Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature

Primary Standard Capacitor

Features: NEW 5 nF and 10 nF now available A national laboratory standard For calibrating working standards Standard for dissipation factor Available in 10, 100 and 1000 pF 20 ppm/year stability, typically better Hermetically sealed in dry nitrogen

Precision Lab Standard N Connectors

Features o Precision Connector - Interface dimensions per MIL-STD-348 Test connector o Rugged Construction - Numerically controlled machining is used to produce high quality uniform parts with controlled concentricity and surface finishes. The result is excellent SWR repeatability.

250A竊?0V N-CHANNEL MOSFET

文件：147.17 Kbytes Page：6 Pages

ALUMINUM CHASSIS

文件：109.8 Kbytes Page：1 Pages

2??Max On Resistance, 짹15 V/12 V/짹5 V 4:1 iCMOS??Multiplexer

文件：252.96 Kbytes Page：17 Pages