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IPD65R380E6价格
参考价格：￥5.2682
型号：IPD65R380E6 品牌：Infineon 备注：这里有IPD65R380E6多少钱，2024年最近7天走势，今日出价，今日竞价，IPD65R380E6批发/采购报价，IPD65R380E6行情走势销售排行榜，IPD65R380E6报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IPD65R380E6 | 650VCoolMOSE6PowerTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhighcommutationruggedness •Easyto | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  |   |
IPD65R380E6 | N-ChannelMOSFETTransistor •DESCRITION •Veryhighcommutationruggedness •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.38Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
IPD65R380E6 | MetalOxideSemiconductorFieldEffectTransistor 文件：1.97976 Mbytes Page：17 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
MetalOxideSemiconductorFieldEffectTransistor 文件：1.97976 Mbytes Page：17 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
N-ChannelMOSFETTransistor •DESCRITION •Veryhighcommutationruggedness •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.38Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingSJMOSFETwhilenot sacrificingeaseofuse •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.38Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
iscN-ChannelMOSFETTransistor •FEATURES •WithTO-220Fpackaging •Highspeedswitching •Veryhighcommutationruggedness •Easytouse •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperationz •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
650VCoolMOSE6PowerTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhighcommutationruggedness •Easyto | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
MetalOxideSemiconductorFieldEffectTransistor 文件：1.97976 Mbytes Page：17 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
IPD65R380E6产品属性
- 类型
描述
- 型号
IPD65R380E6
- 功能描述
MOSFET 650V CoolMOS E6 Power Transistor
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINOEN |
24+ |
TO252-3 |
90000 |
一级代理进口原装现货、假一罚十价格合理 |
|||
INFINOEN |
1822+ |
TO252 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
INFINEON |
20+ |
DPAK(TO-252) |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
INFINEON/英飞凌 |
TO252 |
7906200 |
|||||
INFINEON |
20+ |
TO-252 |
65300 |
一级代理/放心购买! |
|||
INFINEON/英飞凌 |
21+ |
TO-252 |
6000 |
原装正品 |
|||
INFINEON/英飞凌 |
23+ |
DPAK(TO-252) |
21000 |
公司只做原装正品 |
|||
INFINOEN |
23+ |
TO-252 |
30000 |
代理全新原装现货,价格优势 |
|||
INFINEON/英飞凌 |
19+ |
TO-252 |
4800 |
只做原装只有原装可开增值税票 |
|||
Infineon/英飞凌 |
21+ |
PG-TO252-3 |
8800 |
公司只作原装正品 |
IPD65R380E6芯片相关品牌
IPD65R380E6规格书下载地址
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DdatasheetPDF页码索引
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