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IRF1404Z价格
参考价格:¥5.1936
型号:IRF1404ZPBF 品牌:International 备注:这里有IRF1404Z多少钱,2025年最近7天走势,今日出价,今日竞价,IRF1404Z批发/采购报价,IRF1404Z行情走势销售排行榜,IRF1404Z报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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IRF1404Z | Advanced Process Technology Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi | IRF International Rectifier | ||
IRF1404Z | AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature | IRF International Rectifier | ||
IRF1404Z | AUTOMOTIVE MOSFET Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro | KERSEMI Kersemi Electronic Co., Ltd. | ||
IRF1404Z | N-Channel MOSFET ■ Features ● VDS (V) = 40V ● ID = 75 A (VGS = 10V) ● RDS(ON) | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | ||
IRF1404Z | Advanced Process Technology 文件:294.32 Kbytes Page:12 Pages | IRF International Rectifier | ||
IRF1404Z | N-Channel MOSFET Transistor 文件:338.47 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
AUTOMOTIVE MOSFET Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro | KERSEMI Kersemi Electronic Co., Ltd. | |||
Advanced Process Technology Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi | IRF International Rectifier | |||
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature | IRF International Rectifier | |||
Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature | IRF International Rectifier | |||
Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature | IRF International Rectifier | |||
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature | IRF International Rectifier | |||
Advanced Process Technology Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi | IRF International Rectifier | |||
AUTOMOTIVE MOSFET Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro | KERSEMI Kersemi Electronic Co., Ltd. | |||
AUTOMOTIVE MOSFET Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro | KERSEMI Kersemi Electronic Co., Ltd. | |||
Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature | IRF International Rectifier | |||
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature | IRF International Rectifier | |||
Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature | IRF International Rectifier | |||
HEXFET짰 Power MOSFET 文件:291.97 Kbytes Page:10 Pages | IRF International Rectifier | |||
Advanced Process Technology 文件:294.32 Kbytes Page:12 Pages | IRF International Rectifier | |||
Advanced Process Technology 文件:307.88 Kbytes Page:12 Pages | IRF International Rectifier | |||
Advanced Process Technology 文件:307.88 Kbytes Page:12 Pages | IRF International Rectifier | |||
Advanced Process Technology 文件:307.88 Kbytes Page:12 Pages | IRF International Rectifier | |||
Isc N-Channel MOSFET Transistor 文件:299.76 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
Advanced Process Technology 文件:294.32 Kbytes Page:12 Pages | IRF International Rectifier | |||
Advanced Process Technology 文件:307.88 Kbytes Page:12 Pages | IRF International Rectifier | |||
Advanced Process Technology 文件:294.32 Kbytes Page:12 Pages | IRF International Rectifier | |||
Primary Standard Capacitor Features: NEW 5 nF and 10 nF now available A national laboratory standard For calibrating working standards Standard for dissipation factor Available in 10, 100 and 1000 pF 20 ppm/year stability, typically better Hermetically sealed in dry nitrogen | IET IET Labs Inc. | |||
Precision Lab Standard N Connectors Features o Precision Connector - Interface dimensions per MIL-STD-348 Test connector o Rugged Construction - Numerically controlled machining is used to produce high quality uniform parts with controlled concentricity and surface finishes. The result is excellent SWR repeatability. | APITECH API Technologies Corp | |||
250A竊?0V N-CHANNEL MOSFET 文件:147.17 Kbytes Page:6 Pages | KIAKIA Semiconductor Technology 可易亚半导体广东可易亚半导体科技有限公司 | |||
ALUMINUM CHASSIS 文件:109.8 Kbytes Page:1 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | |||
2??Max On Resistance, 짹15 V/12 V/짹5 V 4:1 iCMOS??Multiplexer 文件:252.96 Kbytes Page:17 Pages | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 |
IRF1404Z产品属性
- 类型
描述
- 型号
IRF1404Z
- 制造商
IRF
- 制造商全称
International Rectifier
- 功能描述
AUTOMOTIVE MOSFET
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
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IR |
24+ |
NA/ |
4050 |
原装现货,当天可交货,原型号开票 |
|||
INFINEON/英飞凌 |
25+ |
TO-220 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
Infineon(英飞凌) |
2511 |
D2PAK |
4945 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
Infineon |
23+ |
TO220 |
15500 |
英飞凌优势渠道全系列在售 |
|||
Infineon/英飞凌 |
23+ |
D2PAK |
12700 |
买原装认准中赛美 |
|||
IR |
20+ |
TO-263 |
800 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Infineon(英飞凌) |
2024+ |
TO-220 |
500000 |
诚信服务,绝对原装原盘 |
|||
INFINEON/英飞凌 |
2021+ |
45000 |
十年专营原装现货,假一赔十 |
||||
SLKOR |
23+ |
NA |
5879 |
专业电子元器件供应链正迈科技特价代理特价,原装元器件供应,支持开发样品 |
|||
IR |
1822+ |
TO263 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
IRF1404Z规格书下载地址
IRF1404Z参数引脚图相关
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- IRF140
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- IRF1324
- IRF132
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- IRF1310NSTRLPBF/BKN
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- IRF1310NPBF
- IRF131
- IRF1302
- IRF130
- IRF123
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- IRF1018ESTRLPBF-CUTTAPE
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- IRF1018ESPBF
- IRF1018ESLPBF
- IRF1018EPBF
- IRF1010
- IRF101
- IRF100
- IRF-1
- IRF054
- IRF044
IRF1404Z数据表相关新闻
IRF1404PBF
进口代理
2025-4-2IRF150P221AKMA1
IRF150P221AKMA1
2022-12-1IRF1407PBF
IRF1407PBF
2022-7-22IRF1404ZPBF
深圳市科恒伟业电子有限公司 深圳市福田区华强北振兴路101号华匀大厦2栋5楼516 网站 http://www.kehengweiyedz.cn 网站http://www.kehengweiye.com 邮箱:yulin522@126.com 0755-83200050 15817287769 柯先生
2020-4-18IRA-S210ST01
IRA-S210ST01,全新原装现货当天发货或门市自取0755-82732291.
2020-2-17IRF130CHP1100,IRF1310N,IRF1310NL,IRF1310NS,IRF1404PBF
IRF130CHP1100,IRF1310N,IRF1310NL,IRF1310NS,IRF1404PBF
2020-1-12
DdatasheetPDF页码索引
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