AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and imp

N-Channel Enhancement Mode MOSFET

Description The IRF3710Z uses advanced trench technology and design to provide excellent RDS(ON) with low gat e charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =60A RDS(ON)

采用 TO-220 封装的 100V 单 N 沟道功率 MOSFET

Advanced Process Technology Ultra Low On-Resistance

文件：4.63191 Mbytes Page：12 Pages

N-Channel MOSFET Transistor

文件：339.41 Kbytes Page：2 Pages

Advanced Process Technology

VDSS = 100V RDS(on) = 18mΩ ID = 59A Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and imp

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications,this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impr

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications,this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impr

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and imp

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications,this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impr

Advanced Process Technology Ultra Low On-Resistance

文件：4.63191 Mbytes Page：12 Pages

Isc N-Channel MOSFET Transistor

文件：301.06 Kbytes Page：2 Pages

100V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-262 封装

Advanced Process Technology

文件：387.76 Kbytes Page：12 Pages

Advanced Process Technology

文件：387.76 Kbytes Page：12 Pages

Advanced Process Technology Ultra Low On-Resistance

文件：4.63191 Mbytes Page：12 Pages

Isc N-Channel MOSFET Transistor

文件：189.74 Kbytes Page：2 Pages

100V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装

N-Channel 100-V (D-S) MOSFET

Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed

General Purpose Packaging Tape

文件：14.65 Kbytes Page：2 Pages

Nytye®Mounting Platforms

文件：241.29 Kbytes Page：1 Pages

Secondary Side Synchronous Post Regulator

文件：226.91 Kbytes Page：12 Pages

59A100V N-CHANNEL POWER MOSFET TRANSISTOR

文件：278.19 Kbytes Page：7 Pages