Features

• UltraFast: Optimized for high operating frequencies

8-40 kHz in hard switching, >200kHz in resonant

mode

• Generation 4 IGBT design provides tighter para-

meter distribution and higher efficiency than

Generation 3

• IGBT co-packaged with HEXFREDTM ultrafast,

ultra-soft-recovery anti-parallel diodes for use in

bridge configurations

• Industry standard D2Pak package

• Lead-Free

Benefits

• Generation 4 IGBTs offers highest efficiencies

available

• Optimized for specific application conditions

• HEXFRED diodes optimized for performance with

IGBTs . Minimized recovery characteristics require

less/no snubbing

• Designed to be a drop-in replacement for

equivalent industry-standard Generation 3 IR IGBTs