N-Channel MOSFET Transistor

• DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤0.225Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

650V CoolMOS??C7 Power Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Increased MOSFET dv/dt ruggedness • Increased efficiency due to best in class FOM RDS(on) *Eoss and RDS(o

500V-900V CoolMOS™ N-Channel Power MOSFET

N-Channel MOSFET Transistor

• DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤0.225Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

N-Channel MOSFET Transistor

• DESCRIPTION • Provide all benefits of a fast switching super junction MOSFET offering better efficiency,reduced gate charge,easy implementation and outstanding reliability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.225Ω • Enhancement mode • Fast Switching Speed

650V CoolMOS??C7 Power Transistor

Description CoolMOS™ is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies Features • Increased MOSFET dv/dt ruggedness • Better efficiency due to best in class FOM RDS(on)*Eoss and RDS(on)*Qg

Metal Oxide Semiconductor Field Effect Transistor

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Isc N-Channel MOSFET Transistor

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