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位置：首页 > IC中文资料 > IRF3710

IRF3710价格

参考价格：￥6.3669

型号：IRF3710LPBF 品牌：International 备注：这里有IRF3710多少钱，2026年最近7天走势，今日出价，今日竞价，IRF3710批发/采购报价，IRF3710行情走势销售排行榜，IRF3710报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF3710

Power MOSFET(Vdss=100V, Rds(on)=23mohm, Id=57A)

VDSS = 100V RDS(on) = 23mΩ ID = 57A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig

IRF

IRF3710

isc N-Channel Mosfet Transistor

文件：65.319 Kbytes Page：2 Pages

ISC

无锡固电

IRF3710

Advanced Process Technology

文件：715.62 Kbytes Page：8 Pages

KERSEMI

IRF3710

N -Channel Power MOSFET (100V/59A)

文件：280.15 Kbytes Page：2 Pages

FS

IRF3710

N-Channel Power MOSFET

文件：346.96 Kbytes Page：7 Pages

NELLSEMI

尼尔半导体

IRF3710

MOS FET:Low Voltage

FS

IRF3710

中低压MOS≤200V

FOSHAN

蓝箭电子

IRF3710

100V N-Channel Power MOSFET

MINOS

IRF3710L

Power MOSFET(Vdss=100V, Rds(on)=0.025ohm, Id=57A)

VDSS = 100V RDS(on) = 23mΩ ID = 57A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig

IRF

IRF3710LPBF

HEXFET짰 Power MOSFET ( VDSS = 100V , RDS(on) = 23m廓 , ID = 57A )

VDSS = 100V RDS(on) = 23mΩ ID = 57A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig

IRF

IRF3710PBF

HEXFET Power MOSFET

VDSS = 100V RDS(on) = 23mΩ ID = 57A Description Advanced HEXFETÆ Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig

IRF

IRF3710S

Power MOSFET(Vdss=100V, Rds(on)=0.025ohm, Id=57A)

VDSS = 100V RDS(on) = 23mΩ ID = 57A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig

IRF

IRF3710SPBF

HEXFET짰 Power MOSFET ( VDSS = 100V , RDS(on) = 23m廓 , ID = 57A )

VDSS = 100V RDS(on) = 23mΩ ID = 57A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig

IRF

IRF3710STRLPBF

Advanced Process Technology

VDSS = 100V RDS(on) = 23mΩ ID = 57A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig

IRF

IRF3710STRRPBF

HEXFET짰 Power MOSFET

VDSS = 100V RDS(on) = 23mΩ ID = 57A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig

IRF

IRF3710Z

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and imp

IRF

IRF3710Z

丝印代码：EVVO-IRF3710-YYYY；N-Channel Enhancement Mode MOSFET

Description The IRF3710Z uses advanced trench technology and design to provide excellent RDS(ON) with low gat e charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =60A RDS(ON)

EVVOSEMI

翊欧

IRF3710ZGPBF

Advanced Process Technology

VDSS = 100V RDS(on) = 18mΩ ID = 59A Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved

IRF

IRF3710ZL

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and imp

IRF

IRF3710ZLPBF

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications,this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impr

IRF

IRF3710ZPBF

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications,this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impr

IRF

IRF3710ZS

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and imp

IRF

IRF3710ZSPBF

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications,this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impr

