IRF1405价格

参考价格:¥3.6681

型号:IRF1405PBF 品牌:INTERNATIONAL 备注:这里有IRF1405多少钱,2025年最近7天走势,今日出价,今日竞价,IRF1405批发/采购报价,IRF1405行情走势销售排行榜,IRF1405报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRF1405

PowerMOSFET(Vdss=55V,Rds(on)=5.3mohm,Id=169A??

Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtempe

IRF

International Rectifier

IRF
IRF1405

ElectricPowerSteering(EPS)

Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET®PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemp

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
IRF1405

HEXFET짰PowerMOSFET

文件:255.41 Kbytes Page:10 Pages

IRF

International Rectifier

IRF
IRF1405

N-ChannelMOSFETTransistor

文件:338.97 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

AUTOMOTIVEMOSFET

Description StripePlanardesignofHEXFET®PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveav

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

PowerMOSFET(Vdss=55V,Rds(on)=5.3mohm,Id=131A??

Description StripePlanardesignofHEXFET®PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveav

IRF

International Rectifier

IRF

AUTOMOTIVEMOSFET(VDSS=55V,RDS(on)=5.3m廓,ID=131A)

Description StripePlanardesignofHEXFET®PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveav

IRF

International Rectifier

IRF

AUTOMOTIVEMOSFET

VDSS=55V RDS(on)=5.3mΩ ID=169A Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOS

IRF

International Rectifier

IRF

PowerMOSFET(Vdss=55V,Rds(on)=5.3mohm,Id=131A??

Description StripePlanardesignofHEXFET®PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveav

IRF

International Rectifier

IRF

AUTOMOTIVEMOSFET

Description StripePlanardesignofHEXFET®PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveav

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

AUTOMOTIVEMOSFET(VDSS=55V,RDS(on)=5.3m廓,ID=131A)

Description StripePlanardesignofHEXFET®PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveav

IRF

International Rectifier

IRF

AUTOMOTIVEMOSFET

VDSS=55V RDS(on)=4.9mΩ ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemp

IRF

International Rectifier

IRF

AUTOMOTIVEMOSFET

VDSS=55V RDS(on)=4.9mΩ ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemp

IRF

International Rectifier

IRF

AUTOMOTIVEMOSFET

VDSS=55V RDS(on)=4.9mΩ ID=120A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtem

IRF

International Rectifier

IRF

HEXFET짰PowerMOSFET(VDSS=55V,RDS(on)=4.9m廓,ID=120A)

VDSS=55V RDS(on)=4.9mΩ ID=120A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtem

IRF

International Rectifier

IRF

AUTOMOTIVEMOSFET(VDSS=55V,RDS(on)=4.9m廓,ID=75A)

VDSS=55V RDS(on)=4.9mΩ ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemp

IRF

International Rectifier

IRF

AUTOMOTIVEMOSFET(VDSS=55V,RDS(on)=4.9m廓,ID=75A)

VDSS=55V RDS(on)=4.9mΩ ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemp

IRF

International Rectifier

IRF

AUTOMOTIVEMOSFET

VDSS=55V RDS(on)=4.9mΩ ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemp

IRF

International Rectifier

IRF

AUTOMOTIVEMOSFET

VDSS=55V RDS(on)=4.9mΩ ID=120A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtem

IRF

International Rectifier

IRF

HEXFET짰PowerMOSFET(VDSS=55V,RDS(on)=4.9m廓,ID=120A)

VDSS=55V RDS(on)=4.9mΩ ID=120A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtem

IRF

International Rectifier

IRF

AUTOMOTIVEMOSFET(VDSS=55V,RDS(on)=4.9m廓,ID=75A)

VDSS=55V RDS(on)=4.9mΩ ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemp

IRF

International Rectifier

IRF

HEXFET짰PowerMOSFET

文件:255.41 Kbytes Page:10 Pages

IRF

International Rectifier

IRF

AdvancedProcessTechnology

文件:263.89 Kbytes Page:9 Pages

IRF

International Rectifier

IRF

AdvancedProcessTechnology

文件:263.89 Kbytes Page:9 Pages

IRF

International Rectifier

IRF

iscN-ChannelMOSFETTransistor

文件:263.54 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

AdvancedProcessTechnology

文件:313.75 Kbytes Page:11 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

AdvancedProcessTechnology

文件:313.75 Kbytes Page:11 Pages

IRF

International Rectifier

IRF

AdvancedProcessTechnology

文件:313.75 Kbytes Page:11 Pages

IRF

International Rectifier

IRF

N-ChannelMOSFETTransistor

文件:338.82 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

AdvancedProcessTechnology

文件:401.85 Kbytes Page:12 Pages

IRF

International Rectifier

IRF

AdvancedProcessTechnology

文件:401.85 Kbytes Page:12 Pages

IRF

International Rectifier

IRF

AdvancedProcessTechnology

文件:401.85 Kbytes Page:12 Pages

IRF

International Rectifier

IRF

IscN-ChannelMOSFETTransistor

文件:299.72 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

ACFilmCapacitorsLighting

Features ■Self-healingproperties ■Lowdissipationfactor ■Highinsulationresisitance Construction ■Dielectric:polypropylenefilm ■Aluminiumcan ■Softpolyurethanresin ■Internaldischageresistor ■Overpressuredisconnector Typicalapplications Forgeneralsinewaveapplicat

EPCOSepcos

爱普科斯

EPCOS

ACTIVE(DIGITAL)DELAYLINES

[RCD] Wideselectionofsizes! RCD’sdigitaldelaylineshavebeendesignedtoprovideprecisetapdelayswithallthenecessarydriveandpick-offcircuitry.Allinputsandoutputsareschottky-typeandrequirenoadditionalcomponentstoachievespecifieddelays.Encapsulated/moldedconstructi

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

Four-ChannelLEDBacklightDriverwithIntegratedBoostandHighFrequencyDirectPWMDimming

Features •VINRange:4.5Vto5.5V/5.0Vto26.0V •LXRatedto50V •MaximumIOUT:120mA •Upto92Efficiency •HighEfficiencyLight-LoadMode •4LEDCurrentSinksupto30mA/each ▪±2Accuracy(21mA) ▪±2Matching(21mA) •FlexibleConfigurations ▪DisableorParallel •Switching

SKYWORKSSkyworks Solutions Inc.

思佳讯美国思佳讯公司

SKYWORKS

AnalogMultiplexers/Demultiplexers

文件:169.98 Kbytes Page:12 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

AnalogMultiplexers/Demultiplexers

文件:169.98 Kbytes Page:12 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

IRF1405产品属性

  • 类型

    描述

  • 型号

    IRF1405

  • 制造商

    International Rectifier

  • 功能描述

    MOSFET N TO-220

更新时间:2025-8-1 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Infineon(英飞凌)
24+
TO2633
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
IR(国际整流器)
24+
NA/
8735
原厂直销,现货供应,账期支持!
IOR
2016+
TO220
3500
本公司只做原装,假一罚十,可开17%增值税发票!
INFINEON
23+
K-B
1020
只有原装,请来电咨询
IR
24+
TO-263
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
IR
16+
D2PAK
4800
一级代理,专注军工、汽车、医疗、工业、新能源、电力
INFINEON/英飞凌
22+
TO-220
100000
代理渠道/只做原装/可含税
INFINEON/英飞凌
25+
TO-220
54648
百分百原装现货 实单必成 欢迎询价
IOR
24+
TO263
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
IR
21+
TO-220
10000
只做原装,质量保证

IRF1405芯片相关品牌

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