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IRF1404Z价格
参考价格：￥5.1936
型号：IRF1404ZPBF 品牌：International 备注：这里有IRF1404Z多少钱，2025年最近7天走势，今日出价，今日竞价，IRF1404Z批发/采购报价，IRF1404Z行情走势销售排行榜，IRF1404Z报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF1404Z | Advanced Process Technology Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi | IRF |   | |
IRF1404Z | AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature | IRF | | |
IRF1404Z | AUTOMOTIVE MOSFET Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro | KERSEMI | | |
IRF1404Z | N-Channel MOSFET ■ Features ● VDS (V) = 40V ● ID = 75 A (VGS = 10V) ● RDS(ON) | KEXIN 科信电子 | | |
IRF1404Z | Advanced Process Technology 文件：294.32 Kbytes Page：12 Pages | IRF | | |
IRF1404Z | N-Channel MOSFET Transistor 文件：338.47 Kbytes Page：2 Pages | ISC 无锡固电 | | |
IRF1404Z | 40V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装 | Infineon 英飞凌 | | |
AUTOMOTIVE MOSFET Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro | KERSEMI | | ||
Advanced Process Technology Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi | IRF | | ||
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature | IRF | | ||
Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature | IRF | | ||
Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature | IRF | | ||
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature | IRF | | ||
Advanced Process Technology Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi | IRF | | ||
AUTOMOTIVE MOSFET Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro | KERSEMI | | ||
AUTOMOTIVE MOSFET Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro | KERSEMI | | ||
Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature | IRF | | ||
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature | IRF | | ||
Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature | IRF | | ||
HEXFET짰 Power MOSFET 文件：291.97 Kbytes Page：10 Pages | IRF | | ||
Advanced Process Technology 文件：294.32 Kbytes Page：12 Pages | IRF | | ||
Advanced Process Technology 文件：307.88 Kbytes Page：12 Pages | IRF | | ||
Advanced Process Technology | Infineon 英飞凌 | | ||
Advanced Process Technology 文件：307.88 Kbytes Page：12 Pages | IRF | | ||
Advanced Process Technology 文件：307.88 Kbytes Page：12 Pages | IRF | | ||
40V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装 | Infineon 英飞凌 | | ||
Isc N-Channel MOSFET Transistor 文件：299.76 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Advanced Process Technology 文件：294.32 Kbytes Page：12 Pages | IRF | | ||
Advanced Process Technology 文件：307.88 Kbytes Page：12 Pages | IRF | | ||
Advanced Process Technology 文件：294.32 Kbytes Page：12 Pages | IRF | | ||
Primary Standard Capacitor Features: NEW 5 nF and 10 nF now available A national laboratory standard For calibrating working standards Standard for dissipation factor Available in 10, 100 and 1000 pF 20 ppm/year stability, typically better Hermetically sealed in dry nitrogen | IET | | ||
Precision Lab Standard N Connectors Features o Precision Connector - Interface dimensions per MIL-STD-348 Test connector o Rugged Construction - Numerically controlled machining is used to produce high quality uniform parts with controlled concentricity and surface finishes. The result is excellent SWR repeatability. | APITECH | | ||
It looks like a servo 文件：115.89 Kbytes Page：2 Pages | Adafruit | | ||
250A竊?0V N-CHANNEL MOSFET 文件：147.17 Kbytes Page：6 Pages | KIA 可易亚半导体 | | ||
ALUMINUM CHASSIS 文件：109.8 Kbytes Page：1 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |
IRF1404Z产品属性
- 类型
描述
- 型号
IRF1404Z
- 制造商
IRF
- 制造商全称
International Rectifier
- 功能描述
AUTOMOTIVE MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
20+ |
TO-263 |
800 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
INFINEON/英飞凌 |
25+ |
TO-220 |
32000 |
INFINEON/英飞凌全新特价IRF1404ZPBF即刻询购立享优惠#长期有货 |
|||
IR |
24+ |
NA/ |
4050 |
原装现货,当天可交货,原型号开票 |
|||
INFINEON/英飞凌 |
25+ |
TO-220 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
Infineon |
23+ |
NA |
6800 |
原装正品,力挺实单 |
|||
Infineon |
23+ |
TO220 |
15500 |
英飞凌优势渠道全系列在售 |
|||
IR |
2517+ |
TO-220 |
8850 |
只做原装正品现货或订货假一赔十! |
|||
IR |
22+ |
TO220 |
12245 |
现货,原厂原装假一罚十! |
|||
Infineon/英飞凌 |
23+ |
D2PAK |
12700 |
买原装认准中赛美 |
|||
Infineon(英飞凌) |
24+ |
D2PAK |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
IRF1404Z规格书下载地址
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IRF1404Z数据表相关新闻
IRF1404PBF
进口代理
2025-4-2IRF150P221AKMA1
IRF150P221AKMA1
2022-12-1IRF1407PBF
IRF1407PBF
2022-7-22IRF1404ZPBF
深圳市科恒伟业电子有限公司 深圳市福田区华强北振兴路101号华匀大厦2栋5楼516 网站 http://www.kehengweiyedz.cn 网站http://www.kehengweiye.com 邮箱：yulin522@126.com 0755-83200050 15817287769 柯先生
2020-4-18IRA-S210ST01
IRA-S210ST01，全新原装现货当天发货或门市自取0755-82732291.
2020-2-17IRF130CHP1100，IRF1310N，IRF1310NL，IRF1310NS，IRF1404PBF
IRF130CHP1100，IRF1310N，IRF1310NL，IRF1310NS，IRF1404PBF
2020-1-12
DdatasheetPDF页码索引
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