型号 功能描述 生产厂家 企业 LOGO 操作
IRF3711Z

HEXFET Power MOSFET

Applications • High Frequency Synchronous Buck Converters for Computer Processor Power Benefits • Low RDS(on) at 4.5V VGS • Ultra-Low Gate Impedance • Fully Characterized Avalanche Voltage and Current

IRF

HEXFET Power MOSFET

Benefits ● Low RDS(on) at 4.5V VGS ● Ultra-Low Gate Impedance ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency Synchronous Buck Converters for Computer Processor Power

IRF

High Frequency Synchronous Buck Converters for Computer Processor Power

Benefits ● Low RDS(on) at 4.5V VGS ● Ultra-Low Gate Impedance ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency Synchronous Buck Converters for Computer Processor Power

IRF

HEXFET Power MOSFET

Benefits ● Low RDS(on) at 4.5V VGS ● Ultra-Low Gate Impedance ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency Synchronous Buck Converters for Computer Processor Power ● Lead-Free

IRF

HEXFET Power MOSFET

Benefits ● Low RDS(on) at 4.5V VGS ● Ultra-Low Gate Impedance ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency Synchronous Buck Converters for Computer Processor Power

IRF

High Frequency Synchronous Buck Converters for Computer Processor Power

Benefits ● Low RDS(on) at 4.5V VGS ● Ultra-Low Gate Impedance ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency Synchronous Buck Converters for Computer Processor Power

IRF

HEXFET Power MOSFET

Benefits ● Low RDS(on) at 4.5V VGS ● Ultra-Low Gate Impedance ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency Synchronous Buck Converters for Computer Processor Power ● Lead-Free

IRF

High Frequency Synchronous Buck Converters for Computer Processor Power

Benefits ● Low RDS(on) at 4.5V VGS ● Ultra-Low Gate Impedance ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency Synchronous Buck Converters for Computer Processor Power

IRF

HEXFET Power MOSFET

Applications • High Frequency Synchronous Buck Converters for Computer Processor Power Benefits • Low RDS(on) at 4.5V VGS • Ultra-Low Gate Impedance • Fully Characterized Avalanche Voltage and Current

IRF

HEXFET Power MOSFET

Applications • High Frequency Synchronous Buck Converters for Computer Processor Power • Lead-Free Benefits • Low RDS(on) at 4.5V VGS • Ultra-Low Gate Impedance • Fully Characterized Avalanche Voltage and Current

IRF

HEXFET Power MOSFET

Applications • High Frequency Synchronous Buck Converters for Computer Processor Power • Lead-Free Benefits • Low RDS(on) at 4.5V VGS • Ultra-Low Gate Impedance • Fully Characterized Avalanche Voltage and Current

IRF

HEXFET Power MOSFET

Applications • High Frequency Synchronous Buck Converters for Computer Processor Power Benefits • Low RDS(on) at 4.5V VGS • Ultra-Low Gate Impedance • Fully Characterized Avalanche Voltage and Current

IRF

HEXFET Power MOSFET

Applications • High Frequency Synchronous Buck Converters for Computer Processor Power • Lead-Free Benefits • Low RDS(on) at 4.5V VGS • Ultra-Low Gate Impedance • Fully Characterized Avalanche Voltage and Current

IRF

HEXFET Power MOSFET

Infineon

英飞凌

MOSFET N-CH 20V 92A TO-220AB

Infineon

英飞凌

MOSFET N-CH 20V 92A D2PAK

Infineon

英飞凌

N-Channel 30-V (D-S) MOSFET

FEATURES TrenchFET® • Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC

VBSEMI

微碧半导体

Nytye®Mounting Platforms

文件:241.29 Kbytes Page:1 Pages

Heyco

3 1/2 DIGIT MICROPROCESSOR COMPATIBLE A/D

文件:286.48 Kbytes Page:9 Pages

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

3 1/2 DIGIT MICROPROCESSOR COMPATIBLE A/D

文件:286.48 Kbytes Page:9 Pages

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

SAW Components Low-Loss Filter 315,00 MHz

文件:69.89 Kbytes Page:6 Pages

EPCOS

爱普科斯

IRF3711Z产品属性

  • 类型

    描述

  • 型号

    IRF3711Z

  • 功能描述

    MOSFET N-CH 20V 92A TO-220AB

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2025-10-4 16:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
TO-220AB
8866
IR
2019+
TO-262
3470
原厂渠道 可含税出货
IR
23+
TO-220AB
6000
原装正品,支持实单
IR
2023+
TO-220AB
50000
原装现货
Infineon Technologies
23+
原装
7000
IR
20+
TO-220AB
36900
原装优势主营型号-可开原型号增税票
原装正品
23+
TO-220-3
52706
##公司主营品牌长期供应100%原装现货可含税提供技术
IR
24+
TO-220
27500
原装正品,价格最低!
IR
NEW
TO-220
35890
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
IR
17+
D2-Pak
31518
原装正品 可含税交易

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