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IRF1405价格
参考价格:¥3.6681
型号:IRF1405PBF 品牌:INTERNATIONAL 备注:这里有IRF1405多少钱,2025年最近7天走势,今日出价,今日竞价,IRF1405批发/采购报价,IRF1405行情走势销售排行榜,IRF1405报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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IRF1405 | PowerMOSFET(Vdss=55V,Rds(on)=5.3mohm,Id=169A?? Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtempe | IRF International Rectifier | ||
IRF1405 | ElectricPowerSteering(EPS) Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET®PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemp | KERSEMI Kersemi Electronic Co., Ltd. | ||
IRF1405 | HEXFET짰PowerMOSFET 文件:255.41 Kbytes Page:10 Pages | IRF International Rectifier | ||
IRF1405 | N-ChannelMOSFETTransistor 文件:338.97 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
AUTOMOTIVEMOSFET Description StripePlanardesignofHEXFET®PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveav | KERSEMI Kersemi Electronic Co., Ltd. | |||
PowerMOSFET(Vdss=55V,Rds(on)=5.3mohm,Id=131A?? Description StripePlanardesignofHEXFET®PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveav | IRF International Rectifier | |||
AUTOMOTIVEMOSFET(VDSS=55V,RDS(on)=5.3m廓,ID=131A) Description StripePlanardesignofHEXFET®PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveav | IRF International Rectifier | |||
AUTOMOTIVEMOSFET VDSS=55V RDS(on)=5.3mΩ ID=169A Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOS | IRF International Rectifier | |||
PowerMOSFET(Vdss=55V,Rds(on)=5.3mohm,Id=131A?? Description StripePlanardesignofHEXFET®PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveav | IRF International Rectifier | |||
AUTOMOTIVEMOSFET Description StripePlanardesignofHEXFET®PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveav | KERSEMI Kersemi Electronic Co., Ltd. | |||
AUTOMOTIVEMOSFET(VDSS=55V,RDS(on)=5.3m廓,ID=131A) Description StripePlanardesignofHEXFET®PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveav | IRF International Rectifier | |||
AUTOMOTIVEMOSFET VDSS=55V RDS(on)=4.9mΩ ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemp | IRF International Rectifier | |||
AUTOMOTIVEMOSFET VDSS=55V RDS(on)=4.9mΩ ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemp | IRF International Rectifier | |||
AUTOMOTIVEMOSFET VDSS=55V RDS(on)=4.9mΩ ID=120A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtem | IRF International Rectifier | |||
HEXFET짰PowerMOSFET(VDSS=55V,RDS(on)=4.9m廓,ID=120A) VDSS=55V RDS(on)=4.9mΩ ID=120A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtem | IRF International Rectifier | |||
AUTOMOTIVEMOSFET(VDSS=55V,RDS(on)=4.9m廓,ID=75A) VDSS=55V RDS(on)=4.9mΩ ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemp | IRF International Rectifier | |||
AUTOMOTIVEMOSFET(VDSS=55V,RDS(on)=4.9m廓,ID=75A) VDSS=55V RDS(on)=4.9mΩ ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemp | IRF International Rectifier | |||
AUTOMOTIVEMOSFET VDSS=55V RDS(on)=4.9mΩ ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemp | IRF International Rectifier | |||
AUTOMOTIVEMOSFET VDSS=55V RDS(on)=4.9mΩ ID=120A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtem | IRF International Rectifier | |||
HEXFET짰PowerMOSFET(VDSS=55V,RDS(on)=4.9m廓,ID=120A) VDSS=55V RDS(on)=4.9mΩ ID=120A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtem | IRF International Rectifier | |||
AUTOMOTIVEMOSFET(VDSS=55V,RDS(on)=4.9m廓,ID=75A) VDSS=55V RDS(on)=4.9mΩ ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemp | IRF International Rectifier | |||
HEXFET짰PowerMOSFET 文件:255.41 Kbytes Page:10 Pages | IRF International Rectifier | |||
