Power MOSFET(Vdss=100V, Rds(on)=23mohm, Id=57A)

VDSS = 100V RDS(on) = 23mΩ ID = 57A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig

Power MOSFET(Vdss=100V, Rds(on)=0.025ohm, Id=57A)

VDSS = 100V RDS(on) = 23mΩ ID = 57A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig

HEXFET짰 Power MOSFET ( VDSS = 100V , RDS(on) = 23m廓 , ID = 57A )

VDSS = 100V RDS(on) = 23mΩ ID = 57A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig

HEXFET Power MOSFET

VDSS = 100V RDS(on) = 23mΩ ID = 57A Description Advanced HEXFETÆ Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig

Power MOSFET(Vdss=100V, Rds(on)=0.025ohm, Id=57A)

VDSS = 100V RDS(on) = 23mΩ ID = 57A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig

HEXFET짰 Power MOSFET ( VDSS = 100V , RDS(on) = 23m廓 , ID = 57A )

VDSS = 100V RDS(on) = 23mΩ ID = 57A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig

Advanced Process Technology

VDSS = 100V RDS(on) = 23mΩ ID = 57A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig

HEXFET짰 Power MOSFET

VDSS = 100V RDS(on) = 23mΩ ID = 57A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and imp

N-Channel Enhancement Mode MOSFET

Description The IRF3710Z uses advanced trench technology and design to provide excellent RDS(ON) with low gat e charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =60A RDS(ON)

Advanced Process Technology

VDSS = 100V RDS(on) = 18mΩ ID = 59A Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and imp

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications,this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impr

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications,this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impr

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and imp

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications,this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impr

Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A??

SMPS MOSFET Benefits ● Ultra-Low Gate Impedance ● Very Low RDS(on) at 4.5V VGS ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use ● High Frequency Buck Conv

N-Channel MOSFET Transistor

DESCRITION • reliable device for use in a wide variety of applications FEATURES • Static drain-source on-resistance: RDS(on) ≤6.0mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A??

SMPS MOSFET Benefits ● Ultra-Low Gate Impedance ● Very Low RDS(on) at 4.5V VGS ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use ● High Frequency Buck Conv

HEXFET Power MOSFET

SMPS MOSFET Benefits ● Ultra-Low Gate Impedance ● Very Low RDS(on) at 4.5V VGS ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use ● High Frequency Buck Converte

High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use

SMPS MOSFET Benefits ● Ultra-Low Gate Impedance ● Very Low RDS(on) at 4.5V VGS ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use ● High Frequency Buck Converte

High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use

SMPS MOSFET Benefits ● Ultra-Low Gate Impedance ● Very Low RDS(on) at 4.5V VGS ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use ● High Frequency Buck Converte

HEXFET Power MOSFET

SMPS MOSFET Benefits ● Ultra-Low Gate Impedance ● Very Low RDS(on) at 4.5V VGS ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use ● High Frequency Buck Converte

Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A??

SMPS MOSFET Benefits ● Ultra-Low Gate Impedance ● Very Low RDS(on) at 4.5V VGS ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use ● High Frequency Buck Conv

POWER MANAGEMENT CHIPSET FOR 3-PHASE VRM 9.0 CONVERTERS

DESCRIPTION The IRUK3055CQ01 is a complete power management chipset solution that meets Intel’s VRM 9.0 specifications for CPU power. The chipset consists of the IRU3055CQ 3-phase PWM IC and matching control (IRF3704S) and synchronous MOSFETs (IRF3711S). FEATURES Complete VRM 9.0 chipse

HEXFET Power MOSFET

SMPS MOSFET Benefits ● Ultra-Low Gate Impedance ● Very Low RDS(on) at 4.5V VGS ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use ● High Frequency Buck Converte

High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use

SMPS MOSFET Benefits ● Ultra-Low Gate Impedance ● Very Low RDS(on) at 4.5V VGS ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use ● High Frequency Buck Converte

High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use

SMPS MOSFET Benefits ● Ultra-Low Gate Impedance ● Very Low RDS(on) at 4.5V VGS ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use ● High Frequency Buck Converte

