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位置：首页 > IC中文资料 > IRF1404

IRF1404价格

参考价格：￥7.2251

型号：IRF1404LPBF 品牌：INTERNATIONAL 备注：这里有IRF1404多少钱，2026年最近7天走势，今日出价，今日竞价，IRF1404批发/采购报价，IRF1404行情走势销售排行榜，IRF1404报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF1404

Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A??

Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn

IRF

IRF1404

采用 TO-220 封装的 40V 单 N 沟道功率 MOSFET

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度;

INFINEON

英飞凌

IRF1404

isc N-Channel Mosfet Transistor

Description Seventh Generation HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well k

ISC

无锡固电

IRF1404

Advanced Process Technology Ultra Low On-Resistance

Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn

KERSEMI

IRF1404

Super trench MOSFET

JINGHENG

晶恒

IRF1404L

Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A??

Description Seventh Generation HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temp

IRF

IRF1404L

Ultra Low On-Resistance

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. l Advanced Process Technology l Ultra Low On-Resistance l Dynam

KERSEMI

IRF1404LPBF

HEXFET짰 Power MOSFET

Description Seventh Generation HEXFETÆPower MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature

KERSEMI

IRF1404LPBF

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature

IRF

IRF1404LPbF

HEXFET짰 Power MOSFET

Description Seventh Generation HEXFETÆPower MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperat

IRF

IRF1404PBF

HEXFET짰 Power MOSFET

Description Seventh Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well k

IRF

IRF1404PBF

Advanced Process Technology

Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn

KERSEMI

IRF1404S

Ultra Low On-Resistance

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. l Advanced Process Technology l Ultra Low On-Resistance l Dynam

KERSEMI

IRF1404S

Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A??

Description Seventh Generation HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temp

IRF

IRF1404S

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature

IRF

IRF1404SPBF

HEXFET짰 Power MOSFET

Description Seventh Generation HEXFETÆPower MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperat

IRF

IRF1404SPBF

HEXFET짰 Power MOSFET

Description Seventh Generation HEXFETÆPower MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature

KERSEMI

IRF1404STRLPBF

Advanced Process Technology

Description Seventh Generation HEXFETÆPower MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperat

IRF

IRF1404Z

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature

IRF

IRF1404Z

Advanced Process Technology

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi

IRF

IRF1404Z

N-Channel MOSFET

■ Features ● VDS (V) = 40V ● ID = 75 A (VGS = 10V) ● RDS(ON)

