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IPD60R600P6价格
参考价格：￥3.1745
型号：IPD60R600P6 品牌：Infineon 备注：这里有IPD60R600P6多少钱，2025年最近7天走势，今日出价，今日竞价，IPD60R600P6批发/采购报价，IPD60R600P6行情走势销售排行榜，IPD60R600P6报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IPD60R600P6 | N-ChannelMOSFETTransistor •DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.6Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  |   |
IPD60R600P6 | MetalOxideSemiconductorFieldEffectTransistor 600VCoolMOS™P6PowerTransistor Applications PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom andUPS. | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 |  | |
N-ChannelMOSFETTransistor •DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.6Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.6Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdev | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
MetalOxideSemiconductorFieldEffectTransistor 600VCoolMOS™P6PowerTransistor Applications PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom andUPS. | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | | |
IscN-ChannelMOSFETTransistor •FEATURES •WithTO-220FPackage •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplicatio | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
MetalOxideSemiconductorFieldEffectTransistor 文件：2.85536 Mbytes Page：19 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | |
IPD60R600P6产品属性
- 类型
描述
- 型号
IPD60R600P6
- 功能描述
MOSFET 600V CoolMOS P6 MOSFET 600 Rds
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
23+ |
IPD60R600P6 |
19850 |
原装正品,假一赔十 |
|||
Infineon/英飞凌 |
1948+ |
TO252 |
6852 |
只做原装正品现货!或订货假一赔十! |
|||
INFINEON |
16+ |
TO252 |
27194 |
原盘环保/2500 |
|||
Infineon/英飞凌 |
24+ |
PG-TO252-3 |
25000 |
原装正品,假一赔十! |
|||
INFINEON/英飞凌 |
23+ |
TO-252 |
30000 |
代理全新原装现货,价格优势 |
|||
Infineon/英飞凌 |
23+ |
PG-TO252-3 |
25630 |
原装正品 |
|||
INFINEON |
25+23+ |
TO-252 |
20614 |
绝对原装正品全新进口深圳现货 |
|||
Infineon/英飞凌 |
21+ |
PG-TO252-3 |
6820 |
只做原装,质量保证 |
|||
INFINEON/英飞凌 |
24+ |
TO252 |
280 |
只做原厂渠道 可追溯货源 |
|||
INFINEON |
24+ |
TO-252 |
8500 |
原厂原包原装公司现货,假一赔十,低价出售 |
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IPD60R600P6规格书下载地址
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