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IPD60R1K4C6价格
参考价格：￥2.0496
型号：IPD60R1K4C6 品牌：INFINEON 备注：这里有IPD60R1K4C6多少钱，2026年最近7天走势，今日出价，今日竞价，IPD60R1K4C6批发/采购报价，IPD60R1K4C6行情走势销售排行榜，IPD60R1K4C6报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IPD60R1K4C6 | N-Channel MOSFET Transistor • DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤1.4Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 |   | |
IPD60R1K4C6 | 600V CoolMOS C6 Power Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very high commutation ruggedness • Easy to | INFINEON 英飞凌 | | |
IPD60R1K4C6 | 500V-900V CoolMOS™ N-Channel Power MOSFET | INFINEON 英飞凌 | | |
IPD60R1K4C6 | Material Content Data Sheet 文件：33.25 Kbytes Page：1 Pages | INFINEON 英飞凌 | | |
600V CoolMOS C6 Power Transistor IPD60R1K4C6 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very high commutation ruggedness • Easy to | INFINEON 英飞凌 | | ||
Material Content Data Sheet 文件：33.25 Kbytes Page：1 Pages | INFINEON 英飞凌 | | ||
N-Channel MOSFET Transistor • DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤1.4Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
N-Channel MOSFET Transistor • DESCRIPTION • Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use • FEATURES • Static drain-source on-resistance: RDS(on) ≤1.4Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device p | ISC 无锡固电 | |
IPD60R1K4C6产品属性
- 类型
描述
- 型号
IPD60R1K4C6
- 功能描述
MOSFET N-CH 650V 3.2A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
25+ |
TO-252-2 |
22412 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
INFINEON/英飞凌 |
2023+ |
TO-252 |
22173 |
原厂全新正品旗舰店优势现货 |
|||
INFINEON/英飞凌 |
22+ |
TO-252 |
100000 |
代理渠道/只做原装/可含税 |
|||
Infineon(英飞凌) |
25+ |
TO-252-2 |
22412 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
Infineon/英飞凌 |
21+ |
TO-252 |
6820 |
只做原装,质量保证 |
|||
INFINEON/英飞凌 |
24+ |
TO-252 |
22167 |
只做原装假一赔十 |
|||
INFINEON优势现货 |
11+ |
TO-252 |
60 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Infineon/英飞凌 |
25+ |
TO-252 |
30000 |
原装正品公司现货,假一赔十! |
|||
Infineon(英飞凌) |
23+ |
标准封装 |
7000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
INFINEON |
26+ |
TO-252 |
86720 |
全新原装正品价格最实惠 假一赔百 |
IPD60R1K4C6规格书下载地址
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深圳市瑞智芯科技有限公司 联系人：彭先生 QQ：2851196982 直线：0755-82991809 手机：13787628849 邮箱：pc@szruizhixin.com 地址：深圳市福田区中航路42号中航北苑大厦A座6A2 型号：IPD60R170CFD7 类别 分立半导体产品 晶体管 - FET，MOSFET - 单个 制造商 Infineon Technologies 包装：2500 封装：TO-252-3
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https://hch01.114ic.com/
2020-11-13
DdatasheetPDF页码索引
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