AdvancedProcessTechnology 文件:263.89 Kbytes Page:9 Pages | IRF International Rectifier | |||
AdvancedProcessTechnology 文件:263.89 Kbytes Page:9 Pages | IRF International Rectifier | |||
iscN-ChannelMOSFETTransistor 文件:263.54 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
AdvancedProcessTechnology 文件:313.75 Kbytes Page:11 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
AdvancedProcessTechnology 文件:313.75 Kbytes Page:11 Pages | IRF International Rectifier | |||
AdvancedProcessTechnology 文件:313.75 Kbytes Page:11 Pages | IRF International Rectifier | |||
N-ChannelMOSFETTransistor 文件:338.82 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
AdvancedProcessTechnology 文件:401.85 Kbytes Page:12 Pages | IRF International Rectifier | |||
AdvancedProcessTechnology 文件:401.85 Kbytes Page:12 Pages | IRF International Rectifier | |||
AdvancedProcessTechnology 文件:401.85 Kbytes Page:12 Pages | IRF International Rectifier | |||
IscN-ChannelMOSFETTransistor 文件:299.72 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
ACFilmCapacitorsLighting Features ■Self-healingproperties ■Lowdissipationfactor ■Highinsulationresisitance Construction ■Dielectric:polypropylenefilm ■Aluminiumcan ■Softpolyurethanresin ■Internaldischageresistor ■Overpressuredisconnector Typicalapplications Forgeneralsinewaveapplicat | EPCOSepcos 爱普科斯 | |||
ACTIVE(DIGITAL)DELAYLINES [RCD] Wideselectionofsizes! RCD’sdigitaldelaylineshavebeendesignedtoprovideprecisetapdelayswithallthenecessarydriveandpick-offcircuitry.Allinputsandoutputsareschottky-typeandrequirenoadditionalcomponentstoachievespecifieddelays.Encapsulated/moldedconstructi | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
Four-ChannelLEDBacklightDriverwithIntegratedBoostandHighFrequencyDirectPWMDimming Features •VINRange:4.5Vto5.5V/5.0Vto26.0V •LXRatedto50V •MaximumIOUT:120mA •Upto92Efficiency •HighEfficiencyLight-LoadMode •4LEDCurrentSinksupto30mA/each ▪±2Accuracy(21mA) ▪±2Matching(21mA) •FlexibleConfigurations ▪DisableorParallel •Switching | SKYWORKSSkyworks Solutions Inc. 思佳讯美国思佳讯公司 | |||
AnalogMultiplexers/Demultiplexers 文件:169.98 Kbytes Page:12 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
AnalogMultiplexers/Demultiplexers 文件:169.98 Kbytes Page:12 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |
IRF1405产品属性
- 类型
描述
- 型号
IRF1405
- 制造商
International Rectifier
- 功能描述
MOSFET N TO-220
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
24+ |
TO2633 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
IR(国际整流器) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
IOR |
2016+ |
TO220 |
3500 |
本公司只做原装,假一罚十,可开17%增值税发票! |
|||
INFINEON |
23+ |
K-B |
1020 |
只有原装,请来电咨询 |
|||
IR |
24+ |
TO-263 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
IR |
16+ |
D2PAK |
4800 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
INFINEON/英飞凌 |
22+ |
TO-220 |
100000 |
代理渠道/只做原装/可含税 |
|||
INFINEON/英飞凌 |
25+ |
TO-220 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
IOR |
24+ |
TO263 |
20000 |
全新原厂原装,进口正品现货,正规渠道可含税!! |
|||
IR |
21+ |
TO-220 |
10000 |
只做原装,质量保证 |
IRF1405规格书下载地址
IRF1405参数引脚图相关
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IRF1405数据表相关新闻
IRF1404PBF
进口代理
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深圳市科恒伟业电子有限公司深圳市福田区华强北振兴路101号华匀大厦2栋5楼516网站http://www.kehengweiyedz.cn网站http://www.kehengweiye.com邮箱:yulin522@126.com0755-8320005015817287769柯先生
2020-4-18IRF130CHP1100,IRF1310N,IRF1310NL,IRF1310NS,IRF1404PBF
IRF130CHP1100,IRF1310N,IRF1310NL,IRF1310NS,IRF1404PBF
2020-1-12
DdatasheetPDF页码索引
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