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IPD60R450E6价格
参考价格：￥4.4579
型号：IPD60R450E6 品牌：Infineon 备注：这里有IPD60R450E6多少钱，2026年最近7天走势，今日出价，今日竞价，IPD60R450E6批发/采购报价，IPD60R450E6行情走势销售排行榜，IPD60R450E6报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IPD60R450E6 | 600V CoolMOS E6 Power Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson*Qg and Eoss • Very high commutation ruggedness • Easy to | INFINEON 英飞凌 |   | |
IPD60R450E6 | N-Channel MOSFET Transistor • DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤0.45Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | |
IPD60R450E6 | 500 V-950 V CoolMOS™ N 沟道功率 MOSFET | INFINEON 英飞凌 | | |
IPD60R450E6 | Metal Oxide Semiconductor Field Effect Transistor 文件：1.21626 Mbytes Page：17 Pages | INFINEON 英飞凌 | | |
N-Channel MOSFET Transistor • DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤0.45Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
Isc N-Channel MOSFET Transistor • FEATURES • With TO-220F package • Low input capacitance and gate charge • Low gate input resistance • Reduced switching and conduction losses • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applica | ISC 无锡固电 | | ||
600V CoolMOS E6 Power Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson*Qg and Eoss • Very high commutation ruggedness • Easy to | INFINEON 英飞凌 | | ||
Metal Oxide Semiconductor Field Effect Transistor 文件：1.21626 Mbytes Page：17 Pages | INFINEON 英飞凌 | | ||
Material Content Data Sheet 文件：33.11 Kbytes Page：1 Pages | INFINEON 英飞凌 | |
IPD60R450E6产品属性
- 类型
描述
- 型号
IPD60R450E6
- 功能描述
MOSFET N-CH 650V 9.2A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
2019+ |
DPAK(TO-252) |
28944 |
||||
Infineon(英飞凌) |
23+ |
标准封装 |
7000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
INFINEON |
原厂封装 |
1000 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
Infineon/英飞凌 |
25+ |
TO-252-2(DPAK) |
25000 |
原装正品,假一赔十! |
|||
Infineon/英飞凌 |
21+ |
TO-252-2(DPAK) |
6820 |
只做原装,质量保证 |
|||
Infineon Technologies |
22+ |
TO2523 DPak (2 Leads + Tab) SC |
9000 |
原厂渠道,现货配单 |
|||
INFINEON |
24+ |
TO-252 |
8500 |
原厂原包原装公司现货,假一赔十,低价出售 |
|||
Infineon/英飞凌 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
|||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
|||
Infineon(英飞凌) |
23+ |
标准封装 |
7000 |
公司只做原装，可来电咨询 |
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IPD60R450E6规格书下载地址
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DdatasheetPDF页码索引
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