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IRF1404价格

参考价格：￥7.2251

型号：IRF1404LPBF 品牌：INTERNATIONAL 备注：这里有IRF1404多少钱，2025年最近7天走势，今日出价，今日竞价，IRF1404批发/采购报价，IRF1404行情走势销售排行榜，IRF1404报价。

型号	功能描述	生产厂家&企业
IRF1404	AdvancedProcessTechnologyUltraLowOn-Resistance Description SeventhGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn	KERSEMI Kersemi Electronic Co., Ltd.
IRF1404	iscN-ChannelMosfetTransistor Description SeventhGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellk	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
IRF1404	PowerMOSFET(Vdss=40V,Rds(on)=0.004ohm,Id=162A?? Description SeventhGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn	IRF International Rectifier
IRF1404L	PowerMOSFET(Vdss=40V,Rds(on)=0.004ohm,Id=162A?? Description SeventhGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessing techniquestoachieveextremelylowon-resistancepersiliconarea. lAdvancedProcessTechnology lUltraLowOn-Resistance lDynamicdv/dtRating l175°COperatingTemp	IRF International Rectifier
IRF1404L	UltraLowOn-Resistance Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleonresistanceinanyexistingsurfacemountpackage. lAdvancedProcessTechnology lUltraLowOn-Resistance lDynam	KERSEMI Kersemi Electronic Co., Ltd.
IRF1404LPbF	HEXFET짰PowerMOSFET Description SeventhGenerationHEXFETÆPowerMOSFETsfromInternationalRectifierutilizeadvancedprocessing techniquestoachieveextremelylowon-resistancepersiliconarea. AdvancedProcessTechnology UltraLowOn-Resistance Dynamicdv/dtRating 175°COperatingTemperat	IRF International Rectifier
IRF1404LPBF	HEXFET짰PowerMOSFET Description SeventhGenerationHEXFETÆPowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea. AdvancedProcessTechnology UltraLowOn-Resistance Dynamicdv/dtRating 175°COperatingTemperature	KERSEMI Kersemi Electronic Co., Ltd.
IRF1404LPBF	AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea. Features AdvancedProcessTechnology UltraLowOn-Resistance 175°COperatingTemperature	IRF International Rectifier
IRF1404PBF	AdvancedProcessTechnology Description SeventhGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn	KERSEMI Kersemi Electronic Co., Ltd.
IRF1404PBF	HEXFET짰PowerMOSFET Description SeventhGenerationHEXFETPowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellk	IRF International Rectifier
IRF1404S	PowerMOSFET(Vdss=40V,Rds(on)=0.004ohm,Id=162A?? Description SeventhGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessing techniquestoachieveextremelylowon-resistancepersiliconarea. lAdvancedProcessTechnology lUltraLowOn-Resistance lDynamicdv/dtRating l175°COperatingTemp	IRF International Rectifier
IRF1404S	UltraLowOn-Resistance Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleonresistanceinanyexistingsurfacemountpackage. lAdvancedProcessTechnology lUltraLowOn-Resistance lDynam	KERSEMI Kersemi Electronic Co., Ltd.
IRF1404S	AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea. Features AdvancedProcessTechnology UltraLowOn-Resistance 175°COperatingTemperature	IRF International Rectifier
IRF1404SPBF	HEXFET짰PowerMOSFET Description SeventhGenerationHEXFETÆPowerMOSFETsfromInternationalRectifierutilizeadvancedprocessing techniquestoachieveextremelylowon-resistancepersiliconarea. AdvancedProcessTechnology UltraLowOn-Resistance Dynamicdv/dtRating 175°COperatingTemperat	IRF International Rectifier
IRF1404SPBF	HEXFET짰PowerMOSFET Description SeventhGenerationHEXFETÆPowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea. AdvancedProcessTechnology UltraLowOn-Resistance Dynamicdv/dtRating 175°COperatingTemperature	KERSEMI Kersemi Electronic Co., Ltd.
IRF1404STRLPBF	AdvancedProcessTechnology Description SeventhGenerationHEXFETÆPowerMOSFETsfromInternationalRectifierutilizeadvancedprocessing techniquestoachieveextremelylowon-resistancepersiliconarea. AdvancedProcessTechnology UltraLowOn-Resistance Dynamicdv/dtRating 175°COperatingTemperat	IRF International Rectifier
IRF1404Z	AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea. Features AdvancedProcessTechnology UltraLowOn-Resistance 175°COperatingTemperature	IRF International Rectifier
IRF1404Z	AdvancedProcessTechnology Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi	IRF International Rectifier
IRF1404Z	AUTOMOTIVEMOSFETAdvancedProcessTechnology Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro	KERSEMI Kersemi Electronic Co., Ltd.
IRF1404Z	N-ChannelMOSFET ■Features ●VDS(V)=40V ●ID=75A(VGS=10V) ●RDS(ON)	KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司
IRF1404ZL	AUTOMOTIVEMOSFETAdvancedProcessTechnology Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro	KERSEMI Kersemi Electronic Co., Ltd.
