N-Channel 30V(D-S) Enhancement MOSFET

Application « Load/Power switch «Interfacing, logic switching «Battery management for ultra protable: «electronics

N-Channel Enhancement MOSFET

Application o Load switch « High Frequency Switching and Synchronous Rectification o Active Clamp in Intermediate « DC/DC Power Supplies

N-Channel Dual CoolTM Power Trench짰 SyncFETTM 30 V, 49 A, 1.9 m廓

Dual Cool™ packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance flexibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

DUAL COOL??PACKAGE POWERTRENCH짰 MOSFETs

Dual Cool™ packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance flexibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

N-Channel Dual CoolTM PowerTrench짰 SyncFETTM 30 V, 49 A, 2.6 m廓

Dual Cool™ packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance flexibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

DUAL COOL??PACKAGE POWERTRENCH짰 MOSFETs

Dual Cool™ packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance flexibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 49 A, 6.0

Dual Cool™ packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance flexibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

DUAL COOL??PACKAGE POWERTRENCH짰 MOSFETs

Dual Cool™ packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance flexibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

N-Channel Enhancement Mode MOSFET

Features + Advanced trench cell design + Low Thermal Resistance + Low Gate Charge

MOSFET – N-Channel, POWERTRENCH, Power Stage, Asymetric Dual

General Description This device includes two specialized N−Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET™ (Q2) have been designed to pro

PowerTrench Power Stage 30 V Asymmetric Dual N-Channel MOSFET

General Description This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide

PowerTrench Power Stage

General Description This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide

25V Asymmetric Dual N-Channel MOSFET

General Description This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide

N-Channel UltraFET Trench MOSFET 100V, 22A, 23mohm

General Description UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters. Features ■ Max rDS(on) = 23mΩ at VGS

P-Channel PowerTrench짰 MOSFET -30 V, -18 A, 20 m廓

General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers

N-Channel UltraFET Trench® MOSFET 60V, 22A, 11.5mΩ

Features Max rDS(on) = 11.5mΩ at VGS = 10V, ID = 10.6A Max rDS(on) = 16.5mΩ at VGS = 6V, ID = 8A Typ Qg = 32nC at VGS = 10V Low Miller Charge Optimized Efficiency at High Frequencies RoHS Compliant General Description UItraFET devices combine characteristics that enable benchmark e

Dual 5 A, 20 V Synchronous Step-Down

GENERAL DESCRIPTION The ADP2325 is a full featured, dual output, step-down dc-to-dc regulator based on a current mode architecture. The ADP2325 integrates two high-side power MOSFETs and two low-side drivers for the external N-channel MOSFETs. The two pulse-width modulation (PWM) channels can be

Dual 3 A, 20 V Synchronous Step-Down Regulator with Integrated High-Side MOSFET

GENERAL DESCRIPTION The ADP2323 is a full featured, dual output, step-down dc-to-dc regulator based on current-mode architecture. The ADP2323 integrates two high-side power MOSFETs and two low-side drivers for the external N-channel MOSFETs. The two pulse-width mod ulation (PWM) channels can be c

N-Channel PowerTrench짰 MOSFET 30 V, 60 A, 0.99 m廓

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge and extremely low rDS(on

DUAL COOL??PACKAGE POWERTRENCH짰 MOSFETs

Dual Cool™ packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance flexibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

N-Channel Dual CoolTM PowerTrench짰 MOSFET 30 V, 100 A, 0.99 m廓

Dual Cool™ packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance flexibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

N-Channel PowerTrench짰 MOSFET 30 V, 2.8 m廓

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast swi

N-Channel PowerTrench짰 SyncFET 30 V, 42 A, 2.4 m廓

General Description The FDMS7660AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of a

N-Channel PowerTrench짰 MOSFET 30 V, 3.8 m廓

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast swi

N-Channel PowerTrench짰 SyncFET 30 V, 42 A, 3 m廓

General Description The FDMS7670AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of a

N-Channel 30V(D-S) Enhancement MOSFET

Application « Load/Power switch «Interfacing, logic switching «Battery management for ultra protable: «electronics

N-Channel PowerTrench짰 MOSFET 30 V, 5.0 m廓

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast sw

N-Channel PowerTrench짰 SyncFET 30 V, 42 A, 4 m廓

General Description The FDMS7672AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit o

N-Channel PowerTrench� MOSFET 30 V, 5.5 m?

