General Description

This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power efficiency.

Features

Q1: N-Channel

■ Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A

■ Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A

Q2: N-Channel

■ Max rDS(on) = 1.9 mΩ at VGS = 10 V, ID = 27 A

■ Max rDS(on) = 2.8 mΩ at VGS = 4.5 V, ID = 23 A

■ Low inductance packaging shortens rise/fall times, resulting in lower switching losses

■ MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing

■ RoHS Compliant

Applications

■ Computing

■ Communications

■ General Purpose Point of Load

■ Notebook VCORE

■ Sever