找IC，尽在114IC

芯片资料
  • 芯片资料
  • 丝印反查
  • 库存查询
  • 行业新闻
  • 制造商
  • 替换型号
  • 晶体管

位置：首页 > IC中文资料 > IRF1404Z

IRF1404Z价格

参考价格：￥5.1936

型号：IRF1404ZPBF 品牌：International 备注：这里有IRF1404Z多少钱，2026年最近7天走势，今日出价，今日竞价，IRF1404Z批发/采购报价，IRF1404Z行情走势销售排行榜，IRF1404Z报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF1404Z

Advanced Process Technology

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi

IRF

IRF1404Z

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature

IRF

IRF1404Z

AUTOMOTIVE MOSFET Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

KERSEMI

IRF1404Z

N-Channel MOSFET

■ Features ● VDS (V) = 40V ● ID = 75 A (VGS = 10V) ● RDS(ON)

KEXIN

科信电子

IRF1404Z

40V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装

\n优势:\n• Optimized for broadest availability from distribution partners\n• Product qualification according to JEDEC standard\n• Optimized for 10V gate-drive voltage (called Normal level)\n• Industry standard through-hole power package\n• High-current carrying capability package (upto 195A, die-size ;

INFINEON

英飞凌

IRF1404Z

Advanced Process Technology

文件：294.32 Kbytes Page：12 Pages

IRF

IRF1404Z

N-Channel MOSFET Transistor

文件：338.47 Kbytes Page：2 Pages

ISC

无锡固电

IRF1404ZL

Advanced Process Technology

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi

IRF

IRF1404ZL

AUTOMOTIVE MOSFET Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

KERSEMI

IRF1404ZLPBF

Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature

IRF

IRF1404ZLPBF

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature

IRF

IRF1404ZPBF

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature

IRF

IRF1404ZPBF

Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature

IRF

IRF1404ZS

40V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装

\n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 快速开关\n• 175°C 的工作温度;

INFINEON

英飞凌

IRF1404ZS

AUTOMOTIVE MOSFET Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

KERSEMI

IRF1404ZS

Advanced Process Technology

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi

IRF

IRF1404ZS_L

AUTOMOTIVE MOSFET Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

KERSEMI

IRF1404ZSPBF

Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature

IRF

IRF1404ZSPBF

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature

IRF

IRF1404ZSTRLPBF

Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature

IRF

IRF1404ZGPBF

HEXFET짰 Power MOSFET

文件：291.97 Kbytes Page：10 Pages

IRF

IRF1404ZL

Advanced Process Technology

文件：294.32 Kbytes Page：12 Pages

IRF

IRF1404ZLPBF

Advanced Process Technology

文件：307.88 Kbytes Page：12 Pages

IRF

IRF1404ZLPBF

Advanced Process Technology

INFINEON

英飞凌

IRF1404ZPBF

Advanced Process Technology

文件：307.88 Kbytes Page：12 Pages

IRF

IRF1404ZPBF_15

Advanced Process Technology

文件：307.88 Kbytes Page：12 Pages

IRF

IRF1404ZS

Advanced Process Technology

文件：294.32 Kbytes Page：12 Pages

IRF

IRF1404ZS

Isc N-Channel MOSFET Transistor

文件：299.76 Kbytes Page：2 Pages

ISC

无锡固电

IRF1404ZSPBF

Advanced Process Technology

文件：307.88 Kbytes Page：12 Pages

IRF

IRF1404ZSTRL

Advanced Process Technology

文件：294.32 Kbytes Page：12 Pages

IRF

BA1404

Fm Stereo Transmitter

ROHM

罗姆

BA1404F

Fm Stereo Transmitter

ROHM

罗姆

MC1404

PRECISION LOW DRIFT VOLTAGE REFERENCES

Voltage Reference Family The MC1404 of ICs is a family of temperature–compensated voltage references for precision data conversion applications, such as A/D, D/A, V/F, and F/V. Advances in laser–trimming and ion–implanted devices, as well as monolithic fabrication techniques, make these devices s

ONSEMI

安森美半导体

MMBD1404

SURFACE MOUNT SWITCHING DIODES

Case : SOT-23 Molded Plastic Operating Temperature : -65°C to 150°C

JGD

固锝电子

NTE1404

Integrated Circuit TV Sound IF Amplifier, Detector, AF Output Circuit

Description: The NTE1404 is an integrated circuit in a 16–Lead DIP w/Fin type package designed for use as a TV sound signal processing circuit. Features: • Provides Total TV Sound Signal Processing Circuitry from IF Amplifier through AF Output • DC Volume Control System: Control Volt

NTE

IRF1404Z产品属性

  • 类型

    描述

  • OPN：

    IRF1404ZPBF

  • Qualification：

    Non-Automotive

  • Package name：

    TO220

  • VDS max：

    40 V

  • RDS (on) @10V max：

    3.7 mΩ

  • ID @25°C max：

    180 A

  • QG typ @10V：

    100 nC

  • Polarity：

    N

  • VGS(th) min：

    2 V

  • VGS(th) max：

    4 V

  • VGS(th)：

    3 V

  • Technology：

    IR MOSFET™

IRF1404Z供应商更多...

更新时间：2026-5-13 19:55:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
中天科工半导体（深圳）有限公司
IRF1404ZPBF
INFINEON/英飞凌
25+
TO-220
32000
INFINEON/英飞凌全新特价IRF1404ZPBF即刻询购立享优惠#长期有货
询价
深圳市富利微电子科技有限公司
IRF1404ZPBF
IR
25+
TO-220
11700
保证进口原装现货假一赔十
询价
深圳市粤骏腾电子科技有限公司
IRF1404ZPBF
IR
24+
TO-220
20000
原装正品现货
询价
上海鑫癸子电子科技有限公司
IRF1404Z
Infineon
25+
TO220
15500
英飞凌优势渠道全系列在售
询价
谛辉(北京/上海/青岛 )电子科技有限公司
IRF1404Z
IR
26+
TO-220
890000
一级总代理商原厂原装大批量现货 一站式服务
询价
深圳市昌和盛利电子有限公司
IRF1404Z
IR
26+
TO-220
35890
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
询价
深圳市正迈科技有限公司
IRF1404Z/SL180N04
SLKOR
23+
NA
5879
专业电子元器件供应链正迈科技特价代理特价，原装元器件供应，支持开发样品
询价
深圳市星辰微电科技有限公司
IRF1404Z
Infineon
25+
TO220
15500
英飞凌优势渠道全系列在售
询价
深圳市正纳电子有限公司
IRF1404Z/SL180N04
SLKOR
ROHS+Original
NA
5879
专业电子元器件供应链/QQ 350053121 /正纳电子
询价
深圳市凌旭科技有限公司
IRF1404ZPBF
INFINEON
21+
SMD
16230
十年信誉,只做原装,有挂就有现货!
询价

IRF1404Z芯片相关品牌

IRF1404Z规格书下载地址

IRF1404Z参数引脚图相关

IRF1404Z数据表相关新闻

DdatasheetPDF页码索引

新数据|IC资料索引|IC关键词|IC库存|IC中文资料|关于我们|联系我们

Copyright © 2003-2026 www.114ic.cn All Rights Reserved 网站备案: 粤ICP备05011613号 粤公网安备 44030402000933号

声明：本站所有资料均来自互联网及网友提供，仅供学习和研究使用，无任何商业目的，版权归原作如有侵权请联系QQ：303638005，本站马上更正

字母索引：ABCDEFGHIJKLMNOPQRSTUVWXYZ0123456789

深圳市市场监督管理局企业主体身份公示