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IPD60R750E6价格
参考价格：￥3.3081
型号：IPD60R750E6 品牌：Infineon 备注：这里有IPD60R750E6多少钱，2025年最近7天走势，今日出价，今日竞价，IPD60R750E6批发/采购报价，IPD60R750E6行情走势销售排行榜，IPD60R750E6报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IPD60R750E6 | 600VCoolMOSE6PowerTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhighcommutationruggedness •Easyto | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 |  |   |
IPD60R750E6 | N-ChannelMOSFETTransistor •DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.75Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
IPD60R750E6 | MetalOxideSemiconductorFieldEffectTransistor 文件：1.1844 Mbytes Page：17 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | |
N-ChannelMOSFETTransistor •DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.75Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.75Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustde | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
600VCoolMOSE6PowerTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhighcommutationruggedness •Easyto | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | | |
IscN-ChannelMOSFETTransistor •FEATURES •WithTO-220FPackage •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.75Ω(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplicati | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
MetalOxideSemiconductorFieldEffectTransistor 文件：1.1844 Mbytes Page：17 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | |
IPD60R750E6产品属性
- 类型
描述
- 型号
IPD60R750E6
- 功能描述
MOSFET N-CH 650V 5.7A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINE0N |
23+ |
TO-252 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
INF |
23+24 |
TO-252 |
29840 |
主营MOS管,二极.三极管,肖特基二极管.功率三极管 |
|||
INFINEON/英飞凌 |
22+ |
TO-252 |
12245 |
现货,原厂原装假一罚十! |
|||
INFINEON |
原厂封装 |
1000 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
Infineon(英飞凌) |
24+ |
N/A |
9855 |
原装正品现货支持实单 |
|||
INFINEO |
24+ |
TO-252 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
INFINEON/英飞凌 |
23+ |
TO-252 |
30000 |
全新原装现货,价格优势 |
|||
INFINEON |
2021+ |
TO-252 |
9450 |
原装现货。 |
|||
INFINEON/英飞凌 |
24+ |
TO-252 |
300 |
只做原厂渠道 可追溯货源 |
|||
INFINEON/英飞凌 |
23+ |
TO-252 |
11220 |
英飞凌优势原装IC,高效BOM配单。 |
IPD60R750E6芯片相关品牌
IPD60R750E6规格书下载地址
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DdatasheetPDF页码索引
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