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IPD60R600E6价格
参考价格：￥3.3637
型号：IPD60R600E6 品牌：Infineon 备注：这里有IPD60R600E6多少钱，2025年最近7天走势，今日出价，今日竞价，IPD60R600E6批发/采购报价，IPD60R600E6行情走势销售排行榜，IPD60R600E6报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IPD60R600E6 | 600VCoolMOSE6PowerTransistor Description CoolMOSisarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOSE6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theoffereddevi | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 |  |   |
IPD60R600E6 | N-ChannelMOSFETTransistor •DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.6Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
IPD60R600E6 | MetalOxideSemiconductorFieldEffectTransistor 文件：1.22433 Mbytes Page：17 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | |
N-ChannelMOSFETTransistor •DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.6Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
600VCoolMOSE6PowerTransistor Description CoolMOSisarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOSE6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theoffereddevi | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | | |
IscN-ChannelMOSFETTransistor •FEATURES •WithTO-220FPackage •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplicatio | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
MetalOxideSemiconductorFieldEffectTransistor 文件：1.22433 Mbytes Page：17 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | |
IPD60R600E6产品属性
- 类型
描述
- 型号
IPD60R600E6
- 功能描述
MOSFET N-CH 650V 7.3A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
24+ |
NA/ |
1540 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
Infineon/英飞凌 |
21+ |
PG-TO252-3 |
6820 |
只做原装,质量保证 |
|||
INFINEON/英飞凌 |
23+ |
TO-252 |
30000 |
全新原装现货,价格优势 |
|||
Infineon/英飞凌 |
24+ |
PG-TO252-3 |
25000 |
原装正品,假一赔十! |
|||
INFINEON |
1836+ |
TO252 |
9852 |
只做原装正品现货!或订货假一赔十! |
|||
INFINEON |
原厂封装 |
1000 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
Infineon/英飞凌 |
24+ |
PG-TO252-3 |
6000 |
全新原装深圳仓库现货有单必成 |
|||
INFINEON/英飞凌 |
24+ |
SOT-252 |
16873 |
原装进口假一罚十 |
|||
Infineon(英飞凌) |
23+ |
NA |
7000 |
工厂现货!原装正品! |
|||
INF |
25+23+ |
TO-252 |
28363 |
绝对原装正品全新进口深圳现货 |
IPD60R600E6芯片相关品牌
IPD60R600E6规格书下载地址
IPD60R600E6参数引脚图相关
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DdatasheetPDF页码索引
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