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IPD60R450E6价格
参考价格：￥4.4579
型号：IPD60R450E6 品牌：Infineon 备注：这里有IPD60R450E6多少钱，2024年最近7天走势，今日出价，今日竞价，IPD60R450E6批发/采购报价，IPD60R450E6行情走势销售排行榜，IPD60R450E6报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IPD60R450E6 | 600VCoolMOSE6PowerTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easyto | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  |   |
IPD60R450E6 | N-ChannelMOSFETTransistor •DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.45Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
IPD60R450E6 | MetalOxideSemiconductorFieldEffectTransistor 文件：1.21626 Mbytes Page：17 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
N-ChannelMOSFETTransistor •DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.45Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
IscN-ChannelMOSFETTransistor •FEATURES •WithTO-220Fpackage •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •Reducedswitchingandconductionlosses •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplica | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
600VCoolMOSE6PowerTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easyto | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
MetalOxideSemiconductorFieldEffectTransistor 文件：1.21626 Mbytes Page：17 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
MaterialContentDataSheet 文件：33.11 Kbytes Page：1 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
IPD60R450E6产品属性
- 类型
描述
- 型号
IPD60R450E6
- 功能描述
MOSFET N-CH 650V 9.2A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon Technologies |
21+ |
TO2523 DPak (2 Leads + Tab) SC |
13880 |
公司只售原装,支持实单 |
|||
23+ |
N/A |
46180 |
正品授权货源可靠 |
||||
INFINE0N |
23+ |
TO-252 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
INFINEON |
2022+ |
TO252 |
57550 |
||||
infineon/英飞凌 |
2021/2022+ |
NA |
7000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
INFINEON/英飞凌 |
23+ |
TO-252 |
12000 |
原装正品真实现货杜绝虚假 |
|||
INFINEON/英飞凌 |
23+ |
TO252 |
6000 |
只有原装正品,老板发话合适就出 |
|||
INFINEON/英飞凌 |
23+ |
TO252 |
11220 |
英飞凌优势原装IC,高效BOM配单。 |
|||
INFINEON/英飞凌 |
TO-252 |
198589 |
假一罚十原包原标签常备现货! |
||||
INFINEON |
23/22+ |
TO252 |
2000 |
全线可订货.含税开票 |
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IPD60R450E6规格书下载地址
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DdatasheetPDF页码索引
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