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位置：首页 > IC中文资料第1063页 > IRF3710

IRF3710价格

参考价格：￥6.3669

型号：IRF3710LPBF 品牌：International 备注：这里有IRF3710多少钱，2025年最近7天走势，今日出价，今日竞价，IRF3710批发/采购报价，IRF3710行情走势销售排行榜，IRF3710报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF3710

Power MOSFET(Vdss=100V, Rds(on)=23mohm, Id=57A)

VDSS = 100V RDS(on) = 23mΩ ID = 57A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig

IRF

IRF3710

isc N-Channel Mosfet Transistor

文件：65.319 Kbytes Page：2 Pages

ISC

无锡固电

IRF3710

Advanced Process Technology

文件：715.62 Kbytes Page：8 Pages

KERSEMI

IRF3710

N -Channel Power MOSFET (100V/59A)

文件：280.15 Kbytes Page：2 Pages

FS

IRF3710

N-Channel Power MOSFET

文件：346.96 Kbytes Page：7 Pages

NELLSEMI

尼尔半导体

IRF3710

MOS FET:Low Voltage

FS

IRF3710

中低压MOS≤200V

FOSHAN

蓝箭电子

IRF3710

100V N-Channel Power MOSFET

ETC

知名厂家

IRF3710L

Power MOSFET(Vdss=100V, Rds(on)=0.025ohm, Id=57A)

VDSS = 100V RDS(on) = 23mΩ ID = 57A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig

IRF

IRF3710LPBF

HEXFET짰 Power MOSFET ( VDSS = 100V , RDS(on) = 23m廓 , ID = 57A )

VDSS = 100V RDS(on) = 23mΩ ID = 57A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig

IRF

IRF3710PBF

HEXFET Power MOSFET

VDSS = 100V RDS(on) = 23mΩ ID = 57A Description Advanced HEXFETÆ Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig

IRF

IRF3710S

Power MOSFET(Vdss=100V, Rds(on)=0.025ohm, Id=57A)

VDSS = 100V RDS(on) = 23mΩ ID = 57A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig

IRF

IRF3710SPBF

HEXFET짰 Power MOSFET ( VDSS = 100V , RDS(on) = 23m廓 , ID = 57A )

VDSS = 100V RDS(on) = 23mΩ ID = 57A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig

IRF

IRF3710STRLPBF

Advanced Process Technology

VDSS = 100V RDS(on) = 23mΩ ID = 57A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig

IRF

IRF3710STRRPBF

HEXFET짰 Power MOSFET

VDSS = 100V RDS(on) = 23mΩ ID = 57A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig

IRF

IRF3710Z

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and imp

IRF

IRF3710Z

N-Channel Enhancement Mode MOSFET

Description The IRF3710Z uses advanced trench technology and design to provide excellent RDS(ON) with low gat e charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =60A RDS(ON)

EVVOSEMI

翊欧

IRF3710ZGPBF

Advanced Process Technology

VDSS = 100V RDS(on) = 18mΩ ID = 59A Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved

IRF

IRF3710ZL

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and imp

IRF

IRF3710ZLPBF

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications,this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impr

IRF

IRF3710ZPBF

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications,this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impr

IRF

IRF3710ZS

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and imp

IRF

IRF3710ZSPBF

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications,this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impr

IRF

IRF3710_18

N-Channel MOSFET Transistor

文件：338.78 Kbytes Page：2 Pages

ISC

无锡固电

IRF3710L

Isc N-Channel MOSFET Transistor

文件：300.38 Kbytes Page：2 Pages

ISC

无锡固电

IRF3710PBF

57A,100V Heatsink Planar N-Channel Power MOSFET

文件：1.6614 Mbytes Page：7 Pages

THINKISEMI

思祁半导体

IRF3710PBF_15

Advanced Process Technology

文件：224.46 Kbytes Page：8 Pages

IRF

IRF3710S

Isc N-Channel MOSFET Transistor

文件：189.08 Kbytes Page：2 Pages

ISC

无锡固电

IRF3710SPBF_15

Advanced Process Technology

文件：309.51 Kbytes Page：10 Pages

IRF

IRF3710Z

N-Channel MOSFET Transistor

文件：339.41 Kbytes Page：2 Pages

ISC

无锡固电

IRF3710Z

Advanced Process Technology Ultra Low On-Resistance

文件：4.63191 Mbytes Page：12 Pages

KERSEMI

IRF3710ZL

Isc N-Channel MOSFET Transistor

文件：301.06 Kbytes Page：2 Pages

ISC

无锡固电

IRF3710ZL

Advanced Process Technology Ultra Low On-Resistance

文件：4.63191 Mbytes Page：12 Pages

KERSEMI

IRF3710ZPBF

Advanced Process Technology

文件：387.76 Kbytes Page：12 Pages

IRF

IRF3710ZPBF_15

Advanced Process Technology

文件：387.76 Kbytes Page：12 Pages

IRF

IRF3710ZS

Isc N-Channel MOSFET Transistor

文件：189.74 Kbytes Page：2 Pages

ISC

无锡固电

IRF3710ZS

Advanced Process Technology Ultra Low On-Resistance

文件：4.63191 Mbytes Page：12 Pages

KERSEMI

AMAUIF3710Z

N-Channel 100-V (D-S) MOSFET

Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed

AnalogPower

3710

General Purpose Packaging Tape

文件：14.65 Kbytes Page：2 Pages

3M

3710

Nytye®Mounting Platforms

文件：241.29 Kbytes Page：1 Pages

Heyco

3710EFE

Secondary Side Synchronous Post Regulator

文件：226.91 Kbytes Page：12 Pages

LINER

凌力尔特

3710Z

59A100V N-CHANNEL POWER MOSFET TRANSISTOR

文件：278.19 Kbytes Page：7 Pages

KIA

可易亚半导体

IRF3710产品属性

  • 类型

    描述

  • 型号

    IRF3710

  • 制造商

    International Rectifier

  • 功能描述

    MOSFET N TO-220

IRF3710供应商更多...

更新时间：2025-11-3 23:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市宏捷佳电子科技有限公司
IRF3710ZSTRLPBF
IR
2023+
TO-263
50000
原装现货
询价
深圳市高捷芯城科技有限公司
IRF3710ZSTRLPBF
Infineon(英飞凌)
24+
D2PAK
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
深圳市得捷芯城科技有限公司
IRF3710SPBF
IR(国际整流器)
24+
NA/
8735
原厂直销,现货供应,账期支持!
询价
上海意淼电子科技有限公司
IRF3710PBF
INFINEON
23+
K-B
188000
只有原装,请来电咨询
询价
深圳市亿芯隆邦电子有限公司
IRF3710PBF
INFINEON/英飞凌
25+
590000
只做原厂原装正品
询价
深圳市纳艾斯科技有限公司
IRF3710
IR
24+
TO220
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
询价
深圳市英卓尔科技有限公司
IRF3710BF
IRF
20+
TO220
26580
全新原装长期特价销售
询价
深圳市金芯世纪电子有限公司
IRF3710LPBF
INFINEON/英飞凌
22+
100000
代理渠道/只做原装/可含税
询价
深圳市科芯源微电子有限公司
IRF3710PBF
INFINEON/英飞凌
25+
TO220AB
54648
百分百原装现货 实单必成 欢迎询价
询价
深圳市富利微电子科技有限公司
IRF3710PBF
IR
24+
TO-220
26371
保证进口原装现货假一赔十
询价

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IRF3710规格书下载地址

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IRF3710数据表相关新闻

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