位置：首页 > IC中文资料第11532页 > IPD65R420CFD
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IPD65R420CFD | 650VCoolMOSC6CFDPowerTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 |  |   |
IPD65R420CFD | MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | |
MetalOxideSemiconductorFieldEffectTransistor 文件：1.31097 Mbytes Page：14 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | | |
N-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.42Ω·Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
N-ChannelMOSFETTransistor •DESCRITION •FastSwitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤420mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
650VCoolMOSC6CFDPowerTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | | |
MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | | |
11A竊?50VN-CHANNELMOSFET 文件：461.65 Kbytes Page：6 Pages | KIAKIA Semiconductor Technology 可易亚半导体广东可易亚半导体科技有限公司 |  | |
IPD65R420CFD产品属性
- 类型
描述
- 型号
IPD65R420CFD
- 功能描述
MOSFET CoolMOS 650V 420mOhm CFD2 N-Chan MOSFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
24+ |
NA/ |
181 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
INFINEON/英飞凌 |
25+ |
TO252 |
32360 |
INFINEON/英飞凌全新特价IPD65R420CFD即刻询购立享优惠#长期有货 |
|||
INFINEO |
24+ |
TO252 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
Infineon |
23+ |
NA |
6800 |
原装正品,力挺实单 |
|||
INFINEON/英飞凌 |
24+ |
TO-252 |
7850 |
只做原装正品现货或订货假一赔十! |
|||
Infineon |
23+ |
PG-TO252-3 |
15500 |
英飞凌优势渠道全系列在售 |
|||
INFINEON |
23+ |
TO-252 |
30000 |
代理全新原装现货,价格优势 |
|||
INFINEON |
23+ |
TO-252 |
8058 |
原厂原装正品 |
|||
Infineon(英飞凌) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
INFINEON |
25+23+ |
TO252 |
72335 |
绝对原装正品现货,全新深圳原装进口现货 |
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DdatasheetPDF页码索引
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