Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A??

Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating tempe

Electric Power Steering (EPS)

Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temp

N-Channel MOSFET Transistor

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HEXFET짰 Power MOSFET

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采用 TO-220 封装的 55V 单 N 沟道功率 MOSFET

Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A??

Description Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive av

AUTOMOTIVE MOSFET

Description Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive av

AUTOMOTIVE MOSFET ( VDSS = 55V , RDS(on) = 5.3m廓 , ID = 131A )

Description Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive av

AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 5.3mΩ ID = 169A Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOS

Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A??

Description Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive av

AUTOMOTIVE MOSFET

Description Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive av

AUTOMOTIVE MOSFET ( VDSS = 55V , RDS(on) = 5.3m廓 , ID = 131A )

Description Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive av

AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 4.9mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temp

AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 4.9mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temp

AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 4.9mΩ ID = 120A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating tem

HEXFET짰 Power MOSFET ( VDSS = 55V , RDS(on) = 4.9m廓 , ID = 120A )

VDSS = 55V RDS(on) = 4.9mΩ ID = 120A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating tem

AUTOMOTIVE MOSFET ( VDSS = 55V , RDS(on) = 4.9m廓 , ID = 75A )

VDSS = 55V RDS(on) = 4.9mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temp

AUTOMOTIVE MOSFET ( VDSS = 55V , RDS(on) = 4.9m廓 , ID = 75A )

VDSS = 55V RDS(on) = 4.9mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temp

AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 4.9mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temp

AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 4.9mΩ ID = 120A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating tem

HEXFET짰 Power MOSFET ( VDSS = 55V , RDS(on) = 4.9m廓 , ID = 120A )

VDSS = 55V RDS(on) = 4.9mΩ ID = 120A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating tem

AUTOMOTIVE MOSFET ( VDSS = 55V , RDS(on) = 4.9m廓 , ID = 75A )

VDSS = 55V RDS(on) = 4.9mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temp

HEXFET짰 Power MOSFET

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Advanced Process Technology

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Advanced Process Technology

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isc N-Channel MOSFET Transistor

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55V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装

Advanced Process Technology

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Advanced Process Technology

文件：313.75 Kbytes Page：11 Pages

Advanced Process Technology

文件：313.75 Kbytes Page：11 Pages

N-Channel MOSFET Transistor

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采用 TO-220 封装的 55V 单 N 沟道功率 MOSFET

Advanced Process Technology

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Advanced Process Technology

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Advanced Process Technology

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Isc N-Channel MOSFET Transistor

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AC Film Capacitors Lighting

Features ■ Self-healing properties ■ Low dissipation factor ■ High insulation resisitance Construction ■ Dielectric: polypropylene film ■ Aluminium can ■ Soft polyurethan resin ■ Internal dischage resistor ■ Overpressure disconnector Typical applications For general sine wave applicat

ACTIVE (DIGITAL) DELAY LINES

[RCD] Wide selection of sizes! RCD’s digital delay lines have been designed to provide precise tap delays with all the necessary drive and pick-off circuitry. All inputs and outputs are schottky-type and require no additional components to achieve specified delays. Encapsulated/molded constructi

Four-Channel LED Backlight Driver with Integrated Boost and High Frequency Direct PWM Dimming

Features • VIN Range: 4.5V to 5.5V / 5.0V to 26.0V • LX Rated to 50V • Maximum IOUT: 120mA • Up to 92 Efficiency • High Efficiency Light-Load Mode • 4 LED Current Sinks up to 30mA/each ▪ ±2 Accuracy (21mA) ▪ ±2 Matching (21mA) • Flexible Configurations ▪ Disable or Parallel • Switching

Analog Multiplexers/Demultiplexers

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Analog Multiplexers/Demultiplexers

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