型号 功能描述 生产厂家 企业 LOGO 操作
IRF1404ZL

Advanced Process Technology

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi

IRF

IRF1404ZL

AUTOMOTIVE MOSFET Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

KERSEMI

IRF1404ZL

Advanced Process Technology

文件:294.32 Kbytes Page:12 Pages

IRF

Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature

IRF

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature

IRF

Advanced Process Technology

文件:307.88 Kbytes Page:12 Pages

IRF

Advanced Process Technology

Infineon

英飞凌

Primary Standard Capacitor

Features: NEW 5 nF and 10 nF now available A national laboratory standard For calibrating working standards Standard for dissipation factor Available in 10, 100 and 1000 pF 20 ppm/year stability, typically better Hermetically sealed in dry nitrogen

IET

Precision Lab Standard N Connectors

Features o Precision Connector - Interface dimensions per MIL-STD-348 Test connector o Rugged Construction - Numerically controlled machining is used to produce high quality uniform parts with controlled concentricity and surface finishes. The result is excellent SWR repeatability.

APITECH

It looks like a servo

文件:115.89 Kbytes Page:2 Pages

Adafruit

250A竊?0V N-CHANNEL MOSFET

文件:147.17 Kbytes Page:6 Pages

KIA

可易亚半导体

ALUMINUM CHASSIS

文件:109.8 Kbytes Page:1 Pages

etc2List of Unclassifed Manufacturers

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IRF1404ZL产品属性

  • 类型

    描述

  • 型号

    IRF1404ZL

  • 功能描述

    MOSFET N-CH 40V 75A TO-262

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2025-9-26 14:15:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
23+
TO-262
48528
##公司主营品牌长期供应100%原装现货可含税提供技术
Infineon
24+
NA
3000
进口原装正品优势供应
IR
20+
TO-262
38900
原装优势主营型号-可开原型号增税票
IR
18+
TO-220
28399
全新原装现货,可出样品,可开增值税发票
IR
25+
TO-220
9600
百分百原装正品 真实公司现货库存 本公司只做原装 可
INFINEON/IR
16+
TO-262
1120
一级代理,专注军工、汽车、医疗、工业、新能源、电力
IR
22+
TO-262
6000
十年配单,只做原装
IR
25+
TO-262
178
就找我吧!--邀您体验愉快问购元件!
IR
23+
TO-220AB
8238
INFINOEN
24+
TO-220-3
90000
一级代理进口原装现货、假一罚十价格合理

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