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IRG4BC20F价格
参考价格：￥7.4934
型号：IRG4BC20FDPBF 品牌：International 备注：这里有IRG4BC20F多少钱，2025年最近7天走势，今日出价，今日竞价，IRG4BC20F批发/采购报价，IRG4BC20F行情走势销售排行榜，IRG4BC20F报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRG4BC20F | INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A) Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package Benefits • Genera | IRF |   | |
IRG4BC20F | Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRF | | |
IRG4BC20F | 封装/外壳：TO-220-3 包装：管件 描述：IGBT 600V 16A 60W TO220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | Infineon 英飞凌 | | |
IRG4BC20F | 600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package | Infineon 英飞凌 | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A) Features • Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery | IRF | | ||
INSULATED GATEBIPOLAR TRANSISTOR WITH ULTRAFAST SOFR RECOVERY DIODE
| IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A) Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-pa | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-pa | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A) Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-pa | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package • Lead-Free Benef | IRF | | ||
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRF | | ||
600V 快速 1-8 kHz Copack IGBT，采用 TO-220AB 封装 | Infineon 英飞凌 | | ||
OPTIMIZED FOR MEDIUM OPERATING 文件：319.01 Kbytes Page：11 Pages | IRF | | ||
封装/外壳：TO-220-3 包装：管件 描述：IGBT 600V 16A 60W TO220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | Infineon 英飞凌 | | ||
OPTIMIZED FOR MEDIUM OPERATING 文件：319.01 Kbytes Page：11 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT | Infineon 英飞凌 | | ||
INSULATED GATE BIPOLAR TRANSISTOR 文件：204.95 Kbytes Page：9 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR 文件：204.95 Kbytes Page：9 Pages | IRF | |
IRG4BC20F产品属性
- 类型
描述
- 型号
IRG4BC20F
- 功能描述
IGBT FAST 600V 16A TO-220AB
- RoHS
否
- 类别
分离式半导体产品 >> IGBT - 单路
- 系列
-
- 标准包装
30
- 系列
GenX3™ IGBT
- 类型
PT 电压 -
- 集电极发射极击穿（最大）
1200V Vge,
- Ic时的最大Vce（开）
3V @ 15V，100A 电流 -
- 集电极(Ic)（最大）
200A 功率 -
- 最大
830W
- 输入类型
标准
- 安装类型
通孔
- 封装/外壳
TO-247-3
- 供应商设备封装
PLUS247?-3
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
495 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
IR |
24+ |
TO-220 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
INFINEON/英飞凌 |
24+ |
TO-220 |
159942 |
明嘉莱只做原装正品现货 |
|||
IR |
05+ |
TO-220 |
495 |
||||
INFINEON/英飞凌 |
24+ |
TO-220 |
1479 |
只做原厂渠道 可追溯货源 |
|||
IR |
24+ |
TO-220 |
5000 |
||||
IR |
17+ |
TO-220 |
6200 |
100%原装正品现货 |
|||
IR |
18+ |
TO-220 |
85600 |
保证进口原装可开17%增值税发票 |
|||
Infineon Technologies |
23+ |
TO220AB |
9000 |
原装正品，支持实单 |
|||
IR |
23+ |
TO-220 |
8000 |
只做原装现货 |
IRG4BC20F芯片相关品牌
IRG4BC20F规格书下载地址
IRG4BC20F参数引脚图相关
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- jumper
- jtag接口
- jk触发器
- j111
- j108
- isd1420
- IRH7130
- IRH7054
- IRH60
- IRH4230
- IRH4150
- IRH4054
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- IRG4BC30FDPBF
- IRG4BC30FD1PBF
- IRG4BC20UPBF
- IRG4BC20UDSTRRP
- IRG4BC20UD-SPBF
- IRG4BC20UDPBF
- IRG4BC20SPBF
- IRG4BC20SD-SPBF
- IRG4BC20SDPBF
- IRG4BC20MDPBF
- IRG4BC20KDSTRLP
- IRG4BC20KD-SPBF
- IRG4BC20KDPBF
- IRG4BC20FPBF
- IRG4BC20FDPBF
- IRG4BC15UD-SPBF
- IRG4BC15UDPBF
- IRG4BC15UD-LPBF
- IRG4BC10UDPBF
- IRG4BC10KPBF
- IRG4BC10KDPBF
- IRFZ48ZSPBF
- IRFZ48Z
- IRFZ48VSPBF
- IRFZ48VPBF
- IRFZ48V
- IRFZ48SPBF
- IRFZ48S
- IRFZ48RSPBF
- IRFZ48RPBF
- IRFZ48R
- IRFZ48PBF
- IRFZ48NSTRLPBF
- IRFZ48NSPBF
- IRFZ48NPBF
- IRFZ48N
- IRFZ48L
- IRFZ48
- IRFZ46ZSTRLPBF
- IRFZ46ZSPBF
- IRFZ46ZPBF
- IRFZ46ZLPBF
- IRFZ46Z
- IRFZ46S
- IRFZ46N
- IRFZ46L
- IRFZ46
- IRFZ45
- IRFZ44Z
- IRFZ44V
- IRFZ44S
- IRFZ44R
- IRFZ44N
- IRFZ44L
- IRFZ44E
IRG4BC20F数据表相关新闻
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属性 参数值 商品目录 IGBT管 集电极电流（Ic）（最大值） 55A 集射极击穿电压（最大值） 600V 类型 - 不同 Vge，Ic 时的 Vce（on） 2.3V @ 15V，27A 栅极阈值电压-VGE(th) 6V @ 250uA
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原装正品现货热卖中，焕盛达-专注原装 用芯服务；
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元器件优质供应
2019-11-1
DdatasheetPDF页码索引
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