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IRF1404价格
参考价格：￥7.2251
型号：IRF1404LPBF 品牌：INTERNATIONAL 备注：这里有IRF1404多少钱，2026年最近7天走势，今日出价，今日竞价，IRF1404批发/采购报价，IRF1404行情走势销售排行榜，IRF1404报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF1404 | Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A?? Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn | IRF |   | |
IRF1404 | isc N-Channel Mosfet Transistor Description Seventh Generation HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well k | ISC 无锡固电 | | |
IRF1404 | Advanced Process Technology Ultra Low On-Resistance Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn | KERSEMI | | |
IRF1404 | Super trench MOSFET | JINGHENG 晶恒 | | |
IRF1404 | 采用 TO-220 封装的 40V 单 N 沟道功率 MOSFET | INFINEON 英飞凌 | | |
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A?? Description Seventh Generation HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temp | IRF | | ||
Ultra Low On-Resistance Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. l Advanced Process Technology l Ultra Low On-Resistance l Dynam | KERSEMI | | ||
HEXFET짰 Power MOSFET Description Seventh Generation HEXFETÆPower MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature | KERSEMI | | ||
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature | IRF | | ||
HEXFET짰 Power MOSFET Description Seventh Generation HEXFETÆPower MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperat | IRF | | ||
HEXFET짰 Power MOSFET Description Seventh Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well k | IRF | | ||
Advanced Process Technology Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn | KERSEMI | | ||
Ultra Low On-Resistance Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. l Advanced Process Technology l Ultra Low On-Resistance l Dynam | KERSEMI | | ||
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature | IRF | | ||
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A?? Description Seventh Generation HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temp | IRF | | ||
HEXFET짰 Power MOSFET Description Seventh Generation HEXFETÆPower MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperat | IRF | | ||
HEXFET짰 Power MOSFET Description Seventh Generation HEXFETÆPower MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature | KERSEMI | | ||
Advanced Process Technology Description Seventh Generation HEXFETÆPower MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperat | IRF | | ||
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature | IRF | | ||
Advanced Process Technology Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi | IRF | | ||
AUTOMOTIVE MOSFET Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro | KERSEMI | | ||
N-Channel MOSFET ■ Features ● VDS (V) = 40V ● ID = 75 A (VGS = 10V) ● RDS(ON) | KEXIN 科信电子 | | ||
AUTOMOTIVE MOSFET Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro | KERSEMI | | ||
Advanced Process Technology Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi | IRF | | ||
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature | IRF | | ||
Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature | IRF | | ||
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature | IRF | | ||
Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature | IRF | | ||
AUTOMOTIVE MOSFET Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro | KERSEMI | | ||
Advanced Process Technology Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi | IRF | | ||
AUTOMOTIVE MOSFET Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro | KERSEMI | | ||
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature | IRF | | ||
Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature | IRF | | ||
Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature | IRF | | ||
N-Channel MOSFET Transistor 文件：338.61 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Super trench MOSFET | JINGHENG 晶恒 | | ||
Advanced Process Technology 文件：279.7 Kbytes Page：11 Pages | IRF | | ||
Advanced Process Technology 文件：214.2 Kbytes Page：9 Pages | IRF | | ||
Advanced Process Technology 文件：214.2 Kbytes Page：9 Pages | IRF | | ||
丝印代码：D2PAK；isc N-Channel MOSFET Transistor 文件：263.14 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Advanced Process Technology 文件：279.7 Kbytes Page：11 Pages | IRF | | ||
Advanced Process Technology 文件：279.7 Kbytes Page：11 Pages | IRF | | ||
N-Channel MOSFET Transistor 文件：338.47 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Advanced Process Technology 文件：294.32 Kbytes Page：12 Pages | IRF | | ||
HEXFET짰 Power MOSFET 文件：291.97 Kbytes Page：10 Pages | IRF | | ||
Advanced Process Technology 文件：294.32 Kbytes Page：12 Pages | IRF | | ||
Advanced Process Technology 文件：307.88 Kbytes Page：12 Pages | IRF | | ||
Advanced Process Technology 文件：307.88 Kbytes Page：12 Pages | IRF | | ||
Advanced Process Technology 文件：307.88 Kbytes Page：12 Pages | IRF | | ||
Advanced Process Technology 文件：294.32 Kbytes Page：12 Pages | IRF | | ||
Isc N-Channel MOSFET Transistor 文件：299.76 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Advanced Process Technology 文件：307.88 Kbytes Page：12 Pages | IRF | | ||
Advanced Process Technology 文件：294.32 Kbytes Page：12 Pages | IRF | | ||
Fm Stereo Transmitter
| ROHM 罗姆 | | ||
Fm Stereo Transmitter
| ROHM 罗姆 | | ||
PRECISION LOW DRIFT VOLTAGE REFERENCES Voltage Reference Family The MC1404 of ICs is a family of temperature–compensated voltage references for precision data conversion applications, such as A/D, D/A, V/F, and F/V. Advances in laser–trimming and ion–implanted devices, as well as monolithic fabrication techniques, make these devices s | ONSEMI 安森美半导体 | | ||
SURFACE MOUNT SWITCHING DIODES Case : SOT-23 Molded Plastic Operating Temperature : -65°C to 150°C | JGD 固锝电子 | | ||
Integrated Circuit TV Sound IF Amplifier, Detector, AF Output Circuit Description: The NTE1404 is an integrated circuit in a 16–Lead DIP w/Fin type package designed for use as a TV sound signal processing circuit. Features: • Provides Total TV Sound Signal Processing Circuitry from IF Amplifier through AF Output • DC Volume Control System: Control Volt | NTE | |
IRF1404产品属性
- 类型
描述
- 型号
IRF1404
- 功能描述
MOSFET MOSFET, 40V, 162A, 4 mOhm, 160 nC Qg, TO-220AB
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
ROHS+Original |
NA |
32510 |
专业电子元器件供应链/QQ 350053121 /正纳电子 |
|||
IOR |
2025+ |
TO263-3 |
3645 |
全新原厂原装产品、公司现货销售 |
|||
IR |
25+ |
TO-220 |
11700 |
保证进口原装现货假一赔十 |
|||
IR |
19+ |
TO-263 |
34000 |
||||
IR |
25+23+ |
TO-220 |
24826 |
绝对原装正品全新进口深圳现货 |
|||
IR |
25+ |
TO-220 |
90000 |
一级代理现货保证进口原装正品假一罚十价格合理 |
|||
IR |
2015+ |
TO220 |
19898 |
专业代理原装现货,特价热卖! |
|||
IR |
26+ |
SOP-16 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
IR |
23+ |
44435 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
||||
IR |
06+ |
TO-220 |
10000 |
全新原装 绝对有货 |
IRF1404规格书下载地址
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IRF1404数据表相关新闻
IRF1404PBF
进口代理
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2020-1-12IR51H224-自激式半桥
特点 ·输出功率MOSFET在半桥配置 ·高侧栅极驱动器引导操作设计 ·自举二极管集成包（HD型） ·精确的定时控制两个功率MOSFET匹配延迟获得50％的占空比匹配死区的1.2us ·内部振荡器具有可编程的频率 ·15.6V齐纳钳位VCC的离线运行的半桥式输出是用RT淘汰 ·微功率启动 说明 该IR51H（四）XXX是完整的高电压，高转速，selfoscillating半桥电路.专有的HVIC和闩锁免疫CMOS技术，随着的HEXFET®功率MOSFET技术，使
2013-2-8
DdatasheetPDF页码索引
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