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IPD65R380E6价格
参考价格：￥5.2682
型号：IPD65R380E6 品牌：Infineon 备注：这里有IPD65R380E6多少钱，2025年最近7天走势，今日出价，今日竞价，IPD65R380E6批发/采购报价，IPD65R380E6行情走势销售排行榜，IPD65R380E6报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IPD65R380E6 | 650V CoolMOS E6 Power Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very high commutation ruggedness • Easy to | Infineon 英飞凌 |   | |
IPD65R380E6 | N-Channel MOSFET Transistor • DESCRITION • Very high commutation ruggedness • FEATURES • Static drain-source on-resistance: RDS(on)≤0.38Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | |
IPD65R380E6 | Metal Oxide Semiconductor Field Effect Transistor 文件：1.97976 Mbytes Page：17 Pages | Infineon 英飞凌 | | |
IPD65R380E6 | 500 V-950 V CoolMOS™ N 沟道功率 MOSFET | Infineon 英飞凌 | | |
Metal Oxide Semiconductor Field Effect Transistor 文件：1.97976 Mbytes Page：17 Pages | Infineon 英飞凌 | | ||
N-Channel MOSFET Transistor • DESCRITION • Very high commutation ruggedness • FEATURES • Static drain-source on-resistance: RDS(on)≤0.38Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
N-Channel MOSFET Transistor • DESCRIPTION • Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.38Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor • FEATURES • With TO-220F packaging • High speed switching • Very high commutation ruggedness • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operationz • APPLICATIONS • Switching applications | ISC 无锡固电 | | ||
650V CoolMOS E6 Power Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very high commutation ruggedness • Easy to | Infineon 英飞凌 | | ||
Metal Oxide Semiconductor Field Effect Transistor 文件：1.97976 Mbytes Page：17 Pages | Infineon 英飞凌 | |
IPD65R380E6产品属性
- 类型
描述
- 型号
IPD65R380E6
- 功能描述
MOSFET 650V CoolMOS E6 Power Transistor
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
24+ |
NA/ |
6979 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
INFINEO |
24+ |
TO-220 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
INFINEON/英飞凌 |
25+ |
TO-252 |
32360 |
INFINEON/英飞凌全新特价IPD65R380E6即刻询购立享优惠#长期有货 |
|||
INFINEON/英飞凌 |
22+ |
TO-252 |
100000 |
代理渠道/只做原装/可含税 |
|||
INFINEON/英飞凌 |
25+ |
TO252 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
INFINEON/英飞凌 |
24+ |
ROHS |
990000 |
明嘉莱只做原装正品现货 |
|||
INFINEON |
23+ |
2305 |
原装正品现货,德为本,正为先,通天下! |
||||
INFINEON |
1140+ |
TO252 |
40 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
INFINOEN |
24+ |
TO252-3 |
90000 |
一级代理进口原装现货、假一罚十价格合理 |
|||
Infineon(英飞凌) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
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DdatasheetPDF页码索引
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