IRG4BC20UPBF价格

参考价格:¥4.9468

型号:IRG4BC20UPBF 品牌:INTERNATIONAL 备注:这里有IRG4BC20UPBF多少钱,2025年最近7天走势,今日出价,今日竞价,IRG4BC20UPBF批发/采购报价,IRG4BC20UPBF行情走势销售排行榜,IRG4BC20UPBF报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRG4BC20UPBF

UltraFast Speed IGBT

Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package • Lead-Free Benefits • Generati

IRF

IRG4BC20UPBF

ULTRA FAST SPEED IGBT

文件:357.9 Kbytes Page:8 Pages

IRF

IRG4BC20UPBF

封装/外壳:TO-220-3 包装:管件 描述:IGBT 600V 13A 60W TO220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Infineon

英飞凌

ULTRA FAST SPEED IGBT

文件:357.9 Kbytes Page:8 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A)

Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package Benefits • Genera

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A)

Features • Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery

IRF

INSULATED GATEBIPOLAR TRANSISTOR WITH ULTRAFAST SOFR RECOVERY DIODE

IRF

Fit Rate / Equivalent Device Hours

文件:98.39 Kbytes Page:35 Pages

IRF

Fit Rate / Equivalent Device Hours

文件:98.39 Kbytes Page:35 Pages

IRF

IRG4BC20UPBF产品属性

  • 类型

    描述

  • 型号

    IRG4BC20UPBF

  • 功能描述

    IGBT 晶体管 600V UltraFast 8-60kHz

  • RoHS

  • 制造商

    Fairchild Semiconductor

  • 配置

    集电极—发射极最大电压

  • VCEO

    650 V

  • 集电极—射极饱和电压

    2.3 V

  • 栅极/发射极最大电压

    20 V 在25

  • C的连续集电极电流

    150 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    187 W

  • 封装/箱体

    TO-247

  • 封装

    Tube

更新时间:2025-10-4 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
NA/
13888
优势代理渠道,原装正品,可全系列订货开增值税票
Infineo
24+
N/A
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
IR
25+23+
TO263
40449
绝对原装正品全新进口深圳现货
Infineon
24+
NEW IN ORIGINAL
8500
原厂原包原装公司现货,假一赔十,低价出售
IR
24+
TO-220-3
334
Infineon
原厂封装
9800
原装进口公司现货假一赔百
Infineon Technologies
23+
TO220AB
9000
原装正品,支持实单
Infineon Technologies
23+
原装
8000
只做原装现货
Infineon Technologies
23+
原装
7000
Infineon
24+
NA
3107
进口原装正品优势供应

IRG4BC20UPBF数据表相关新闻