类型：N沟道 漏源电压(Vdss)：100V 连续漏极电流(Id)：12.4A 功率(Pd)：2.5W 导通电阻(RDS(on)@Vgs,Id)：8mΩ@10V,13A N 沟道，PowerTrench MOSFET，100V，60A，8mΩ 此 N 沟道 MOSFET 是使用先进的 PowerTrench 工艺生产的，特别适用于最大程度降低导通电阻，同时保持卓越的

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N-Channel PowerTrench짰 MOSFET 100 V, 49 A, 8 m?

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N-Channel PowerTrench짰 MOSFET

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N 沟道，PowerTrench® MOSFET，100V，60A，8mΩ

N-Channel Dual CoolTM Power Trench짰 MOSFET 100 V, 60 A, 7.5 m廓

Dual Cool™ packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance flexibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage- : VDSS=100V(Min) ·Fast Switching Speed ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Primary DC-DC MOSFET ·Secondary Synchronous Rectifier ·Load Switch

DUAL COOL??PACKAGE POWERTRENCH짰 MOSFETs

Dual Cool™ packaging technology, provides both bottom- and top-side cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance flexibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predece

N-Channel PowerTrench짰 MOSFET 100 V, 60 A, 8 m廓

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N-Channel PowerTrench짰 MOSFET 100 V, 60 A, 8 m廓

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N 沟道 PowerTrench® MOSFET 100V，60A，8mΩ

N 沟道，双 CoolTM 56 PowerTrench® MOSFET，100V，60A，7.5mΩ