IRF1404Z价格

参考价格:¥5.1936

型号:IRF1404ZPBF 品牌:International 备注:这里有IRF1404Z多少钱,2025年最近7天走势,今日出价,今日竞价,IRF1404Z批发/采购报价,IRF1404Z行情走势销售排行榜,IRF1404Z报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRF1404Z

Advanced Process Technology

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi

IRF

International Rectifier

IRF
IRF1404Z

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature

IRF

International Rectifier

IRF
IRF1404Z

AUTOMOTIVE MOSFET Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
IRF1404Z

N-Channel MOSFET

■ Features ● VDS (V) = 40V ● ID = 75 A (VGS = 10V) ● RDS(ON)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
IRF1404Z

Advanced Process Technology

文件:294.32 Kbytes Page:12 Pages

IRF

International Rectifier

IRF
IRF1404Z

N-Channel MOSFET Transistor

文件:338.47 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

AUTOMOTIVE MOSFET Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

Advanced Process Technology

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi

IRF

International Rectifier

IRF

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature

IRF

International Rectifier

IRF

Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature

IRF

International Rectifier

IRF

Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature

IRF

International Rectifier

IRF

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature

IRF

International Rectifier

IRF

Advanced Process Technology

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi

IRF

International Rectifier

IRF

AUTOMOTIVE MOSFET Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

AUTOMOTIVE MOSFET Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature

IRF

International Rectifier

IRF

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature

IRF

International Rectifier

IRF

Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature

IRF

International Rectifier

IRF

HEXFET짰 Power MOSFET

文件:291.97 Kbytes Page:10 Pages

IRF

International Rectifier

IRF

Advanced Process Technology

文件:294.32 Kbytes Page:12 Pages

IRF

International Rectifier

IRF

Advanced Process Technology

文件:307.88 Kbytes Page:12 Pages

IRF

International Rectifier

IRF

Advanced Process Technology

文件:307.88 Kbytes Page:12 Pages

IRF

International Rectifier

IRF

Advanced Process Technology

文件:307.88 Kbytes Page:12 Pages

IRF

International Rectifier

IRF

Isc N-Channel MOSFET Transistor

文件:299.76 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

Advanced Process Technology

文件:294.32 Kbytes Page:12 Pages

IRF

International Rectifier

IRF

Advanced Process Technology

文件:307.88 Kbytes Page:12 Pages

IRF

International Rectifier

IRF

Advanced Process Technology

文件:294.32 Kbytes Page:12 Pages

IRF

International Rectifier

IRF

Primary Standard Capacitor

Features: NEW 5 nF and 10 nF now available A national laboratory standard For calibrating working standards Standard for dissipation factor Available in 10, 100 and 1000 pF 20 ppm/year stability, typically better Hermetically sealed in dry nitrogen

IET

IET Labs Inc.

IET

Precision Lab Standard N Connectors

Features o Precision Connector - Interface dimensions per MIL-STD-348 Test connector o Rugged Construction - Numerically controlled machining is used to produce high quality uniform parts with controlled concentricity and surface finishes. The result is excellent SWR repeatability.

APITECH

API Technologies Corp

APITECH

250A竊?0V N-CHANNEL MOSFET

文件:147.17 Kbytes Page:6 Pages

KIAKIA Semiconductor Technology

可易亚半导体广东可易亚半导体科技有限公司

KIA

ALUMINUM CHASSIS

文件:109.8 Kbytes Page:1 Pages

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etc未分类制造商etc2未分类制造商

etc2

2??Max On Resistance, 짹15 V/12 V/짹5 V 4:1 iCMOS??Multiplexer

文件:252.96 Kbytes Page:17 Pages

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD

IRF1404Z产品属性

  • 类型

    描述

  • 型号

    IRF1404Z

  • 制造商

    IRF

  • 制造商全称

    International Rectifier

  • 功能描述

    AUTOMOTIVE MOSFET

更新时间:2025-8-5 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
NA/
4050
原装现货,当天可交货,原型号开票
INFINEON/英飞凌
25+
TO-220
54648
百分百原装现货 实单必成 欢迎询价
Infineon(英飞凌)
2511
D2PAK
4945
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
Infineon
23+
TO220
15500
英飞凌优势渠道全系列在售
Infineon/英飞凌
23+
D2PAK
12700
买原装认准中赛美
IR
20+
TO-263
800
一级代理,专注军工、汽车、医疗、工业、新能源、电力
Infineon(英飞凌)
2024+
TO-220
500000
诚信服务,绝对原装原盘
INFINEON/英飞凌
2021+
45000
十年专营原装现货,假一赔十
SLKOR
23+
NA
5879
专业电子元器件供应链正迈科技特价代理特价,原装元器件供应,支持开发样品
IR
1822+
TO263
9852
只做原装正品假一赔十为客户做到零风险!!

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