Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A??

Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating tempe

采用 TO-220 封装的 55V 单 N 沟道功率 MOSFET

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度;

Electric Power Steering (EPS)

Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temp

HEXFET짰 Power MOSFET

文件：255.41 Kbytes Page：10 Pages

N-Channel MOSFET Transistor

文件：338.97 Kbytes Page：2 Pages

Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A??

Description Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive av

AUTOMOTIVE MOSFET

Description Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive av

AUTOMOTIVE MOSFET ( VDSS = 55V , RDS(on) = 5.3m廓 , ID = 131A )

Description Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive av

AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 5.3mΩ ID = 169A Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOS

Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A??

Description Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive av

AUTOMOTIVE MOSFET

Description Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive av

55V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度;

AUTOMOTIVE MOSFET ( VDSS = 55V , RDS(on) = 5.3m廓 , ID = 131A )

Description Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive av

AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 4.9mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temp

采用 TO-220 封装的 55V 单 N 沟道功率 MOSFET

\n优势:\n• Optimized for broadest availability from distribution partners\n• Product qualification according to JEDEC standard\n• Optimized for 10V gate-drive voltage (called Normal level)\n• Industry standard through-hole power package\n• High-current carrying capability package (upto 195A, die-size ;

AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 4.9mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temp

AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 4.9mΩ ID = 120A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating tem

HEXFET짰 Power MOSFET ( VDSS = 55V , RDS(on) = 4.9m廓 , ID = 120A )

VDSS = 55V RDS(on) = 4.9mΩ ID = 120A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating tem

AUTOMOTIVE MOSFET ( VDSS = 55V , RDS(on) = 4.9m廓 , ID = 75A )

VDSS = 55V RDS(on) = 4.9mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temp

AUTOMOTIVE MOSFET ( VDSS = 55V , RDS(on) = 4.9m廓 , ID = 75A )

VDSS = 55V RDS(on) = 4.9mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temp

AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 4.9mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temp

AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 4.9mΩ ID = 120A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating tem

HEXFET짰 Power MOSFET ( VDSS = 55V , RDS(on) = 4.9m廓 , ID = 120A )

VDSS = 55V RDS(on) = 4.9mΩ ID = 120A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating tem

AUTOMOTIVE MOSFET ( VDSS = 55V , RDS(on) = 4.9m廓 , ID = 75A )

VDSS = 55V RDS(on) = 4.9mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temp

HEXFET짰 Power MOSFET

文件：255.41 Kbytes Page：10 Pages

Advanced Process Technology

文件：263.89 Kbytes Page：9 Pages

Advanced Process Technology

文件：263.89 Kbytes Page：9 Pages

丝印代码：D2PAK；isc N-Channel MOSFET Transistor

文件：263.54 Kbytes Page：2 Pages

Advanced Process Technology

文件：313.75 Kbytes Page：11 Pages

Advanced Process Technology

文件：313.75 Kbytes Page：11 Pages

Advanced Process Technology

文件：313.75 Kbytes Page：11 Pages

N-Channel MOSFET Transistor

文件：338.82 Kbytes Page：2 Pages

Advanced Process Technology

文件：401.85 Kbytes Page：12 Pages

Advanced Process Technology

文件：401.85 Kbytes Page：12 Pages

Advanced Process Technology

文件：401.85 Kbytes Page：12 Pages

丝印代码：D2PAK；Isc N-Channel MOSFET Transistor

文件：299.72 Kbytes Page：2 Pages

VARIABLE CAPACITANCE DIODE

DESCRIPTION The KV1405 is an 8 volt range variable capacitance diode designed for AM tuner applications. It contains two elements housed in the miniature SOT23-3 surface mount package. FEATURES ■ Excellent Linearity (CV Curve) ■ Large Capacitance Ratio (A = 2.10 minimum) ■ Two Diodes in a Min

VARIABLE CAPACITANCE DIODE

DESCRIPTION The KV1405 is an 8 volt range variable capacitance diode designed for AM tuner applications. It contains two elements housed in the miniature SOT23-3 surface mount package. FEATURES ■ Excellent Linearity (CV Curve) ■ Large Capacitance Ratio (A = 2.10 minimum) ■ Two Diodes in a Min

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Analog Multiplexers/Demultiplexers The MC14051B, MC14052B, and MC14053B analog multiplexers are digitally−controlled analog switches. The MC14051B effectively implements an SP8T solid state switch, the MC14052B a DP4T, and the MC14053B a Triple SPDT. All three devices feature low ON impedance a

HIGH SPEED SYNCHRONOUS POWER MOSFET SMART DRIVER

DESCRIPTION The SC1405B is a Dual-MOSFET Driver with an internal Overlap Protection Circuit to prevent shoot-through from VIN to GND in the main switching and synchronous MOSFET’s. Each driver is capable of driving a 3000pF load in 15ns rise/fall time and has ULTRAFAST propagation delay from in

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