VDSS = 55V

RDS(on) = 5.3mΩ

ID = 169A

Description

Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Benefits

● Advanced Process Technology

● Ultra Low On-Resistance

● Dynamic dv/dt Rating

● 175°C Operating Temperature

● Fast Switching

● Repetitive Avalanche Allowed up to Tjmax

Typical Applications

● Electric Power Steering (EPS)

● Anti-lock Braking System (ABS)

● Wiper Control

● Climate Control

● Power Door

● Lead-Free