isc N-Channel MOSFET Transistor

• FEATURES • With TO-252(DPAK) packaging • With low gate drive requirements • Very high commutation ruggedness • Extremely high frequency operation • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching app

Metal Oxide Semiconductor Field Effect Transistor

文件：1.00416 Mbytes Page：18 Pages

500 V-950 V CoolMOS™ N 沟道功率 MOSFET

600V CoolMOS E6 Power Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ E6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resulting

600V CoolMOS E6 Power Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ E6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resulting

Metal Oxide Semiconductor Field Effect Transistor

文件：1.00416 Mbytes Page：18 Pages