4BC20UD-S芯片相关品牌
IRG4BC20UD-S规格书下载地址
IRG4BC20UD-S参数引脚图相关
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- IRG4BC30S-STRLP
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- IRG4BC30KPBF
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- IRG4BC20UPBF
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- IRG4BC20UDPBF
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- IRG4BC20KDSTRLP
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- IRG4BC15UD-SPBF
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- IRFZ48ZSPBF
- IRFZ48Z
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- IRFZ48VPBF
- IRFZ48V
- IRFZ48SPBF
- IRFZ48S
- IRFZ48R
- IRFZ48N
- IRFZ48L
- IRFZ48
- IRFZ46Z
- IRFZ46S
- IRFZ46N
- IRFZ46L
- IRFZ46
- IRFZ45
- IRFZ44Z
- IRFZ44V
- IRFZ44S
- IRFZ44R
- IRFZ44N
- IRFZ44L
- IRFZ44E
IRG4BC20UD-S数据表相关新闻
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属性 参数值 商品目录 IGBT管 集电极电流（Ic）（最大值） 55A 集射极击穿电压（最大值） 600V 类型 - 不同 Vge，Ic 时的 Vce（on） 2.3V @ 15V，27A 栅极阈值电压-VGE(th) 6V @ 250uA
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DdatasheetPDF页码索引
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