IRF3710Z价格

参考价格:¥8.2224

型号:IRF3710ZLPBF 品牌:International 备注:这里有IRF3710Z多少钱,2026年最近7天走势,今日出价,今日竞价,IRF3710Z批发/采购报价,IRF3710Z行情走势销售排行榜,IRF3710Z报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF3710Z

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and imp

IRF

IRF3710Z

N-Channel Enhancement Mode MOSFET

Description The IRF3710Z uses advanced trench technology and design to provide excellent RDS(ON) with low gat e charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =60A RDS(ON)

EVVOSEMI

翊欧

IRF3710Z

采用 TO-220 封装的 100V 单 N 沟道功率 MOSFET

Infineon

英飞凌

IRF3710Z

Advanced Process Technology Ultra Low On-Resistance

文件:4.63191 Mbytes Page:12 Pages

KERSEMI

IRF3710Z

N-Channel MOSFET Transistor

文件:339.41 Kbytes Page:2 Pages

ISC

无锡固电

Advanced Process Technology

VDSS = 100V RDS(on) = 18mΩ ID = 59A Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved

IRF

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and imp

IRF

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications,this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impr

IRF

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications,this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impr

IRF

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and imp

IRF

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications,this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impr

IRF

Advanced Process Technology Ultra Low On-Resistance

文件:4.63191 Mbytes Page:12 Pages

KERSEMI

Isc N-Channel MOSFET Transistor

文件:301.06 Kbytes Page:2 Pages

ISC

无锡固电

100V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-262 封装

Infineon

英飞凌

Advanced Process Technology

文件:387.76 Kbytes Page:12 Pages

IRF

Advanced Process Technology

文件:387.76 Kbytes Page:12 Pages

IRF

Advanced Process Technology Ultra Low On-Resistance

文件:4.63191 Mbytes Page:12 Pages

KERSEMI

Isc N-Channel MOSFET Transistor

文件:189.74 Kbytes Page:2 Pages

ISC

无锡固电

100V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装

Infineon

英飞凌

N-Channel 100-V (D-S) MOSFET

Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed

AnalogPower

General Purpose Packaging Tape

文件:14.65 Kbytes Page:2 Pages

3M

Nytye®Mounting Platforms

文件:241.29 Kbytes Page:1 Pages

Heyco

Secondary Side Synchronous Post Regulator

文件:226.91 Kbytes Page:12 Pages

LINER

凌力尔特

59A100V N-CHANNEL POWER MOSFET TRANSISTOR

文件:278.19 Kbytes Page:7 Pages

KIA

可易亚半导体

IRF3710Z产品属性

  • 类型

    描述

  • 型号

    IRF3710Z

  • 制造商

    IRF

  • 制造商全称

    International Rectifier

  • 功能描述

    AUTOMOTIVE MOSFET

更新时间:2026-1-1 17:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON TECHNOLOGIES AG
25+
SMD
918000
明嘉莱只做原装正品现货
Infineon(英飞凌)
24+
D2PAK
12048
原厂可订货,技术支持,直接渠道。可签保供合同
IR
25+23+
TO220
54627
绝对原装正品现货,全新深圳原装进口现货
IR
24+
TO-220AB
8866
Infineon(英飞凌)
24+
TO-262
7793
支持大陆交货,美金交易。原装现货库存。
IR/INFINEON
24+
TO-220
5715
只做原装 有挂有货 假一罚十
IR
25+
WDFN-10
86720
全新原装进口现货价格优惠 本公司承诺原装正品假一赔
IR
NEW
TO-220
35890
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
IR
23+
TO-220
7000
IR
2447
TO-220
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货

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