650V CoolMOS E6 Power Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very high commutation ruggedness • Easy to

N-Channel MOSFET Transistor

• DESCRITION • Very high commutation ruggedness • FEATURES • Static drain-source on-resistance: RDS(on)≤0.38Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

500 V-950 V CoolMOS™ N 沟道功率 MOSFET

CoolMOS™ C6/E6系列将 Infineon 作为领先的SJ MOSFET供应商的经验与一流的创新相结合。这些器件提供了快速开关 SJ MOSFET 的所有优点，同时又不牺牲易用性。极低的开关和传导损耗使开关应用更加高效、紧凑、轻巧且散热性更好。600V CoolMOS ™ E6 可替代 600V CoolMOS ™ C3。650V CoolMOS ™ E6 可替代 650V CoolMOS ™ C3。 • 易于控制开关行为\n• 非常高的换向坚固性\n• 由于品质因数 (R DS(ON)*Q g) 和 E oss) 非常低，损耗也极低\n• 易于使用\n• 与 C3 相比，轻载效率更高\n• 凭借久经考验的 CoolMOS ™品质和高体二极管坚固性，实现了卓越的可靠性\n• 与前几代 CoolMOS ™相比，性价比更高\n• 更高效、更紧凑、更轻便、更散热;

Metal Oxide Semiconductor Field Effect Transistor

文件：1.97976 Mbytes Page：17 Pages

Metal Oxide Semiconductor Field Effect Transistor

文件：1.97976 Mbytes Page：17 Pages

650V CoolMOS E6 Power Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very high commutation ruggedness • Easy to

650V CoolMOS E6 Power Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very high commutation ruggedness • Easy to

Metal Oxide Semiconductor Field Effect Transistor

文件：1.97976 Mbytes Page：17 Pages

Metal Oxide Semiconductor Field Effect Transistor

文件：1.97976 Mbytes Page：17 Pages