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IRF3710S中文资料
IRF3710S数据手册规格书PDF详情
VDSS = 100V
RDS(on) = 23mΩ
ID = 57A
Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
IRF3710S产品属性
- 类型
描述
- 型号
IRF3710S
- 制造商
International Rectifier
- 功能描述
Trans MOSFET N-CH 100V 57A 3-Pin(2+Tab) D2PAK
- 制造商
International Rectifier
- 功能描述
MOSFET N D2-PAK
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IRF |
4480 |
原装正品 |
|||||
IRF3710S |
689 |
689 |
|||||
IR |
24+ |
SOT-263 |
2000 |
原装正品,欢迎咨询 |
|||
IR |
25+ |
D2-PAK |
9600 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
Infineon |
19+ |
TO-263 |
30000 |
||||
IR |
24+ |
TO263 |
86 |
全新原装,一手货源,全场热卖! |
|||
INFINEON/英飞凌 |
25+ |
D2-PAK |
32360 |
INFINEON/英飞凌全新特价IRF3710STRLPBF即刻询购立享优惠#长期有货 |
|||
IR |
24+ |
TO-220 |
15000 |
全新原装的现货 |
|||
IR |
16+ |
TO-263 |
36000 |
原装正品,优势库存81 |
|||
IR |
23+ |
TO-263 |
65400 |
IRF3710STRRPBF 价格
参考价格:¥3.7017
IRF3710S 资料下载更多...
IRF3710S相关电子新闻
IRF3710STRLPBF 原装正品
INFINEON/英飞凌 现货100K
2022-7-6
IRF3710S 芯片相关型号
Datasheet数据表PDF页码索引
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