IRF

IRF3710_18

N-Channel MOSFET Transistor

文件：338.78 Kbytes Page：2 Pages

ISC

无锡固电

IRF3710L

Isc N-Channel MOSFET Transistor

文件：300.38 Kbytes Page：2 Pages

ISC

无锡固电

IRF3710PBF

57A,100V Heatsink Planar N-Channel Power MOSFET

文件：1.6614 Mbytes Page：7 Pages

THINKISEMI

思祁半导体

IRF3710PBF_15

Advanced Process Technology

文件：224.46 Kbytes Page：8 Pages

IRF

IRF3710S

丝印代码：D2PAK；Isc N-Channel MOSFET Transistor

文件：189.08 Kbytes Page：2 Pages

ISC

无锡固电

IRF3710SPBF_15

Advanced Process Technology

文件：309.51 Kbytes Page：10 Pages

IRF

IRF3710Z

N-Channel MOSFET Transistor

文件：339.41 Kbytes Page：2 Pages

ISC

无锡固电

IRF3710Z

Advanced Process Technology Ultra Low On-Resistance

文件：4.63191 Mbytes Page：12 Pages

KERSEMI

IRF3710ZL

Isc N-Channel MOSFET Transistor

文件：301.06 Kbytes Page：2 Pages

ISC

无锡固电

IRF3710ZL

Advanced Process Technology Ultra Low On-Resistance

文件：4.63191 Mbytes Page：12 Pages

KERSEMI

IRF3710ZPBF

Advanced Process Technology

文件：387.76 Kbytes Page：12 Pages

IRF

IRF3710ZPBF_15

Advanced Process Technology

文件：387.76 Kbytes Page：12 Pages

IRF

IRF3710ZS

Advanced Process Technology Ultra Low On-Resistance

文件：4.63191 Mbytes Page：12 Pages

KERSEMI

IRF3710ZS

丝印代码：D2PAK；Isc N-Channel MOSFET Transistor

文件：189.74 Kbytes Page：2 Pages

ISC

无锡固电

CL-CR3710

Integrated AVI/ATAPI DVD Drive Manager

Overview The CL-CR3710 is Cirrus Logic’s high-integration, highperformance ATAPI DVD drive manager. It integrates all required components for a DVD loader for DVD players, game consoles, and DVD-ROM drives. The CL-CR3710 includes an RF amp, servo control processor, data channel, DVD ECC, CSS auth

CIRRUS

凌云逻辑

IRFN3710

TRANSISTOR N-CHANNEL(BVdss=100V, Rds(on)=0.028ohm, Id=45A)

100 Volt, 0.028Ω, HEXFET Generation 5 HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design for which HEXFETs are well known, prov

IRF

LM3710

Microprocessor Supervisory Circuits with Power Fail Input, Low Line Output, Manual Reset and Watchdog Timer

文件：319.77 Kbytes Page：16 Pages

NSC

国半

UC3710N

High Current FET Driver

文件：72.37 Kbytes Page：4 Pages

TI

德州仪器

UC3710T

High Current FET Driver

文件：72.37 Kbytes Page：4 Pages

TI

德州仪器

IRF3710产品属性

  • 类型

    描述

  • OPN：

    IRF3710PBF

  • Qualification：

    Non-Automotive

  • Package name：

    TO220

  • VDS max：

    100 V

  • RDS (on) @10V max：

    23 mΩ

  • ID @25°C max：

    57 A

  • QG typ @10V：

    86.7 nC

  • Polarity：

    N

  • VGS(th) min：

    2 V

  • VGS(th) max：

    4 V

  • VGS(th)：

    3 V

  • Technology：

    IR MOSFET™

IRF3710供应商更多...

更新时间：2026-5-24 10:21:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市金华微盛电子有限公司
IRF3710STRLPBF
Infineon
19+
TO-263
30000
询价
深圳市赛尔通科技有限公司
IRF3710ZLPBF
IR
23+
5000
原装现货 本公司为一般纳税人,可开17%增值税票
询价
深圳市卓越微芯电子有限公司
IRF3710ZPBF
IR
25+
TO-220
9600
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
中天科工半导体（深圳）有限公司
IRF3710ZSTRLPBF
INFINEON/英飞凌
25+
TO-263
32000
INFINEON/英飞凌全新特价IRF3710ZSTRLPBF即刻询购立享优惠#长期有货
询价
深圳市欧立现代科技有限公司
IRF3710PBF
IR
24+
TO-220
6050
原装现货,可开13%税票
询价
深圳市凌旭科技有限公司
IRF3710PBF
INFINEON
21+
SMD
16230
十年信誉,只做原装,有挂就有现货!
询价
深圳深宇韬电子科技有限公司
IRF3710ZSTRLPBF
INFINEON
22+
sot
6600
正品渠道现货,终端可提供BOM表配单。
询价
深圳市富利微电子科技有限公司
IRF3710PBF
IR
25+
TO-220
26371
保证进口原装现货假一赔十
询价
深圳市勤思达科技有限公司
IRF3710S
IR
24+
SOT-263
2000
原装正品,欢迎咨询
询价
深圳市嵩宏达科技有限公司
IRF3710STRLPBF
IR
24+
TO263
86
全新原装,一手货源,全场热卖!
询价

IRF3710芯片相关品牌

IRF3710规格书下载地址

IRF3710参数引脚图相关

IRF3710数据表相关新闻

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