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IRF1405ZS中文资料
IRF1405ZS数据手册规格书PDF详情
VDSS = 55V
RDS(on) = 4.9mΩ
ID = 75A
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
IRF1405ZS产品属性
- 类型
描述
- 型号
IRF1405ZS
- 功能描述
MOSFET N-CH 55V 75A D2PAK
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
HEXFET®
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
19+ |
TO-263-7 |
11200 |
||||
IR/VISHAY |
SOT-263 |
30216 |
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S |
||||
IR |
24+ |
TO263-7P |
5000 |
只做原厂渠道 可追溯货源 |
|||
IR |
22+ |
D2-PAK |
9450 |
原装正品，实单请联系 |
|||
INFINEON |
100000 |
代理渠道/只做原装/可含税 |
|||||
Infineon(英飞凌) |
24+ |
TO-263-3 |
8357 |
支持大陆交货,美金交易。原装现货库存。 |
|||
IR |
2015+ |
D2-Pak |
12500 |
全新原装,现货库存长期供应 |
|||
IR |
24+ |
D2-Pak |
8866 |
||||
IR |
23+ |
TO-263 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
IR |
24+ |
TO-263 |
90000 |
一级代理商进口原装现货、价格合理 |
IRF1405ZSTRLPBF 价格
参考价格：￥3.8700
IRF1405ZS 资料下载更多...
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