IRF1404Z价格

参考价格:¥5.1936

型号:IRF1404ZPBF 品牌:International 备注:这里有IRF1404Z多少钱,2025年最近7天走势,今日出价,今日竞价,IRF1404Z批发/采购报价,IRF1404Z行情走势销售排行榜,IRF1404Z报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF1404Z

Advanced Process Technology

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi

IRF

IRF1404Z

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature

IRF

IRF1404Z

N-Channel MOSFET

■ Features ● VDS (V) = 40V ● ID = 75 A (VGS = 10V) ● RDS(ON)

KEXIN

科信电子

IRF1404Z

AUTOMOTIVE MOSFET Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

KERSEMI

IRF1404Z

40V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装

Infineon

英飞凌

IRF1404Z

N-Channel MOSFET Transistor

文件:338.47 Kbytes Page:2 Pages

ISC

无锡固电

IRF1404Z

Advanced Process Technology

文件:294.32 Kbytes Page:12 Pages

IRF

Advanced Process Technology

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi

IRF

AUTOMOTIVE MOSFET Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

KERSEMI

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature

IRF

Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature

IRF

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature

IRF

Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature

IRF

AUTOMOTIVE MOSFET Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

KERSEMI

Advanced Process Technology

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi

IRF

AUTOMOTIVE MOSFET Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

KERSEMI

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature

IRF

Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature

IRF

Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature

IRF

HEXFET짰 Power MOSFET

文件:291.97 Kbytes Page:10 Pages

IRF

Advanced Process Technology

文件:294.32 Kbytes Page:12 Pages

IRF

Advanced Process Technology

文件:307.88 Kbytes Page:12 Pages

IRF

Advanced Process Technology

Infineon

英飞凌

Advanced Process Technology

文件:307.88 Kbytes Page:12 Pages

IRF

Advanced Process Technology

文件:307.88 Kbytes Page:12 Pages

IRF

Advanced Process Technology

文件:294.32 Kbytes Page:12 Pages

IRF

Isc N-Channel MOSFET Transistor

文件:299.76 Kbytes Page:2 Pages

ISC

无锡固电

40V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装

Infineon

英飞凌

Advanced Process Technology

文件:307.88 Kbytes Page:12 Pages

IRF

Advanced Process Technology

文件:294.32 Kbytes Page:12 Pages

IRF

Primary Standard Capacitor

Features: NEW 5 nF and 10 nF now available A national laboratory standard For calibrating working standards Standard for dissipation factor Available in 10, 100 and 1000 pF 20 ppm/year stability, typically better Hermetically sealed in dry nitrogen

IET

Precision Lab Standard N Connectors

Features o Precision Connector - Interface dimensions per MIL-STD-348 Test connector o Rugged Construction - Numerically controlled machining is used to produce high quality uniform parts with controlled concentricity and surface finishes. The result is excellent SWR repeatability.

APITECH

It looks like a servo

文件:115.89 Kbytes Page:2 Pages

Adafruit

250A竊?0V N-CHANNEL MOSFET

文件:147.17 Kbytes Page:6 Pages

KIA

可易亚半导体

ALUMINUM CHASSIS

文件:109.8 Kbytes Page:1 Pages

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IRF1404Z产品属性

  • 类型

    描述

  • 型号

    IRF1404Z

  • 制造商

    IRF

  • 制造商全称

    International Rectifier

  • 功能描述

    AUTOMOTIVE MOSFET

更新时间:2025-9-26 17:19:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Infineon
23+
NA
6800
原装正品,力挺实单
Infineon/英飞凌
25+
原厂封装
10280
原厂授权代理,专注军工、汽车、医疗、工业、新能源!
IR
22+
TO220
12245
现货,原厂原装假一罚十!
IR
23+
TO-220AB
8238
INTERNATIONALRECTIFIER
25+
NA
880000
明嘉莱只做原装正品现货
IR
21+
TO-263
30000
百域芯优势 实单必成 可开13点增值税
ir
23+
NA
2026
专做原装正品,假一罚百!
IR
24+
TO-220
5990
只做原装正品现货 欢迎来电查询15919825718
IR
2517+
TO-220
8850
只做原装正品现货或订货假一赔十!
INFINEON/英飞凌
23+
NA
5000
只有原装,欢迎来电咨询!

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