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IPD60R450E6价格
参考价格：￥4.4579
型号：IPD60R450E6 品牌：Infineon 备注：这里有IPD60R450E6多少钱，2025年最近7天走势，今日出价，今日竞价，IPD60R450E6批发/采购报价，IPD60R450E6行情走势销售排行榜，IPD60R450E6报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IPD60R450E6 | 600V CoolMOS E6 Power Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson*Qg and Eoss • Very high commutation ruggedness • Easy to | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 |  |   |
IPD60R450E6 | N-Channel MOSFET Transistor • DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤0.45Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
IPD60R450E6 | Metal Oxide Semiconductor Field Effect Transistor 文件：1.21626 Mbytes Page：17 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | |
N-Channel MOSFET Transistor • DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤0.45Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
Isc N-Channel MOSFET Transistor • FEATURES • With TO-220F package • Low input capacitance and gate charge • Low gate input resistance • Reduced switching and conduction losses • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applica | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
600V CoolMOS E6 Power Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson*Qg and Eoss • Very high commutation ruggedness • Easy to | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | | |
Metal Oxide Semiconductor Field Effect Transistor 文件：1.21626 Mbytes Page：17 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | | |
Material Content Data Sheet 文件：33.11 Kbytes Page：1 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | |
IPD60R450E6产品属性
- 类型
描述
- 型号
IPD60R450E6
- 功能描述
MOSFET N-CH 650V 9.2A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
24+ |
NA/ |
5650 |
原装现货,当天可交货,原型号开票 |
|||
INFINEON |
20+ |
DPAK(TO-252) |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
INFINEON/英飞凌 |
22+ |
SOT-252 |
100000 |
代理渠道/只做原装/可含税 |
|||
INFINEON/英飞凌 |
25+ |
TO252 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
Infineon(英飞凌) |
2511 |
标准封装 |
7000 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
INFINEON/英飞凌 |
24+ |
TO252 |
990000 |
明嘉莱只做原装正品现货 |
|||
INFINEON |
15+ |
TO-252 |
2400 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
infineon |
1822+ |
TO-252 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
Infineon(英飞凌) |
23+ |
标准封装 |
7000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
INFINEON |
25+ |
DPAK(TO-252) |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
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IPD60R450E6规格书下载地址
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DdatasheetPDF页码索引
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