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IRF3710LPBF中文资料
IRF3710LPBF数据手册规格书PDF详情
VDSS = 100V
RDS(on) = 23mΩ
ID = 57A
Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
IRF3710LPBF产品属性
- 类型
描述
- 型号
IRF3710LPBF
- 功能描述
MOSFET MOSFT 100V 57A 23mOhm 86.7nC
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
24+ |
210494 |
只做原厂渠道 可追溯货源 |
||||
Infineon(英飞凌) |
24+ |
TO-262 |
7828 |
支持大陆交货,美金交易。原装现货库存。 |
|||
IR |
24+ |
TO-262-3 |
3410 |
||||
Infineon |
24+ |
NA |
3348 |
进口原装正品优势供应 |
|||
IR |
23+ |
TO-262-3 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
IR |
16+ |
TO262 |
26590 |
进口原装现货 |
|||
International Rectifier |
2022+ |
1 |
全新原装 货期两周 |
||||
Infineon(英飞凌) |
2447 |
TO262 |
115000 |
1000个/管一级代理专营品牌!原装正品,优势现货,长 |
|||
INFINEON |
25+ |
TO-262 |
3675 |
就找我吧!--邀您体验愉快问购元件! |
|||
IR |
21+ |
TO262 |
6450 |
只做原装,绝对现货,原厂代理商渠道,欢迎电话微信查 |
IRF3710LPBF 价格
参考价格：￥6.3669
IRF3710LPBF 资料下载更多...
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