IRF1404ZL	AdvancedProcessTechnology Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi	IRF International Rectifier
IRF1404ZLPBF	AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea. Features AdvancedProcessTechnology UltraLowOn-Resistance 175°COperatingTemperature	IRF International Rectifier
IRF1404ZLPBF	AdvancedProcessTechnology Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea. Features AdvancedProcessTechnology UltraLowOn-Resistance 175°COperatingTemperature	IRF International Rectifier
IRF1404ZPBF	AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea. Features AdvancedProcessTechnology UltraLowOn-Resistance 175°COperatingTemperature	IRF International Rectifier
IRF1404ZPBF	AdvancedProcessTechnology Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea. Features AdvancedProcessTechnology UltraLowOn-Resistance 175°COperatingTemperature	IRF International Rectifier
IRF1404ZS	AdvancedProcessTechnology Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi	IRF International Rectifier
IRF1404ZS	AUTOMOTIVEMOSFETAdvancedProcessTechnology Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro	KERSEMI Kersemi Electronic Co., Ltd.
IRF1404ZS_L	AUTOMOTIVEMOSFETAdvancedProcessTechnology Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro	KERSEMI Kersemi Electronic Co., Ltd.
IRF1404ZSPBF	AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea. Features AdvancedProcessTechnology UltraLowOn-Resistance 175°COperatingTemperature	IRF International Rectifier
IRF1404ZSPBF	AdvancedProcessTechnology Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea. Features AdvancedProcessTechnology UltraLowOn-Resistance 175°COperatingTemperature	IRF International Rectifier
IRF1404ZSTRLPBF	AdvancedProcessTechnology Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea. Features AdvancedProcessTechnology UltraLowOn-Resistance 175°COperatingTemperature	IRF International Rectifier
IRF1404_18	N-ChannelMOSFETTransistor 文件：338.61 Kbytes Page：2 Pages	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
IRF1404LPBF	AdvancedProcessTechnology 文件：279.7 Kbytes Page：11 Pages	IRF International Rectifier
IRF1404PBF	AdvancedProcessTechnology 文件：214.2 Kbytes Page：9 Pages	IRF International Rectifier
IRF1404PBF_15	AdvancedProcessTechnology 文件：214.2 Kbytes Page：9 Pages	IRF International Rectifier
IRF1404S	iscN-ChannelMOSFETTransistor 文件：263.14 Kbytes Page：2 Pages	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
IRF1404SPBF	AdvancedProcessTechnology 文件：279.7 Kbytes Page：11 Pages	IRF International Rectifier
IRF1404SPBF_15	AdvancedProcessTechnology 文件：279.7 Kbytes Page：11 Pages	IRF International Rectifier
IRF1404Z	AdvancedProcessTechnology 文件：294.32 Kbytes Page：12 Pages	IRF International Rectifier
IRF1404Z	N-ChannelMOSFETTransistor 文件：338.47 Kbytes Page：2 Pages	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
IRF1404ZGPBF	HEXFET짰PowerMOSFET 文件：291.97 Kbytes Page：10 Pages	IRF International Rectifier
IRF1404ZL	AdvancedProcessTechnology 文件：294.32 Kbytes Page：12 Pages	IRF International Rectifier
IRF1404ZLPBF	AdvancedProcessTechnology 文件：307.88 Kbytes Page：12 Pages	IRF International Rectifier
IRF1404ZPBF	AdvancedProcessTechnology 文件：307.88 Kbytes Page：12 Pages	IRF International Rectifier
IRF1404ZPBF_15	AdvancedProcessTechnology 文件：307.88 Kbytes Page：12 Pages	IRF International Rectifier
IRF1404ZS	AdvancedProcessTechnology 文件：294.32 Kbytes Page：12 Pages	IRF International Rectifier
IRF1404ZS	IscN-ChannelMOSFETTransistor 文件：299.76 Kbytes Page：2 Pages	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
IRF1404ZSPBF	AdvancedProcessTechnology 文件：307.88 Kbytes Page：12 Pages	IRF International Rectifier
IRF1404ZSTRL	AdvancedProcessTechnology 文件：294.32 Kbytes Page：12 Pages	IRF International Rectifier
1404	PrimaryStandardCapacitor Features: NEW5nFand10nFnowavailable Anationallaboratorystandard Forcalibratingworkingstandards Standardfordissipationfactor Availablein10,100and1000pF 20ppm/yearstability,typicallybetter Hermeticallysealedindrynitrogen	IET IET Labs Inc.
1404N	PrecisionLabStandardNConnectors Features oPrecisionConnector-InterfacedimensionsperMIL-STD-348Testconnector oRuggedConstruction-Numericallycontrolledmachiningisusedtoproducehighqualityuniformpartswithcontrolledconcentricityandsurfacefinishes.TheresultisexcellentSWRrepeatability.	APITECH API Technologies Corp
1404A	250A竊?0VN-CHANNELMOSFET 文件：147.17 Kbytes Page：6 Pages	KIAKIA Semiconductor Technology 可易亚半导体广东可易亚半导体科技有限公司
AC-1404	ALUMINUMCHASSIS 文件：109.8 Kbytes Page：1 Pages	etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商
ADG1404	2??MaxOnResistance,짹15V/12V/짹5V4:1iCMOS??Multiplexer 文件：252.96 Kbytes Page：17 Pages	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司

