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IRF3710PBF中文资料
IRF3710PBF数据手册规格书PDF详情
VDSS = 100V
RDS(on) = 23mΩ
ID = 57A
Description
Advanced HEXFETÆ Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
IRF3710PBF产品属性
- 类型
描述
- 型号
IRF3710PBF
- 功能描述
MOSFET MOSFT 100V 57A 23mOhm 86.7nC
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-220 |
6050 |
原装现货,可开13%税票 |
|||
IR |
24+ |
TO-220 |
26371 |
保证进口原装现货假一赔十 |
|||
IR |
25+ |
TO-220 |
9600 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
IR |
2020+ |
TO-220 |
22000 |
全新原装正品 现货库存 价格优势 |
|||
INFINEON |
21+ |
SMD |
16230 |
十年信誉,只做原装,有挂就有现货! |
|||
INFINEON/英飞凌 |
21+ |
TO-220 |
20000 |
原装现货假一罚十 |
|||
INFINEON |
22+ |
sot |
6600 |
正品渠道现货,终端可提供BOM表配单。 |
|||
INFINEON/英飞凌 |
25+ |
TO-220 |
32000 |
INFINEON/英飞凌全新特价IRF3710PBF即刻询购立享优惠#长期有货 |
|||
IR |
23+ |
T0-220 |
1600 |
绝对全新原装!优势供货渠道!特价!请放心订购! |
|||
25+ |
TO-220 |
18000 |
原厂直接发货进口原装 |
IRF3710PBF 价格
参考价格：￥2.1874
IRF3710PBF 资料下载更多...
IRF3710PBF相关电子新闻
IRF3710PBF原装现货
IRF3710PBF原装正品
2021-8-9
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