Power MOSFET(Vdss=100V, Rds(on)=0.025ohm, Id=57A)

VDSS = 100V RDS(on) = 23mΩ ID = 57A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig

Isc N-Channel MOSFET Transistor

文件：189.08 Kbytes Page：2 Pages

100V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装

HEXFET짰 Power MOSFET ( VDSS = 100V , RDS(on) = 23m廓 , ID = 57A )

VDSS = 100V RDS(on) = 23mΩ ID = 57A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig

Advanced Process Technology

VDSS = 100V RDS(on) = 23mΩ ID = 57A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig

HEXFET짰 Power MOSFET

VDSS = 100V RDS(on) = 23mΩ ID = 57A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig

Advanced Process Technology

文件：309.51 Kbytes Page：10 Pages

N-Channel 100-V (D-S) MOSFET

Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed

General Purpose Packaging Tape

文件：14.65 Kbytes Page：2 Pages

Nytye®Mounting Platforms

文件：241.29 Kbytes Page：1 Pages

Secondary Side Synchronous Post Regulator

文件：226.91 Kbytes Page：12 Pages

59A100V N-CHANNEL POWER MOSFET TRANSISTOR

文件：278.19 Kbytes Page：7 Pages