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IPD600N25N3价格
参考价格：￥6.7089
型号：IPD600N25N3G 品牌：INFINEON 备注：这里有IPD600N25N3多少钱，2025年最近7天走势，今日出价，今日竞价，IPD600N25N3批发/采购报价，IPD600N25N3行情走势销售排行榜，IPD600N25N3报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IPD600N25N3 | N-Channel MOSFET Transistor • DESCRITION • High frequency switching • FEATURES • Static drain-source on-resistance: RDS(on)≤60mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 |   | |
OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 • Id | Infineon 英飞凌 | | ||
OptiMOSTM3 Power-Transistor 文件：492.43 Kbytes Page：9 Pages | Infineon 英飞凌 | | ||
OptiMOSTM3 Power-Transistor 文件：492.43 Kbytes Page：9 Pages | Infineon 英飞凌 | | ||
N-Channel MOSFET Transistor • DESCRITION • High frequency switching • FEATURES • Static drain-source on-resistance: RDS(on)≤60mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 • Id | Infineon 英飞凌 | | ||
OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 • Id | Infineon 英飞凌 | | ||
OptiMOS3 Power-Transistor 文件：737.83 Kbytes Page：11 Pages | Infineon 英飞凌 | | ||
OptiMOS3 Power-Transistor 文件：737.83 Kbytes Page：11 Pages | Infineon 英飞凌 | |
IPD600N25N3产品属性
- 类型
描述
- 型号
IPD600N25N3
- 功能描述
MOSFET N-KANAL POWER MOS
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
22+ |
TO-252 |
60000 |
原装优质现货订货渠道商 |
|||
INFINEON |
25+ |
TO-252 |
918000 |
明嘉莱只做原装正品现货 |
|||
Infineon(英飞凌) |
24+ |
N/A |
14328 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
INFINEON |
25+23+ |
TO-252 |
34833 |
绝对原装正品全新进口深圳现货 |
|||
Infineon/英飞凌 |
21+ |
PG-TO252-3 |
6820 |
只做原装,质量保证 |
|||
INFINEON优势现货 |
24+ |
TO-252 |
8500 |
原厂原包原装公司现货,假一赔十,低价出售 |
|||
INFINEON/英飞凌 |
24+ |
TO-252 |
6288 |
只做原厂渠道 可追溯货源 |
|||
INFINEO |
21+ |
TO-252 |
12588 |
原装正品,自己库存 假一罚十 |
|||
INFINEON/英飞凌 |
24+ |
TO-252 |
9600 |
原装现货,优势供应,支持实单! |
|||
INFINEON/英飞凌 |
25+ |
原厂封装 |
10280 |
原厂授权一级代理,专注军工、汽车、医疗、工业、新能源、电力! |
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