CoolMOS Power Transistor

CoolMOS® Power Transistor Features • Worldwide best Rds,on in TO252 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified for industrial grade applications according to JEDEC1) • Pb-free lead plating; RoHS compliant; available in Halogen free mold co

N-Channel MOSFET Transistor

• DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤0.385Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

600V CoolMOS™ CP Power Transistor

Ultra low gate charge Extreme dv/dt rated High peak current capability Fully qualified according JEDEC for industrial applications Pb-free lead plating; RoHS compliant, available in Halogen free mold compound

600V CoolMOS??CP Power Transistor

文件：595.98 Kbytes Page：11 Pages

CoolMOS Power Transistor

文件：308.12 Kbytes Page：10 Pages

CoolMOS Power Transistor

文件：308.12 Kbytes Page：10 Pages

600V CoolMOS??CP Power Transistor

文件：595.98 Kbytes Page：11 Pages

N-Channel MOSFET Transistor

• DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤0.385Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.385Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

CoolMOS Power Transistor

Features • Lowest figure-of-merit Ron x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified for industrial grade applications according to JEDEC1) • Pb-free lead plating; RoHS compliant; Halogen free mold compound CoolMOS CP is designed for: • Hard s

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-220F package • Low input capacitance and gate charge • Low gate input resistance • Reduced switching and conduction losses • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applica

CoolMos Power Transistor

文件：618.31 Kbytes Page：10 Pages