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位置：首页 > IC中文资料第1748页 > IRF1405Z

IRF1405Z价格

参考价格：￥13.6798

型号：IRF1405ZL-7PPBF 品牌：International 备注：这里有IRF1405Z多少钱，2025年最近7天走势，今日出价，今日竞价，IRF1405Z批发/采购报价，IRF1405Z行情走势销售排行榜，IRF1405Z报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF1405Z

AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 4.9mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temp

IRF

IRF1405Z

N-Channel MOSFET Transistor

文件：338.82 Kbytes Page：2 Pages

ISC

无锡固电

IRF1405Z

采用 TO-220 封装的 55V 单 N 沟道功率 MOSFET

Infineon

英飞凌

IRF1405ZL

AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 4.9mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temp

IRF

IRF1405ZL-7P

AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 4.9mΩ ID = 120A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating tem

IRF

IRF1405ZL-7PPBF

HEXFET짰 Power MOSFET ( VDSS = 55V , RDS(on) = 4.9m廓 , ID = 120A )

VDSS = 55V RDS(on) = 4.9mΩ ID = 120A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating tem

IRF

IRF1405ZLPBF

AUTOMOTIVE MOSFET ( VDSS = 55V , RDS(on) = 4.9m廓 , ID = 75A )

VDSS = 55V RDS(on) = 4.9mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temp

IRF

IRF1405ZPBF

AUTOMOTIVE MOSFET ( VDSS = 55V , RDS(on) = 4.9m廓 , ID = 75A )

VDSS = 55V RDS(on) = 4.9mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temp

IRF

IRF1405ZS

AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 4.9mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temp

IRF

IRF1405ZS-7P

AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 4.9mΩ ID = 120A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating tem

IRF

IRF1405ZS-7PPBF

HEXFET짰 Power MOSFET ( VDSS = 55V , RDS(on) = 4.9m廓 , ID = 120A )

VDSS = 55V RDS(on) = 4.9mΩ ID = 120A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating tem

IRF

IRF1405ZSPBF

AUTOMOTIVE MOSFET ( VDSS = 55V , RDS(on) = 4.9m廓 , ID = 75A )

VDSS = 55V RDS(on) = 4.9mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temp

IRF

IRF1405ZL-7P

AUTOMOTIVE MOSFET

Infineon

英飞凌

IRF1405ZPBF

Advanced Process Technology

文件：401.85 Kbytes Page：12 Pages

IRF

IRF1405ZPBF..

Advanced Process Technology

文件：401.85 Kbytes Page：12 Pages

IRF

IRF1405ZPBF_15

Advanced Process Technology

文件：401.85 Kbytes Page：12 Pages

IRF

IRF1405ZS

采用 D2-Pak 封装的 55V 单 N 通道 HEXFET 功率 MOSFET

Infineon

英飞凌

IRF1405ZS

Isc N-Channel MOSFET Transistor

文件：299.72 Kbytes Page：2 Pages

ISC

无锡固电

A1405

ACTIVE (DIGITAL) DELAY LINES

[RCD] Wide selection of sizes! RCD’s digital delay lines have been designed to provide precise tap delays with all the necessary drive and pick-off circuitry. All inputs and outputs are schottky-type and require no additional components to achieve specified delays. Encapsulated/molded constructi

ETCList of Unclassifed Manufacturers

未分类制造商

A1405

AC Film Capacitors Lighting

Features ■ Self-healing properties ■ Low dissipation factor ■ High insulation resisitance Construction ■ Dielectric: polypropylene film ■ Aluminium can ■ Soft polyurethan resin ■ Internal dischage resistor ■ Overpressure disconnector Typical applications For general sine wave applicat

EPCOS

爱普科斯

AAT1405

Four-Channel LED Backlight Driver with Integrated Boost and High Frequency Direct PWM Dimming

Features • VIN Range: 4.5V to 5.5V / 5.0V to 26.0V • LX Rated to 50V • Maximum IOUT: 120mA • Up to 92 Efficiency • High Efficiency Light-Load Mode • 4 LED Current Sinks up to 30mA/each ▪ ±2 Accuracy (21mA) ▪ ±2 Matching (21mA) • Flexible Configurations ▪ Disable or Parallel • Switching

SKYWORKS

思佳讯

1405XBALYW

Analog Multiplexers/Demultiplexers

文件：169.98 Kbytes Page：12 Pages

ONSEMI

安森美半导体

1405XBGAWLYWW

Analog Multiplexers/Demultiplexers

文件：169.98 Kbytes Page：12 Pages

ONSEMI

安森美半导体

IRF1405Z产品属性

  • 类型

    描述

  • 型号

    IRF1405Z

  • 功能描述

    MOSFET N-CH 55V 75A TO-220AB

  • RoHS

    否

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • 型

    MOSFET N 通道，金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds（最大）@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A，10V Id 时的

  • Vgs(th)（最大）

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

IRF1405Z供应商更多...

更新时间：2025-12-13 8:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市晨豪科技有限公司
IRF1405ZF
INFINEON/英飞凌
23+
TO-263
89630
当天发货全新原装现货
询价
深圳市金芯世纪电子有限公司
IRF1405ZSTRLPBF
INFINEON
100000
代理渠道/只做原装/可含税
询价
深圳市弘为电子有限公司
IRF1405Z
IR
24+
原厂封装
2000
原装现货假一罚十
询价
深圳市华来深电子有限公司
IRF1405Z
IR
23+
TO-220-3
11846
一级代理商现货批发,原装正品,假一罚十
询价
深圳市亿智腾科技有限公司
IRF1405Z
Infineon Technologies
24+
原装
5000
原装正品,提供BOM配单服务
询价
深圳市得捷芯城科技有限公司
IRF1405Z
IR
24+
NA/
200
优势代理渠道,原装正品,可全系列订货开增值税票
询价
中天科工半导体（深圳）有限公司
IRF1405Z
IR
20+
TO-220
38900
原装优势主营型号-可开原型号增税票
询价
深圳市赛尔通科技有限公司
IRF1405ZPBF
IR
23+
TO-220
65400
询价
深圳市昌和盛利电子有限公司
IRF1405Z
IR
NEW
TO-220
35890
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
询价
深圳市佳鑫美电子科技有限公司
IRF1405ZF
IR
25+
SOT-263
2987
只售原装自家现货!诚信经营!欢迎来电!
询价

IRF1405Z芯片相关品牌

IRF1405Z规格书下载地址

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IRF1405Z数据表相关新闻

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