HEXFET Power MOSFET

Applications • High Frequency Synchronous Buck Converters for Computer Processor Power Benefits • Low RDS(on) at 4.5V VGS • Ultra-Low Gate Impedance • Fully Characterized Avalanche Voltage and Current

HEXFET Power MOSFET

Benefits ● Low RDS(on) at 4.5V VGS ● Ultra-Low Gate Impedance ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency Synchronous Buck Converters for Computer Processor Power

High Frequency Synchronous Buck Converters for Computer Processor Power

Benefits ● Low RDS(on) at 4.5V VGS ● Ultra-Low Gate Impedance ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency Synchronous Buck Converters for Computer Processor Power

HEXFET Power MOSFET

Benefits ● Low RDS(on) at 4.5V VGS ● Ultra-Low Gate Impedance ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency Synchronous Buck Converters for Computer Processor Power ● Lead-Free

HEXFET Power MOSFET

Benefits ● Low RDS(on) at 4.5V VGS ● Ultra-Low Gate Impedance ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency Synchronous Buck Converters for Computer Processor Power

High Frequency Synchronous Buck Converters for Computer Processor Power

Benefits ● Low RDS(on) at 4.5V VGS ● Ultra-Low Gate Impedance ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency Synchronous Buck Converters for Computer Processor Power

HEXFET Power MOSFET

Benefits ● Low RDS(on) at 4.5V VGS ● Ultra-Low Gate Impedance ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency Synchronous Buck Converters for Computer Processor Power ● Lead-Free

High Frequency Synchronous Buck Converters for Computer Processor Power

Benefits ● Low RDS(on) at 4.5V VGS ● Ultra-Low Gate Impedance ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency Synchronous Buck Converters for Computer Processor Power

HEXFET Power MOSFET

Applications • High Frequency Synchronous Buck Converters for Computer Processor Power Benefits • Low RDS(on) at 4.5V VGS • Ultra-Low Gate Impedance • Fully Characterized Avalanche Voltage and Current

HEXFET Power MOSFET

Applications • High Frequency Synchronous Buck Converters for Computer Processor Power • Lead-Free Benefits • Low RDS(on) at 4.5V VGS • Ultra-Low Gate Impedance • Fully Characterized Avalanche Voltage and Current

HEXFET Power MOSFET

Applications • High Frequency Synchronous Buck Converters for Computer Processor Power • Lead-Free Benefits • Low RDS(on) at 4.5V VGS • Ultra-Low Gate Impedance • Fully Characterized Avalanche Voltage and Current

HEXFET Power MOSFET

Applications • High Frequency Synchronous Buck Converters for Computer Processor Power Benefits • Low RDS(on) at 4.5V VGS • Ultra-Low Gate Impedance • Fully Characterized Avalanche Voltage and Current

HEXFET Power MOSFET

Applications • High Frequency Synchronous Buck Converters for Computer Processor Power • Lead-Free Benefits • Low RDS(on) at 4.5V VGS • Ultra-Low Gate Impedance • Fully Characterized Avalanche Voltage and Current

HEXFETPower MOSFET

Benefits • Ultra-Low Gate Impedance • Very Low RDS(on) • Fully Characterized Avalanche Voltage and Current Applications • Synchronous MOSFET for Notebook Processor Power • Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems

HEXFET Power MOSFET

Benefits • Ultra-Low Gate Impedance • Very Low RDS(on) • Fully Characterized Avalanche Voltage and Current Applications • Synchronous MOSFET for Notebook Processor Power • Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems • Lead-Free

Synchronous MOSFET for Notebook Processor Power

Benefits • Ultra-Low Gate Impedance • Very Low RDS(on) • Fully Characterized Avalanche Voltage and Current Applications • Synchronous MOSFET for Notebook Processor Power • Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems • Lead-Free

Industry-standard pinout SO-8 Package

Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification Benefits Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliab

Synchronous MOSFET for Notebook Processor Power

Benefits • Ultra-Low Gate Impedance • Very Low RDS(on) • Fully Characterized Avalanche Voltage and Current Applications • Synchronous MOSFET for Notebook Processor Power • Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems • Lead-Free

Industry-standard pinout SO-8 Package

Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification Benefits Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliab

Advanced Process Technology

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中低压MOS≤200V

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