N-Channel MOSFET Transistor

• DESCRITION • High frequency switching • FEATURES • Static drain-source on-resistance: RDS(on)≤60mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

OptiMOSTM3 Power-Transistor

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 • Id

N-Channel MOSFET Transistor

• DESCRITION • Suitable for hard and soft switching • FEATURES • Static drain-source on-resistance: RDS(on)≤0.18Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

MOSFET 600V CoolMOSª CM8 Power Transistor

Features • Suitable for hard and soft switching topologies thanks to an outstanding commutation ruggedness • Significant reduction of switching and conduction losses • Best in class RDS(on) per package products enabled by ultra low RDS(on)*A Benefits • Ease of use and fast design-in throug

600V CoolMOS짧 P7 Power Transistor

MOSFET 600V CoolMOSª P7 Power Transistor The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS™ P7 series is the successor to the CoolMOS™ P

600V CoolMOS짧 P7 Power Transistor

MOSFET 600V CoolMOSª P7 Power Transistor The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS™ P7 series is the successor to the CoolMOS™ P

600V CoolMOS짧 CE Power Transistor

Features •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •Qualifiedforstandardgradeapplications

600V CoolMOS C6 Power Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very high commutation ruggedness • Easy to

N-Channel MOSFET Transistor

• DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤1.4Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

600V CoolMOS C6 Power Transistor IPD60R1K4C6

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very high commutation ruggedness • Easy to

600V CoolMOSª PFD7 SJ Power Device

Features • Extremely low losses due to very low FOM RDS(on)*Qg and RDS(on)*Eoss • Low switching losses Eoss, excellent thermal behavior • Fast body diode • Wide range portfolio of RDS(on) and package variations • Integrated zener diode

600V CoolMOSª PFD7 SJ Power Device

Features • Extremely low losses due to very low FOM RDS(on)*Qg and RDS(on)*Eoss • Low switching losses Eoss, excellent thermal behavior • Fast body diode • Wide range portfolio of RDS(on) and package variations

600V CoolMOSª PFD7 SJ Power Device

Features • Extremely low losses due to very low FOM RDS(on)*Qg and RDS(on)*Eoss • Low switching losses Eoss, excellent thermal behavior • Fast body diode • Wide range portfolio of RDS(on) and package variations • Integrated zener diode

600V CoolMOS C6 Power Transistor

600V CoolMOS™ C6 Power Transistor Applicationsa PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS.

N-Channel MOSFET Transistor

• DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤2Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

600V CoolMOSª PFD7 SJ Power Device

Features • Extremely low losses due to very low FOM RDS(on)*Qg and RDS(on)*Eoss • Low switching losses Eoss, excellent thermal behavior • Fast body diode • Wide range portfolio of RDS(on) and package variations • Integrated zener diode

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resulting

N-Channel MOSFET Transistor

• DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤0.38Ω ·Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

isc N-Channel MOSFET Transistor

• FEATURES • With TO-252(DPAK) packaging • With low gate drive requirements • Very high commutation ruggedness • Extremely high frequency operation • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching app

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS™ P6 series combines theexperience of the leading SJ MOSFET supplier with high class innovation.The offered device

N-Channel MOSFET Transistor

• DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤0.38Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

CoolMOS Power Transistor

CoolMOS® Power Transistor Features • Worldwide best Rds,on in TO252 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified for industrial grade applications according to JEDEC1) • Pb-free lead plating; RoHS compliant; available in Halogen free mold co

N-Channel MOSFET Transistor

• DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤0.385Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

600V CoolMOS™ CP Power Transistor

Ultra low gate charge Extreme dv/dt rated High peak current capability Fully qualified according JEDEC for industrial applications Pb-free lead plating; RoHS compliant, available in Halogen free mold compound

600V CoolMOS C6 Power Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very high commutation ruggedness • Easy to

N-Channel MOSFET Transistor

• DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤3.3Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

120 W 24 V 3.5 A 12 V 3 A SMPS demonstrator with IDP2308

Features of IDP2308 Integrated 600 V start-up cell Integrated floating driver for HB high-side MOSFET Multi-mode operation of PFC Integrated PIT regulator for PFC controller Active X-CAP discharge function supports low stand-by power consumption Comprehensive set of PFC/LLC protection featur

600V CoolMOS E6 Power Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson*Qg and Eoss • Very high commutation ruggedness • Easy to

N-Channel MOSFET Transistor

• DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤0.45Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered dev

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETS, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOSTM C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offer

CoolMOS Power Transistor

Features • Lowest figure-of-merit Ron x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified for industrial grade applications according to JEDEC1) • Pb-free lead plating; RoHS compliant CoolMOS CP is designed for: • Hard switching SMPS topologies

N-Channel MOSFET Transistor

• DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤0.52Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered dev

N-Channel MOSFET Transistor

• DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤0.6Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

MOSFET 600V CoolMOSª CM8 Power Transistor

Features • Suitable for hard and soft switching topologies thanks to an outstanding commutation ruggedness • Significant reduction of switching and conduction losses • Best in class RDS(on) per package products enabled by ultra low RDS(on)*A Benefits • Ease of use and fast design-in throug

CoolMOS Power Transistor

Features • Lowest figure-of-merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is designed for: • Hard switching SMPS topologies

N-Channel MOSFET Transistor

• DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤0.6Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

600V CoolMOS E6 Power Transistor

Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS E6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devi

N-Channel MOSFET Transistor

• DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤0.6Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

N-Channel MOSFET Transistor

• DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤0.6Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

Metal Oxide Semiconductor Field Effect Transistor

600V CoolMOS™ P6 Power Transistor Applications    PFC stages, hard switching PWM stages and resonant switching stages    for e.g. PC Silverbox, Adapter, LCD&PDPTV, Lighting, Server, Telecom    and UPS.

600V CoolMOSª PFD7 SJ Power Device

Features • Extremely low losses due to very low FOM RDS(on)*Qg and RDS(on)*Eoss • Low switching losses Eoss, excellent thermal behavior • Fast body diode • Wide range portfolio of RDS(on) and package variations • Integrated zener diode

600V CoolMOS짧 CE Power Transistor

Features •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •Qualifiedforstandardgradeapplications

600V CoolMOS E6 Power Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very high commutation ruggedness • Easy to

N-Channel MOSFET Transistor

• DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤0.75Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resulting

N-Channel MOSFET Transistor

• DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤0.95Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

N-Channel MOSFET Transistor

• DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤64mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

OptiMOS짰 Power-Transistor

Features • For fast switching converters and sync. rectification • N-channel enhancement - logic level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant

MOSFET OptiMOSTM Power Transistor, -60 V

Features • P-Channel • Very low on-resistance RDS(on) • 100 avalanche tested • Normal Level • Enhancement mode • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

N-Channel MOSFET Transistor

• DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤0.225Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

650V CoolMOS??C7 Power Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Increased MOSFET dv/dt ruggedness • Increased efficiency due to best in class FOM RDS(on) *Eoss and RDS(o

650V CoolMOS C6 Power Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resulting

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETS, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The result

N-Channel MOSFET Transistor

• DESCRITION • Fast switching • Very high commutation ruggedness • FEATURES • Static drain-source on-resistance: RDS(on)≤0.38Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETS, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The result

650V CoolMOS E6 Power Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very high commutation ruggedness • Easy to

N-Channel MOSFET Transistor

• DESCRITION • Very high commutation ruggedness • FEATURES • Static drain-source on-resistance: RDS(on)≤0.38Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

650V CoolMOS C6 CFD Power Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdso