HEXFET짰 Power MOSFET

Description Seventh Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well k

Advanced Process Technology

Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn

Advanced Process Technology

文件：214.2 Kbytes Page：9 Pages

Advanced Process Technology

文件：214.2 Kbytes Page：9 Pages

Primary Standard Capacitor

Features: NEW 5 nF and 10 nF now available A national laboratory standard For calibrating working standards Standard for dissipation factor Available in 10, 100 and 1000 pF 20 ppm/year stability, typically better Hermetically sealed in dry nitrogen

Precision Lab Standard N Connectors

Features o Precision Connector - Interface dimensions per MIL-STD-348 Test connector o Rugged Construction - Numerically controlled machining is used to produce high quality uniform parts with controlled concentricity and surface finishes. The result is excellent SWR repeatability.

It looks like a servo

文件：115.89 Kbytes Page：2 Pages

250A竊?0V N-CHANNEL MOSFET

文件：147.17 Kbytes Page：6 Pages

ALUMINUM CHASSIS

文件：109.8 Kbytes Page：1 Pages