IPD60R450E6价格

参考价格:¥4.4579

型号:IPD60R450E6 品牌:Infineon 备注:这里有IPD60R450E6多少钱,2025年最近7天走势,今日出价,今日竞价,IPD60R450E6批发/采购报价,IPD60R450E6行情走势销售排行榜,IPD60R450E6报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IPD60R450E6

600V CoolMOS E6 Power Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson*Qg and Eoss • Very high commutation ruggedness • Easy to

Infineon

英飞凌

IPD60R450E6

N-Channel MOSFET Transistor

• DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤0.45Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

IPD60R450E6

500V-900V CoolMOS™ N-Channel Power MOSFET

Infineon

英飞凌

IPD60R450E6

Metal Oxide Semiconductor Field Effect Transistor

文件:1.21626 Mbytes Page:17 Pages

Infineon

英飞凌

N-Channel MOSFET Transistor

• DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤0.45Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-220F package • Low input capacitance and gate charge • Low gate input resistance • Reduced switching and conduction losses • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applica

ISC

无锡固电

600V CoolMOS E6 Power Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson*Qg and Eoss • Very high commutation ruggedness • Easy to

Infineon

英飞凌

Metal Oxide Semiconductor Field Effect Transistor

文件:1.21626 Mbytes Page:17 Pages

Infineon

英飞凌

Material Content Data Sheet

文件:33.11 Kbytes Page:1 Pages

Infineon

英飞凌

IPD60R450E6产品属性

  • 类型

    描述

  • 型号

    IPD60R450E6

  • 功能描述

    MOSFET N-CH 650V 9.2A

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-9-22 14:03:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Infineon(英飞凌)
23+
标准封装
7000
原厂原装现货订货价格优势终端BOM表可配单提供样品
Infineon(英飞凌)
24+
TO-252
9555
支持大陆交货,美金交易。原装现货库存。
INFINEON
23+
TO-252
4900
原厂原装正品
INFINEON
24+
TO-252
8500
原厂原包原装公司现货,假一赔十,低价出售
INFINEON/英飞凌
24+
DPAK(TO-252)
60000
全新原装现货
INFINEON/英飞凌
24+
TO252
990000
明嘉莱只做原装正品现货
Infineon Technologies
21+
PG-TO252-3
2500
100%进口原装!长期供应!绝对优势价格(诚信经营)!
INFINEON/英飞凌
24+
NA/
5650
原装现货,当天可交货,原型号开票
Infineon/英飞凌
20+
DPAK(TO-252)
28800
终端可免费提供样品,欢迎咨询
Infineon(英飞凌)
2511
标准封装
7000
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价

IPD60R450E6数据表相关新闻