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IRF3710ZGPBF中文资料
IRF3710ZGPBF数据手册规格书PDF详情
VDSS = 100V
RDS(on) = 18mΩ
ID = 59A
Description
This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Features
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
Halogen-Free
IRF3710ZGPBF产品属性
- 类型
描述
- 型号
IRF3710ZGPBF
- 功能描述
MOSFET 100V HALOGEN-FREE 1 N-CH HEXFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IRF |
24+/25+ |
50 |
原装正品现货库存价优 |
||||
VBSEMI/台湾微碧 |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
|||
INFINEON |
25+ |
TO-220 |
3000 |
就找我吧!--邀您体验愉快问购元件! |
|||
Infineon Technologies |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
|||
IR国际整流器 |
23+ |
TO-220 |
15234 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
Infineon Technologies |
23+ |
TO2203 |
9000 |
原装正品，支持实单 |
|||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
|||
Infineon Technologies |
23+ |
原装 |
7000 |
||||
IR |
24+ |
TO-262 |
8866 |
||||
IR |
23+ |
TO-262 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
IRF3710ZGPBF 资料下载更多...
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