Features

• UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode

• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3

• IGBT co-packaged with HEXFRED® ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations

• Industry standard TO-220AB package

• Lead-Free

Benefits

• Generation -4 IGBTs offer highest efficiencies available

• IGBTs optimized for specific application conditions

• HEXFRED diodes optimized for performance with IGBTs. Minimized recovery characteristics require less/no snubbing

• Designed to be a drop-in replacement for equivalent industry-standard Generation 3 IR IGBTs