位置：首页 > IC中文资料第11532页 > IPD65R420CFD
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IPD65R420CFD | 650V CoolMOS C6 CFD Power Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdso | Infineon 英飞凌 |   | |
IPD65R420CFD | Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdso | Infineon 英飞凌 | | |
IPD65R420CFD | 500 V-950 V CoolMOS™ N 沟道功率 MOSFET | Infineon 英飞凌 | | |
650V、N 沟道、最大 420 mΩ、汽车 MOSFET、DPAK、CoolMOS ™ CFDA | Infineon 英飞凌 | | ||
Metal Oxide Semiconductor Field Effect Transistor 文件：1.31097 Mbytes Page：14 Pages | Infineon 英飞凌 | | ||
N-Channel MOSFET Transistor • DESCRIPTION • Provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.42Ω ·Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variation | ISC 无锡固电 | | ||
N-Channel MOSFET Transistor • DESCRITION • Fast Switching • FEATURES • Static drain-source on-resistance: RDS(on)≤420mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
650V CoolMOS C6 CFD Power Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdso | Infineon 英飞凌 | | ||
Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdso | Infineon 英飞凌 | | ||
11A竊?50V N-CHANNEL MOSFET 文件：461.65 Kbytes Page：6 Pages | KIA 可易亚半导体 | |
IPD65R420CFD产品属性
- 类型
描述
- 型号
IPD65R420CFD
- 功能描述
MOSFET CoolMOS 650V 420mOhm CFD2 N-Chan MOSFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
24+ |
TO-252 |
9555 |
支持大陆交货,美金交易。原装现货库存。 |
|||
INFINEO |
24+ |
TO252 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
INFINEON |
24+ |
TO252 |
8500 |
原厂原包原装公司现货,假一赔十,低价出售 |
|||
Infineon(英飞凌) |
23+ |
标准封装 |
7000 |
公司只做原装，可来电咨询 |
|||
Infineon(英飞凌) |
2447 |
PG-TO252-3 |
115000 |
2500个/圆盘一级代理专营品牌!原装正品,优势现货, |
|||
Infineon(英飞凌) |
25+ |
TO-252-2 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
Infineon(英飞凌) |
24+ |
N/A |
9855 |
原装正品现货支持实单 |
|||
INFINEON/英飞凌 |
21+ |
NA |
2500 |
只做原装,一定有货,不止网上数量,量多可订货! |
|||
INFINEON/英飞凌 |
25+ |
TO252 |
32360 |
INFINEON/英飞凌全新特价IPD65R420CFD即刻询购立享优惠#长期有货 |
|||
Infineon/英飞凌 |
19+ |
TO-252 |
363 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
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DdatasheetPDF页码索引
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