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IRF140价格
参考价格：￥7.2251
型号：IRF1404LPBF 品牌：INTERNATIONAL 备注：这里有IRF140多少钱，2026年最近7天走势，今日出价，今日竞价，IRF140批发/采购报价，IRF140行情走势销售排行榜，IRF140报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF140 | N-CHANNEL POWER MOSFETS N-CHANNEL POWER MOSFETS | SAMSUNG 三星 |   | |
IRF140 | N-Channel Power MOSFETs, 27 A, 60-100V
| FAIRCHILD 仙童半导体 | | |
IRF140 | TRANSISTORS N-CHANNEL(Vdss=100V, Rds(on)=0.077ohm, Id=28A) The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and dio | IRF | | |
IRF140 | 28A, 100V, 0.077 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching | INTERSIL | | |
IRF140 | N-Channel Power MOSFETs, 27 A, 60-100 V Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VGS Rated at ±20 V ● | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
IRF140 | High Power,High Speed Applications DESCRIPTION • Drain Current ID=27A@ TC=25℃ • Drain Source Voltage- : VDSS= 100V(Min) • Static Drain-Source On-Resistance : RDS(on) =0.085Ω(Max) • High Power,High Speed Applications APPLICATIONS • Switching power supplies | ISC 无锡固电 | | |
IRF140 | Repetitive Avalanche Ratings 文件：147.86 Kbytes Page：7 Pages | IRF | | |
IRF140 | N-CHANNEL POWER MOSFET 文件：22.12 Kbytes Page：2 Pages | SEME-LAB | | |
IRF140 | 28A, 100V, 0.077 Ohm, N-Channel Power MOSFET | RENESAS 瑞萨 | | |
IRF140 | MOSFETs and JFETs | TTELEC | | |
IRF140 | HiRel MOSFETs | INFINEON 英飞凌 | | |
N-Channel Power MOSFETs, 27 A, 60-100V
| FAIRCHILD 仙童半导体 | | ||
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A?? Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn | IRF | | ||
Advanced Process Technology Ultra Low On-Resistance Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn | KERSEMI | | ||
isc N-Channel Mosfet Transistor Description Seventh Generation HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well k | ISC 无锡固电 | | ||
Ultra Low On-Resistance Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. l Advanced Process Technology l Ultra Low On-Resistance l Dynam | KERSEMI | | ||
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A?? Description Seventh Generation HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temp | IRF | | ||
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature | IRF | | ||
HEXFET짰 Power MOSFET Description Seventh Generation HEXFETÆPower MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperat | IRF | | ||
HEXFET짰 Power MOSFET Description Seventh Generation HEXFETÆPower MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature | KERSEMI | | ||
Advanced Process Technology Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn | KERSEMI | | ||
HEXFET짰 Power MOSFET Description Seventh Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well k | IRF | | ||
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A?? Description Seventh Generation HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temp | IRF | | ||
Ultra Low On-Resistance Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. l Advanced Process Technology l Ultra Low On-Resistance l Dynam | KERSEMI | | ||
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature | IRF | | ||
HEXFET짰 Power MOSFET Description Seventh Generation HEXFETÆPower MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperat | IRF | | ||
HEXFET짰 Power MOSFET Description Seventh Generation HEXFETÆPower MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature | KERSEMI | | ||
Advanced Process Technology Description Seventh Generation HEXFETÆPower MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperat | IRF | | ||
AUTOMOTIVE MOSFET Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro | KERSEMI | | ||
N-Channel MOSFET ■ Features ● VDS (V) = 40V ● ID = 75 A (VGS = 10V) ● RDS(ON) | KEXIN 科信电子 | | ||
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature | IRF | | ||
Advanced Process Technology Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi | IRF | | ||
Advanced Process Technology Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi | IRF | | ||
AUTOMOTIVE MOSFET Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro | KERSEMI | | ||
Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature | IRF | | ||
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature | IRF | | ||
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature | IRF | | ||
Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature | IRF | | ||
AUTOMOTIVE MOSFET Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro | KERSEMI | | ||
Advanced Process Technology Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi | IRF | | ||
