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IPD60R1K4C6价格
参考价格：￥2.0496
型号：IPD60R1K4C6 品牌：INFINEON 备注：这里有IPD60R1K4C6多少钱，2025年最近7天走势，今日出价，今日竞价，IPD60R1K4C6批发/采购报价，IPD60R1K4C6行情走势销售排行榜，IPD60R1K4C6报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IPD60R1K4C6 | N-ChannelMOSFETTransistor •DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤1.4Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  |   |
IPD60R1K4C6 | 600VCoolMOSC6PowerTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhighcommutationruggedness •Easyto | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 |  | |
IPD60R1K4C6 | MaterialContentDataSheet 文件：33.25 Kbytes Page：1 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | |
600VCoolMOSC6PowerTransistorIPD60R1K4C6 Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhighcommutationruggedness •Easyto | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | | |
MaterialContentDataSheet 文件：33.25 Kbytes Page：1 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | | |
N-ChannelMOSFETTransistor •DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤1.4Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingSJMOSFETwhilenot sacrificingeaseofuse •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤1.4Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice p | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | |
IPD60R1K4C6产品属性
- 类型
描述
- 型号
IPD60R1K4C6
- 功能描述
MOSFET N-CH 650V 3.2A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
24+ |
NA/ |
3720 |
原装现货,当天可交货,原型号开票 |
|||
INFINEON/英飞凌 |
25+ |
TO-252 |
32360 |
INFINEON/英飞凌全新特价IPD60R1K4C6即刻询购立享优惠#长期有货 |
|||
INFINEO |
24+ |
TO-252 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
Infineon/英飞凌 |
23+ |
TO-252 |
12700 |
买原装认准中赛美 |
|||
INFINEON/英飞凌 |
22+ |
SOT-252 |
100000 |
代理渠道/只做原装/可含税 |
|||
INFINEON/英飞凌 |
25+ |
TO252 |
64548 |
百分百原装现货 实单必成 |
|||
Infineon/英飞凌 |
24+ |
TO-252 |
6000 |
全新原装深圳仓库现货有单必成 |
|||
INFINEON |
2430+ |
TO252 |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
Infineon |
23+ |
PG-TO252-3 |
15500 |
英飞凌优势渠道全系列在售 |
|||
Infineon/英飞凌 |
21+ |
TO-252 |
6820 |
只做原装,质量保证 |
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深圳市瑞智芯科技有限公司 联系人：彭先生 QQ：2851196982 直线：0755-82991809 手机：13787628849 邮箱：pc@szruizhixin.com 地址：深圳市福田区中航路42号中航北苑大厦A座6A2 型号：IPD60R170CFD7 类别分立半导体产品晶体管-FET，MOSFET-单个 制造商InfineonTechnologies 包装：2500 封装：TO-252-3
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https://hch01.114ic.com/
2020-11-13
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