AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and imp

Isc N-Channel MOSFET Transistor

文件：301.06 Kbytes Page：2 Pages

Advanced Process Technology Ultra Low On-Resistance

文件：4.63191 Mbytes Page：12 Pages

100V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-262 封装

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications,this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impr

N-Channel 100-V (D-S) MOSFET

Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed

General Purpose Packaging Tape

文件：14.65 Kbytes Page：2 Pages

Nytye®Mounting Platforms

文件：241.29 Kbytes Page：1 Pages

Secondary Side Synchronous Post Regulator

文件：226.91 Kbytes Page：12 Pages

59A100V N-CHANNEL POWER MOSFET TRANSISTOR

文件：278.19 Kbytes Page：7 Pages