IRF1404L价格

参考价格:¥7.2251

型号:IRF1404LPBF 品牌:INTERNATIONAL 备注:这里有IRF1404L多少钱,2026年最近7天走势,今日出价,今日竞价,IRF1404L批发/采购报价,IRF1404L行情走势销售排行榜,IRF1404L报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF1404L

Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A??

Description Seventh Generation HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temp

IRF

IRF1404L

Ultra Low On-Resistance

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. l Advanced Process Technology l Ultra Low On-Resistance l Dynam

KERSEMI

IRF1404L

采用 TO-262 封装的 40V 单 N 沟道功率 MOSFET

Infineon

英飞凌

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature

IRF

HEXFET짰 Power MOSFET

Description Seventh Generation HEXFETÆPower MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperat

IRF

HEXFET짰 Power MOSFET

Description Seventh Generation HEXFETÆPower MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature

KERSEMI

Advanced Process Technology

文件:279.7 Kbytes Page:11 Pages

IRF

Primary Standard Capacitor

Features: NEW 5 nF and 10 nF now available A national laboratory standard For calibrating working standards Standard for dissipation factor Available in 10, 100 and 1000 pF 20 ppm/year stability, typically better Hermetically sealed in dry nitrogen

IET

Precision Lab Standard N Connectors

Features o Precision Connector - Interface dimensions per MIL-STD-348 Test connector o Rugged Construction - Numerically controlled machining is used to produce high quality uniform parts with controlled concentricity and surface finishes. The result is excellent SWR repeatability.

APITECH

It looks like a servo

文件:115.89 Kbytes Page:2 Pages

Adafruit

250A竊?0V N-CHANNEL MOSFET

文件:147.17 Kbytes Page:6 Pages

KIA

可易亚半导体

ALUMINUM CHASSIS

文件:109.8 Kbytes Page:1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

IRF1404L产品属性

  • 类型

    描述

  • 型号

    IRF1404L

  • 功能描述

    MOSFET N-CH 40V 162A TO-262

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2026-1-1 22:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
2016+
TO262
3000
只做原装,假一罚十,公司可开17%增值税发票!
Infineon/英飞凌
24+
TO-262
25000
原装正品,假一赔十!
INFINEON/英飞凌
25+
明嘉莱只做原装正品现货
2510000
TO-262
IR
25+23+
TO-262
26961
绝对原装正品全新进口深圳现货
Infineon/英飞凌
21+
TO-262
6820
只做原装,质量保证
IR
24+
TO-262
6000
原装现货假一赔十
IR
24+
TO-262
8866
Infineon(英飞凌)
24+
TO-262
8498
支持大陆交货,美金交易。原装现货库存。
INFINEON/英飞凌
2407+
30098
全新原装!仓库现货,大胆开价!
IR
25+
原厂原封装
86720
全新原装进口现货价格优惠 本公司承诺原装正品假一赔

IRF1404L数据表相关新闻

  • IRF1404PBF

    进口代理

    2025-4-2
  • IRF1407PBF

    IRF1407PBF

    2022-7-22
  • IRF1404ZPBF

    深圳市科恒伟业电子有限公司 深圳市福田区华强北振兴路101号华匀大厦2栋5楼516 网站 http://www.kehengweiyedz.cn 网站http://www.kehengweiye.com 邮箱:yulin522@126.com 0755-83200050 15817287769 柯先生

    2020-4-18
  • IRA-S210ST01

    IRA-S210ST01,全新原装现货当天发货或门市自取0755-82732291.

    2020-2-17
  • IRF130CHP1100,IRF1310N,IRF1310NL,IRF1310NS,IRF1404PBF

    IRF130CHP1100,IRF1310N,IRF1310NL,IRF1310NS,IRF1404PBF

    2020-1-12
  • IR51H224-自激式半桥

    特点 ·输出功率MOSFET在半桥配置 ·高侧栅极驱动器引导操作设计 ·自举二极管集成包(HD型) ·精确的定时控制两个功率MOSFET匹配延迟获得50%的占空比匹配死区的1.2us ·内部振荡器具有可编程的频率 ·15.6V齐纳钳位VCC的离线运行的半桥式输出是用RT淘汰 ·微功率启动 说明 该IR51H(四)XXX是完整的高电压,高转速,selfoscillating半桥电路.专有的HVIC和闩锁免疫CMOS技术,随着的HEXFET®功率MOSFET技术,使

    2013-2-8