位置：首页 > IC中文资料第11532页 > IPD65R420CFD
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IPD65R420CFD | 650V CoolMOS C6 CFD Power Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdso | Infineon 英飞凌 |   | |
IPD65R420CFD | Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdso | Infineon 英飞凌 | | |
IPD65R420CFD | 500 V-950 V CoolMOS™ N 沟道功率 MOSFET | Infineon 英飞凌 | | |
20V-650V汽车级MOSFET | Infineon 英飞凌 | | ||
Metal Oxide Semiconductor Field Effect Transistor 文件：1.31097 Mbytes Page：14 Pages | Infineon 英飞凌 | | ||
N-Channel MOSFET Transistor • DESCRIPTION • Provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.42Ω ·Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variation | ISC 无锡固电 | | ||
N-Channel MOSFET Transistor • DESCRITION • Fast Switching • FEATURES • Static drain-source on-resistance: RDS(on)≤420mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
650V CoolMOS C6 CFD Power Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdso | Infineon 英飞凌 | | ||
Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdso | Infineon 英飞凌 | | ||
11A竊?50V N-CHANNEL MOSFET 文件：461.65 Kbytes Page：6 Pages | KIA 可易亚半导体 | |
IPD65R420CFD产品属性
- 类型
描述
- 型号
IPD65R420CFD
- 功能描述
MOSFET CoolMOS 650V 420mOhm CFD2 N-Chan MOSFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
24+ |
NA/ |
181 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
Infineon(英飞凌) |
24+ |
TO-252 |
9555 |
支持大陆交货,美金交易。原装现货库存。 |
|||
INFINEON |
24+ |
TO252 |
8500 |
原厂原包原装公司现货,假一赔十,低价出售 |
|||
INFINEON/英飞凌 |
24+ |
TO-252 |
60000 |
||||
INFINEON/英飞凌 |
20+ |
SOT-252 |
16300 |
终端可免费提供样品,欢迎咨询 |
|||
INFINE0N |
21+ |
PG-TO252-3 |
32568 |
100%进口原装!长期供应!绝对优势价格(诚信经营 |
|||
INFINEON |
25+ |
SOT252 |
3650 |
原厂原装,价格优势 |
|||
INFINEON/英飞凌 |
24+ |
TO-252 |
7850 |
只做原装正品现货或订货假一赔十! |
|||
Infineon(英飞凌) |
2511 |
标准封装 |
7000 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
INFINEON |
23+ |
TO-252 |
30000 |
代理全新原装现货,价格优势 |
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DdatasheetPDF页码索引
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