IRF1404产品属性

类型
描述
型号
IRF1404
功能描述
MOSFET MOSFET, 40V, 162A, 4 mOhm, 160 nC Qg, TO-220AB
RoHS
否
制造商
STMicroelectronics
晶体管极性
N-Channel
汲极/源极击穿电压
650 V
闸/源击穿电压
25 V
漏极连续电流
130 A 电阻汲极/源极
RDS（导通）
0.014 Ohms
配置
Single
安装风格
Through Hole
封装/箱体
Max247
封装
Tube

IRF1404供应商更多...

更新时间：2025-7-31 23:01:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市纳立科技有限公司	IRF1404PBF		三年内		1983	只做原装正品	询价
深圳市得捷芯城科技有限公司	IRF1404ZSTRRPBF	IR	24+	NA/	4050	原装现货,当天可交货,原型号开票	询价
深圳市高捷芯城科技有限公司	IRF1404ZSTRLPBF	Infineon(英飞凌)	24+	D2PAK	7350	现货供应,当天可交货!免费送样,原厂技术支持!!!	询价
深圳市创盛芯科技有限公司	IRF1404ZSMOS(场效应管)	IR	24+	TO-263	45000	原装现货假一赔十	询价
上海意淼电子科技有限公司	IRF1404PBF	INFINEON	23+	K-B	1000	只有原装,请来电咨询	询价
深圳市纳艾斯科技有限公司	IRF1404ZPBF	IR	24+	TO-220	80000	只做自己库存全新原装进口正品假一赔百可开13%增	询价
深圳市中赛美电子科技有限公司	IRF1404STRRPBF	Infineon/英飞凌	23+	D2PAK	12700	买原装认准中赛美	询价
深圳市恒凯威科技开发有限公司	IRF1404STRRPBF	Infineon/英飞凌	21+	D2PAK	6820	只做原装,质量保证	询价
深圳市金芯世纪电子有限公司	IRF1404L	IR/VISHAY	22+	TO-262	100000	代理渠道/只做原装/可含税	询价
深圳市科芯源微电子有限公司	IRF1404ZPBF	INFINEON/英飞凌	25+	TO-220	54648	百分百原装现货实单必成欢迎询价	询价

IRF1404芯片相关品牌

IRF1404规格书下载地址

IRF1404参数引脚图相关

IRF1404数据表相关新闻

IRF1404PBF
进口代理
2025-4-2
IRF1407PBF
IRF1407PBF
2022-7-22
IRF1404ZPBF
深圳市科恒伟业电子有限公司深圳市福田区华强北振兴路101号华匀大厦2栋5楼516网站http://www.kehengweiyedz.cn网站http://www.kehengweiye.com邮箱：yulin522@126.com0755-8320005015817287769柯先生
2020-4-18
IRA-S210ST01
IRA-S210ST01，全新原装现货当天发货或门市自取0755-82732291.
2020-2-17
IRF130CHP1100，IRF1310N，IRF1310NL，IRF1310NS，IRF1404PBF
IRF130CHP1100，IRF1310N，IRF1310NL，IRF1310NS，IRF1404PBF
2020-1-12
IR51H224-自激式半桥
特点·输出功率MOSFET在半桥配置·高侧栅极驱动器引导操作设计·自举二极管集成包（HD型）·精确的定时控制两个功率MOSFET匹配延迟获得50％的占空比匹配死区的1.2us·内部振荡器具有可编程的频率·15.6V齐纳钳位VCC的离线运行的半桥式输出是用RT淘汰·微功率启动说明该IR51H（四）XXX是完整的高电压，高转速，selfoscillating半桥电路.专有的HVIC和闩锁免疫CMOS技术，随着的HEXFET®功率MOSFET技术，使
2013-2-8

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IRF1404价格

IRF1404产品属性

IRF1404供应商更多...

IRF1404芯片相关品牌

IRF1404规格书下载地址

IRF1404参数引脚图相关

IRF1404数据表相关新闻

IRF1404PBF

IRF1407PBF

IRF1404ZPBF

IRA-S210ST01

IRF130CHP1100，IRF1310N，IRF1310NL，IRF1310NS，IRF1404PBF

IR51H224-自激式半桥

DdatasheetPDF页码索引