General Description

The FDMS7672AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest

rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.

Features

Max rDS(on)= 4.0 mΩ at VGS= 10 V, ID= 18 A

Max rDS(on)= 4.5 mΩ at VGS= 7 V, ID= 16 A

Advanced Package and Silicon combination for low rDS(on) and high efficiency

SyncFET Schottky Body Diode

MSL1 robust package design

100 UIL tested

RoHS Compliant