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switc

N-Channel PowerTrench짰 MOSFET 30 V, 6.9 m廓

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switc

N-Channel PowerTrench짰 MOSFET 30 V, 7.5 m廓

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast s

N-Channel PowerTrench짰 MOSFET 30 V, 8 m廓

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switc

N-Channel Enhancement MOSFET

Application o Load switch « High Frequency Switching and Synchronous Rectification o Active Clamp in Intermediate « DCIDC Power Supplies

DUAL COOL??PACKAGE POWERTRENCH짰 MOSFETs

Dual Cool™ packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance flexibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

DUAL COOL??PACKAGE POWERTRENCH짰 MOSFETs

Dual Cool™ packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance flexibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

N-Channel Dual CoolTM Power Trench짰 MOSFET 100 V, 60 A, 7.5 m廓

Dual Cool™ packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance flexibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

DUAL COOL??PACKAGE POWERTRENCH짰 MOSFETs

Dual Cool™ packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance flexibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage- : VDSS=100V(Min) ·Fast Switching Speed ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Primary DC-DC MOSFET ·Secondary Synchronous Rectifier ·Load Switch

N-Channel Enhancement MOSFET

Application i « Load switch « High Frequency Switching and Synchronous Rectification o Active Clamp in Intermediate « DC/DC Power Supplies

N-Channel Enhancement MOSFET

Application | « Load switch | « High Frequency Switching and Synchronous Rectification o Active Clamp in Intermediate « DC/DC Power Supplies |

DUAL COOL??PACKAGE POWERTRENCH짰 MOSFETs

Dual Cool™ packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance flexibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

N-Channel Enhancement MOSFET

Application « Load switch | « High Frequency Switching and ~~ Synchronous Rectification « Active Clamp in Intermediate ~~ o DC/DC Power Supplies

N-Channel Enhancement MOSFET

Application | « Load switch « High Frequency Switching and Synchronous Rectification o Active Clamp in Intermediate « DC/DC Power Supplies

N-Channel PowerTrench짰 MOSFET 80 V, 42 A, 3.9 m廓

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switch

DUAL COOL??PACKAGE POWERTRENCH짰 MOSFETs

Dual Cool™ packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance flexibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

N-Channel Dual CoolTM Power Trench짰 MOSFET 80 V, 60 A, 3.1 m廓

Dual Cool™ packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance flexibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

N-Channel Enhancement Mode MOSFET

Features + Advanced trench cell design + Low Thermal Resistance * Low Gate Charge

N-Channel Enhancement Mode MOSFET

Features + Advanced trench cell design + Low Thermal Resistance * Low Gate Charge

N-Channel Enhancement Mode MOSFET

Features + Advanced trench cell design + Low Thermal Resistance * Low Gate Charge

N-Channel Enhancement Mode MOSFET

Features | + Advanced trench cell design «Low Thermal Resistance ~~ + Low Gate Charge

N-Channel Dual CoolTM Power Trench짰 MOSFET 60 V, 108 A, 2.3 m廓

Dual Cool™ packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance flexibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

DUAL COOL??PACKAGE POWERTRENCH짰 MOSFETs

Dual Cool™ packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance flexibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

类型：N沟道 漏源电压(Vdss)：100V 连续漏极电流(Id)：12.4A 功率(Pd)：2.5W 导通电阻(RDS(on)@Vgs,Id)：8mΩ@10V,13A N 沟道，PowerTrench MOSFET，100V，60A，8mΩ 此 N 沟道 MOSFET 是使用先进的 PowerTrench 工艺生产的，特别适用于最大程度降低导通电阻，同时保持卓越的

文件：561.648 Kbytes Page：10 Pages

PowerTrench Power Clip 25 V Asymmetric Dual N?묬hannel MOSFET

文件：451.77 Kbytes Page：13 Pages

包装：托盘 描述：FXMAV SD 1TB QLC COMMERCIAL GRAD 存储卡，模块 存储卡

包装：托盘 描述：SD 2GB 存储卡，模块 存储卡

N-Channel Shielded Gate PowerTrench짰 MOSFET

文件：1.45846 Mbytes Page：7 Pages

N 沟道，屏蔽门极，PowerTrench® MOSFET，80 V，147 A，3.1 mΩ

N-Channel Shielded Gate PowerTrench MOSFET

文件：1.19227 Mbytes Page：9 Pages

N-Channel Shielded Gate POWERTRENCH MOSFET

文件：514.03 Kbytes Page：8 Pages