KEXIN

科信电子

IRF1404Z

AUTOMOTIVE MOSFET Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

KERSEMI

IRF1404ZL

AUTOMOTIVE MOSFET Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

KERSEMI

IRF1404ZL

Advanced Process Technology

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi

IRF

IRF1404ZLPBF

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature

IRF

IRF1404ZLPBF

Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature

IRF

IRF1404ZPBF

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature

IRF

IRF1404ZPBF

Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature

IRF

IRF1404ZS

AUTOMOTIVE MOSFET Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

KERSEMI

IRF1404ZS

Advanced Process Technology

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi

IRF

IRF1404ZS_L

AUTOMOTIVE MOSFET Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

KERSEMI

IRF1404ZSPBF

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature

IRF

IRF1404ZSPBF

Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature

IRF

IRF1404ZSTRLPBF

Advanced Process Technology

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature

IRF

IRF1404_18

N-Channel MOSFET Transistor

文件：338.61 Kbytes Page：2 Pages

ISC

无锡固电

IRF1404E

Super trench MOSFET

JINGHENG

晶恒

IRF1404LPBF

Advanced Process Technology

文件：279.7 Kbytes Page：11 Pages

IRF

IRF1404PBF

Advanced Process Technology

文件：214.2 Kbytes Page：9 Pages

IRF

IRF1404PBF_15

Advanced Process Technology

文件：214.2 Kbytes Page：9 Pages

IRF

IRF1404S

丝印代码：D2PAK；isc N-Channel MOSFET Transistor

文件：263.14 Kbytes Page：2 Pages

ISC

无锡固电

IRF1404SPBF

Advanced Process Technology

文件：279.7 Kbytes Page：11 Pages

IRF

IRF1404SPBF_15

Advanced Process Technology

文件：279.7 Kbytes Page：11 Pages

IRF

IRF1404Z

N-Channel MOSFET Transistor

文件：338.47 Kbytes Page：2 Pages

ISC

无锡固电

IRF1404Z

Advanced Process Technology

文件：294.32 Kbytes Page：12 Pages

IRF

IRF1404ZGPBF

HEXFET짰 Power MOSFET

文件：291.97 Kbytes Page：10 Pages

IRF

IRF1404ZL

Advanced Process Technology

文件：294.32 Kbytes Page：12 Pages

IRF

IRF1404ZLPBF

Advanced Process Technology

文件：307.88 Kbytes Page：12 Pages

IRF

IRF1404ZPBF

Advanced Process Technology

文件：307.88 Kbytes Page：12 Pages

IRF

IRF1404ZPBF_15

Advanced Process Technology

文件：307.88 Kbytes Page：12 Pages

IRF

IRF1404ZS

Isc N-Channel MOSFET Transistor

文件：299.76 Kbytes Page：2 Pages

ISC

无锡固电

IRF1404ZS

Advanced Process Technology

文件：294.32 Kbytes Page：12 Pages

IRF

IRF1404ZSPBF

Advanced Process Technology

文件：307.88 Kbytes Page：12 Pages

IRF

IRF1404ZSTRL

Advanced Process Technology

文件：294.32 Kbytes Page：12 Pages

IRF

BA1404

Fm Stereo Transmitter

ROHM

罗姆

BA1404F

Fm Stereo Transmitter

ROHM

罗姆

MC1404

PRECISION LOW DRIFT VOLTAGE REFERENCES

Voltage Reference Family The MC1404 of ICs is a family of temperature–compensated voltage references for precision data conversion applications, such as A/D, D/A, V/F, and F/V. Advances in laser–trimming and ion–implanted devices, as well as monolithic fabrication techniques, make these devices s

ONSEMI

安森美半导体

MMBD1404

SURFACE MOUNT SWITCHING DIODES

Case : SOT-23 Molded Plastic Operating Temperature : -65°C to 150°C

JGD

固锝电子

NTE1404

Integrated Circuit TV Sound IF Amplifier, Detector, AF Output Circuit

Description: The NTE1404 is an integrated circuit in a 16–Lead DIP w/Fin type package designed for use as a TV sound signal processing circuit. Features: • Provides Total TV Sound Signal Processing Circuitry from IF Amplifier through AF Output • DC Volume Control System: Control Volt

NTE

IRF1404产品属性

  • 类型

    描述

  • OPN：

    IRF1404PBF

  • Qualification：

    Non-Automotive

  • Package name：

    TO220

  • VDS max：

    40 V

  • RDS (on) @10V max：

    4 mΩ

  • ID @25°C max：

    202 A

  • QG typ @10V：

    131 nC

  • Special Features：

    Wide SOA

  • Polarity：

    N

  • VGS(th) min：

    2 V

  • VGS(th) max：

    4 V

  • VGS(th)：

    3 V

  • Technology：

    IR MOSFET™

IRF1404供应商更多...

更新时间：2026-8-2 17:49:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市富利微电子科技有限公司
IRF1404ZPBF
IR
26+
TO-220
11700
保证进口原装现货假一赔十
询价
深圳市金华微盛电子有限公司
IRF1404ZSTRPBF
IR
19+
TO-263
34000
询价
深圳市凌旭科技有限公司
IRF1404PBF
INFINEON
21+
SMD
16230
十年信誉,只做原装,有挂就有现货!
询价
中天科工半导体（深圳）有限公司
IRF1404ZPBF
INFINEON/英飞凌
25+
TO-220
32000
INFINEON/英飞凌全新特价IRF1404ZPBF即刻询购立享优惠#长期有货
询价
深圳市卓越微芯电子有限公司
IRF1404STRLPBF
IR
25+
TO-263
9600
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
深圳深宇韬电子科技有限公司
IRF1404ZSTRLPBF
INFINEON
22+
sot
6600
正品渠道现货,终端可提供BOM表配单。
询价
深圳市粤骏腾电子科技有限公司
IRF1404ZPBF
IR
26+
TO-220
20000
原装正品现货
询价
深圳市勤思达科技有限公司
IRF1404PBF
IR
13+
TO-220/TO-263
50000
勤思达科技主营IR系列,全新原装正品,现货供应。
询价
深圳市赛特兴科技有限公司
IRF1404PBF
INFINEON
23+
TO-220
21195
正规渠道,只有原装!
询价
深圳市宇集芯电子有限公司
IRF1404PBF
IR
25+
TO-220
90000
一级代理现货保证进口原装正品假一罚十价格合理
询价

IRF1404芯片相关品牌

IRF1404规格书下载地址

IRF1404参数引脚图相关

IRF1404数据表相关新闻

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    进口代理

    2025-4-2

  • IRF1407PBF

    IRF1407PBF

    2022-7-22

  • IRF1404ZPBF

    深圳市科恒伟业电子有限公司 深圳市福田区华强北振兴路101号华匀大厦2栋5楼516 网站 http://www.kehengweiyedz.cn 网站http://www.kehengweiye.com 邮箱：yulin522@126.com 0755-83200050 15817287769 柯先生

    2020-4-18

  • IRA-S210ST01

    IRA-S210ST01，全新原装现货当天发货或门市自取0755-82732291.

    2020-2-17

  • IRF130CHP1100，IRF1310N，IRF1310NL，IRF1310NS，IRF1404PBF

    IRF130CHP1100，IRF1310N，IRF1310NL，IRF1310NS，IRF1404PBF

    2020-1-12

  • IR51H224-自激式半桥

    特点 ·输出功率MOSFET在半桥配置 ·高侧栅极驱动器引导操作设计 ·自举二极管集成包（HD型） ·精确的定时控制两个功率MOSFET匹配延迟获得50％的占空比匹配死区的1.2us ·内部振荡器具有可编程的频率 ·15.6V齐纳钳位VCC的离线运行的半桥式输出是用RT淘汰 ·微功率启动 说明 该IR51H（四）XXX是完整的高电压，高转速，selfoscillating半桥电路.专有的HVIC和闩锁免疫CMOS技术，随着的HEXFET®功率MOSFET技术，使

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