AUTOMOTIVE MOSFET Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro | KERSEMI | | ||
Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature | IRF | | ||
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature | IRF | | ||
Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature | IRF | | ||
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A?? Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating tempe | IRF | | ||
Electric Power Steering (EPS) Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temp | KERSEMI | | ||
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A?? Description Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive av | IRF | | ||
AUTOMOTIVE MOSFET Description Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive av | KERSEMI | | ||
AUTOMOTIVE MOSFET ( VDSS = 55V , RDS(on) = 5.3m廓 , ID = 131A ) Description Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive av | IRF | | ||
AUTOMOTIVE MOSFET VDSS = 55V RDS(on) = 5.3mΩ ID = 169A Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOS | IRF | | ||
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A?? Description Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive av | IRF | | ||
AUTOMOTIVE MOSFET Description Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive av | KERSEMI | | ||
AUTOMOTIVE MOSFET ( VDSS = 55V , RDS(on) = 5.3m廓 , ID = 131A ) Description Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive av | IRF | | ||
AUTOMOTIVE MOSFET VDSS = 55V RDS(on) = 4.9mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temp | IRF | | ||
AUTOMOTIVE MOSFET VDSS = 55V RDS(on) = 4.9mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temp | IRF | | ||
AUTOMOTIVE MOSFET VDSS = 55V RDS(on) = 4.9mΩ ID = 120A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating tem | IRF | | ||
HEXFET짰 Power MOSFET ( VDSS = 55V , RDS(on) = 4.9m廓 , ID = 120A ) VDSS = 55V RDS(on) = 4.9mΩ ID = 120A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating tem | IRF | | ||
AUTOMOTIVE MOSFET ( VDSS = 55V , RDS(on) = 4.9m廓 , ID = 75A ) VDSS = 55V RDS(on) = 4.9mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temp | IRF | | ||
AUTOMOTIVE MOSFET ( VDSS = 55V , RDS(on) = 4.9m廓 , ID = 75A ) VDSS = 55V RDS(on) = 4.9mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temp | IRF | | ||
AUTOMOTIVE MOSFET VDSS = 55V RDS(on) = 4.9mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temp | IRF | |
IRF140产品属性
- 类型
描述
- 型号
IRF140
- 制造商
International Rectifier
- 功能描述
Trans MOSFET N-CH 100V 28A 3-Pin(2+Tab) TO-3
- 制造商
International Rectifier
- 功能描述
TRANS MOSFET N-CH 100V 28A 3PIN TO-204AE - Bulk
- 制造商
INTERNATIONAL WIRE
- 功能描述
MOSFET
- 制造商
International Rectifier
- 功能描述
N CH MOSFET, 100V, 28A, TO-204AE; Transistor
- Polarity
N Channel; Continuous Drain Current
- Id
28A; Drain Source Voltage
- Vds
100V; On Resistance
- Rds(on)
77mohm; Rds(on) Test Voltage
- Vgs
10V; Threshold Voltage Vgs
- Typ
4V; No. of
- Pins
2 ;RoHS
- Compliant
No
- 制造商
TT Electronics/Semelab
- 功能描述
MOSFET N-Channel 100V 28A TO-3
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
25+ |
TO-220 |
20540 |
保证进口原装现货假一赔十 |
|||
IR |
13+ |
TO-220/TO-263 |
10000 |
深圳市勤思达科技有限公司主营IR系列全新原装正品,公司现货供应IRF1405,IRF1405PBF ,IRF1405STR,欢迎咨询洽谈。 |
|||
INFINEON |
23+ |
TO-220 |
21195 |
正规渠道,只有原装! |
|||
IR |
25+ |
TO-220 |
90000 |
一级代理现货保证进口原装正品假一罚十价格合理 |
|||
IR |
24+ |
TO-220AB |
10000 |
只做原装欢迎含税交易,假一赔十,放心购买 |
|||
IR |
19+ |
TO-263 |
34000 |
||||
INFINEON |
22+ |
TO-220 |
72000 |
原装正品可支持验货,欢迎咨询 |
|||
IR |
25+ |
TO-263 |
20000 |
原装现货假一罚十 |
|||
IR |
25+ |
TO220 |
12000 |
原厂代理渠道进口原装现货QQ：505546343 电话：17621633780 |
|||
IR |
17+ |
TO-220 |
3000 |
原装现货、工厂库存 |
IRF140芯片相关品牌
IRF140规格书下载地址
IRF140参数引脚图相关
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- IRF1010ZLPBF
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IRF140数据表相关新闻
IRF1404PBF
进口代理
2025-4-2IRF1407PBF
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深圳市科恒伟业电子有限公司 深圳市福田区华强北振兴路101号华匀大厦2栋5楼516 网站 http://www.kehengweiyedz.cn 网站http://www.kehengweiye.com 邮箱：yulin522@126.com 0755-83200050 15817287769 柯先生
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IRA-S210ST01，全新原装现货当天发货或门市自取0755-82732291.
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2020-1-12IR51H224-自激式半桥
特点 ·输出功率MOSFET在半桥配置 ·高侧栅极驱动器引导操作设计 ·自举二极管集成包（HD型） ·精确的定时控制两个功率MOSFET匹配延迟获得50％的占空比匹配死区的1.2us ·内部振荡器具有可编程的频率 ·15.6V齐纳钳位VCC的离线运行的半桥式输出是用RT淘汰 ·微功率启动 说明 该IR51H（四）XXX是完整的高电压，高转速，selfoscillating半桥电路.专有的HVIC和闩锁免疫CMOS技术，随着的HEXFET®功率MOSFET技术，使
2013-2-8
DdatasheetPDF页码索引
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